Dr. Arnulf Leuther
Dr. Arnulf Leuther
IAF Fraunhofer
Zweryfikowany adres z iaf.fraunhofer.de - Strona główna
Tytuł
Cytowane przez
Cytowane przez
Rok
Wireless sub-THz communication system with high data rate
S Koenig, D Lopez-Diaz, J Antes, F Boes, R Henneberger, A Leuther, ...
Nature photonics 7 (12), 977-981, 2013
7912013
All active MMIC-based wireless communication at 220 GHz
I Kallfass, J Antes, T Schneider, F Kurz, D Lopez-Diaz, S Diebold, ...
IEEE Transactions on Terahertz Science and Technology 1 (2), 477-487, 2011
1912011
50 nm MHEMT Technology for G-and H-Band MMICs
A Leuther, A Tessmann, M Dammann, C Schworer, M Schlechtweg, ...
2007 IEEE 19th International Conference on Indium Phosphide & Related …, 2007
972007
Towards MMIC-based 300GHz indoor wireless communication systems
I Kallfass, I Dan, S Rey, P Harati, J Antes, A Tessmann, S Wagner, M Kuri, ...
IEICE transactions on electronics 98 (12), 1081-1090, 2015
902015
35 nm metamorphic HEMT MMIC technology
A Leuther, A Tessmann, H Massler, R Losch, M Schlechtweg, M Mikulla, ...
2008 20th International Conference on Indium Phosphide and Related Materials …, 2008
862008
Single-chip 220-GHz active heterodyne receiver and transmitter MMICs with on-chip integrated antenna
M Abbasi, SE Gunnarsson, N Wadefalk, R Kozhuharov, J Svedin, ...
IEEE transactions on microwave theory and techniques 59 (2), 466-478, 2010
852010
Metamorphic HEMT MMICs and modules for use in a high-bandwidth 210 GHz radar
A Tessmann, I Kallfass, A Leuther, H Massler, M Kuri, M Riessle, M Zink, ...
IEEE Journal of Solid-State Circuits 43 (10), 2194-2205, 2008
762008
Metamorphic HEMT technology for low-noise applications
A Leuther, A Tessmann, I Kallfass, R Losch, M Seelmann-Eggebert, ...
2009 IEEE International Conference on Indium Phosphide & Related Materials …, 2009
692009
A 220 GHz single-chip receiver MMIC with integrated antenna
SE Gunnarsson, N Wadefalk, J Svedin, S Cherednichenko, I Angelov, ...
IEEE microwave and wireless components letters 18 (4), 284-286, 2008
682008
Single-chip frequency multiplier chains for millimeter-wave signal generation
M Abbasi, R Kozhuharov, C Karnfelt, I Angelov, I Kallfass, A Leuther, ...
IEEE Transactions on Microwave Theory and Techniques 57 (12), 3134-3142, 2009
612009
220 GHz low-noise amplifier modules for radiometric imaging applications
A Tessmann, A Leuther, M Kuri, H Massler, M Riessle, H Essen, S Stanko, ...
2006 European Microwave Integrated Circuits Conference, 137-140, 2006
592006
-Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging
D Bleh, M Rösch, M Kuri, A Dyck, A Tessmann, A Leuther, S Wagner, ...
IEEE Transactions on Microwave Theory and Techniques 65 (9), 3474-3484, 2017
572017
Robust GaN HEMT low-noise amplifier MMICs for X-band applications
D Krausse, R Quay, A Tessmann, H Massler, A Leuther, T Merkle, ...
562004
A 300 GHz mHEMT amplifier module
A Tessmann, A Leuther, V Hurm, H Massler, M Zink, M Kuri, M Riessle, ...
2009 IEEE International Conference on Indium Phosphide & Related Materials …, 2009
552009
G-band metamorphic HEMT-based frequency multipliers
Y Campos-Roca, C Schworer, A Leuther, M Seelmann-Eggebert
IEEE transactions on microwave theory and techniques 54 (7), 2983-2992, 2006
542006
Multiple-throw millimeter-wave FET switches for frequencies from 60 up to 120 GHz
I Kallfass, S Diebold, H Massler, S Koch, M Seelmann-Eggebert, ...
2008 38th European Microwave Conference, 1453-1456, 2008
532008
Metamorphic HEMT MMICs and modules operating between 300 and 500 GHz
A Tessmann, A Leuther, V Hurm, I Kallfass, H Massler, M Kuri, M Riessle, ...
IEEE Journal of Solid-State Circuits 46 (10), 2193-2202, 2011
492011
A 600 GHz low-noise amplifier module
A Tessmann, A Leuther, H Massler, V Hurm, M Kuri, M Zink, M Riessle, ...
2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-3, 2014
482014
A high gain 600 GHz amplifier TMIC using 35 nm metamorphic HEMT technology
A Tessmann, A Leuther, H Massler, M Seelmann-Eggebert
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2012
482012
Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs
M Dammann, A Leuther, F Benkhelifa, T Feltgen, W Jantz
Physica status solidi (a) 195 (1), 81-86, 2003
472003
Nie można teraz wykonać tej operacji. Spróbuj ponownie później.
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