| Proton radiation effects in 4H-SiC diodes and MOS capacitors Z Luo, T Chen, AC Ahyi, AK Sutton, BM Haugerud, JD Cressler, ... IEEE transactions on nuclear science 51 (6), 3748-3752, 2004 | 61 | 2004 |
| On the high-temperature (to 300/spl deg/C) characteristics of SiGe HBTs T Chen, WML Kuo, E Zhao, Q Liang, Z Jin, JD Cressler, AJ Joseph IEEE Transactions on Electron Devices 51 (11), 1825-1832, 2004 | 52 | 2004 |
| CMOS reliability issues for emerging cryogenic Lunar electronics applications T Chen, C Zhu, L Najafizadeh, B Jun, A Ahmed, R Diestelhorst, G Espinel, ... Solid-state electronics 50 (6), 959-963, 2006 | 48 | 2006 |
| The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors T Chen, Z Luo, JD Cressler, TF Isaacs-Smith, JR Williams, G Chung, ... Solid-State Electronics 46 (12), 2231-2235, 2002 | 45 | 2002 |
| Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs C Zhu, Q Liang, RA Al-Huq, JD Cressler, Y Lu, T Chen, AJ Joseph, G Niu IEEE Transactions on Device and Materials Reliability 5 (1), 142-149, 2005 | 41 | 2005 |
| Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodes Z Luo, T Chen, JD Cressler, DC Sheridan, JR Williams, RA Reed, ... IEEE transactions on nuclear science 50 (6), 1821-1826, 2003 | 40 | 2003 |
| 22nm FD-SOI technology with back-biasing capability offers excellent performance for enabling efficient, ultra-low power analog and RF/millimeter-wave designs SN Ong, LHK Chan, KWJ Chew, CK Lim, WL Oo, A Bellaouar, C Zhang, ... 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 323-326, 2019 | 38 | 2019 |
| Excellent 22FDX hot-carrier reliability for PA applications T Chen, C Zhang, W Arfaoui, A Bellaouar, S Embabi, G Bossu, ... 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 27-30, 2019 | 34 | 2019 |
| A 7-bit, 18 GHz SiGe HBT comparator for medium resolution A/D conversion X Li, WML Kuo, Y Lu, R Krithivasan, T Chen, JD Cressler, AJ Joseph Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005 | 23 | 2005 |
| X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI M Bellini, B Jun, T Chen, JD Cressler, PW Marshall, D Chen, RD Schrimpf, ... IEEE transactions on nuclear science 53 (6), 3182-3186, 2006 | 19 | 2006 |
| Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI T Chen, AK Sutton, M Bellini, BM Haugerud, JP Comeau, Q Liang, ... IEEE transactions on nuclear science 52 (6), 2353-2357, 2005 | 18 | 2005 |
| 22FDX® fMAX Optimization through Parasitics Reduction and GM Boost Z Zhao, S Lehmann, L Lucci, Y Andee, A Divay, L Pirro, T Herrmann, ... ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 14 | 2019 |
| Substrate bias effects in vertical SiGe HBTs fabricated on CMOS-compatible thin film SOI T Chen, M Bellini, E Zhao, JP Comeau, AK Sutton, CM Grens, JD Cressler, ... Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005 | 14 | 2005 |
| Footprint design optimization in SiGe BiCMOS SOI technology T Chen, J Babcock, Y Nguyen, W Greig, N Lavrovskaya, T Thibeault, ... 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 208-211, 2008 | 13 | 2008 |
| 22nm fully-depleted SOI high frequency noise modeling up to 90GHz enabling ultra low noise millimetre-wave LNA design LHK Chan, SN Ong, WL Oo, KWJ Chew, C Zhang, A Bellaouar, WH Chow, ... 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 31-34, 2019 | 12 | 2019 |
| Safe operating area from self-heating, impact ionization, and hot carrier reliability for a SiGe HBT on SOI J Kim, A Sadovnikov, T Chen, J Babcock 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 230-233, 2007 | 12 | 2007 |
| A novel HCI reliability model for RF/mmWave applications in FDSOI technology W Arfaoui, G Bossu, A Muhlhoff, D Lipp, R Manuwald, T Chen, T Nigam, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 11 | 2020 |
| CMOS device reliability for emerging cryogenic space electronics applications T Chen, L Najafizadeh, C Zhu, A Ahmed, R Diestelhorst, G Espinel, ... 2005 International Semiconductor Device Research Symposium, 328-329, 2005 | 10 | 2005 |
| The effects of proton irradiation on the operating voltage constraints of SiGe HBTs CM Grens, BM Haugerud, AK Sutton, T Chen, JD Cressler, PW Marshall, ... IEEE transactions on nuclear science 52 (6), 2403-2407, 2005 | 9 | 2005 |
| Demonstration and modelling of excellent RF switch performance of 22nm FD-SOI technology for millimeter-wave applications S Yadav, A Bellaouar, JS Wong, T Chen, S Sekine, C Schwan, MS Chin, ... ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 8 | 2019 |
