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Randall L. Headrick
Randall L. Headrick
Professor of Physics, University of Vermont
Zweryfikowany adres z uvm.edu - Strona główna
Tytuł
Cytowane przez
Cytowane przez
Rok
Pentacene thin film growth
R Ruiz, D Choudhary, B Nickel, T Toccoli, KC Chang, AC Mayer, P Clancy, ...
Chemistry of Materials 16 (23), 4497-4508, 2004
7522004
Spontaneous Nanoscale Corrugation of Ion-Eroded : The Role of Ion-Irradiation-Enhanced Viscous Flow
CC Umbach, RL Headrick, KC Chang
Physical review letters 87 (24), 246104, 2001
2862001
Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping
RL Headrick, IK Robinson, E Vlieg, LC Feldman
Physical review letters 63 (12), 1253, 1989
2391989
Structure of pentacene thin films
R Ruiz, AC Mayer, GG Malliaras, B Nickel, G Scoles, A Kazimirov, H Kim, ...
Applied Physics Letters 85 (21), 4926-4928, 2004
2092004
Orientation of pentacene films using surface alignment layers and its influence on thin-film transistor characteristics
ML Swiggers, G Xia, JD Slinker, AA Gorodetsky, GG Malliaras, ...
Applied Physics Letters 79 (9), 1300-1302, 2001
1722001
Anisotropic mobility in large grain size solution processed organic semiconductor thin films
RL Headrick, S Wo, F Sansoz, JE Anthony
Applied Physics Letters 92 (6), 2008
1652008
Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment
G Ozaydin, AS Özcan, Y Wang, KF Ludwig, H Zhou, RL Headrick, ...
Applied Physics Letters 87 (16), 2005
1552005
Small-angle x-ray scattering from lipid bilayers is well described by modified Caillé theory but not by paracrystalline theory
R Zhang, S Tristram-Nagle, W Sun, RL Headrick, TC Irving, RM Suter, ...
Biophysical journal 70 (1), 349-357, 1996
1301996
Clarification of the ripple phase of lecithin bilayers using fully hydrated, aligned samples
J Katsaras, S Tristram-Nagle, Y Liu, RL Headrick, E Fontes, PC Mason, ...
Physical Review E 61 (5), 5668, 2000
1232000
X-Ray Scattering Study of the Surface Morphology of Au(111) during Ion Irradiation
MVR Murty, T Curcic, A Judy, BH Cooper, AR Woll, JD Brock, S Kycia, ...
Physical review letters 80 (21), 4713, 1998
1211998
Early stages of pentacene film growth on silicon oxide
AC Mayer, R Ruiz, RL Headrick, A Kazimirov, GG Malliaras
Organic Electronics 5 (5), 257-263, 2004
1132004
Critical fluctuations in membranes
R Zhang, W Sun, S Tristram-Nagle, RL Headrick, RM Suter, JF Nagle
Physical review letters 74 (14), 2832, 1995
1011995
Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900° C
ML Green, BE Weir, D Brasen, YF Hsieh, G Higashi, A Feygenson, ...
Journal of applied physics 69 (2), 745-751, 1991
981991
Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films
S Wo, RL Headrick, JE Anthony
Journal of Applied Physics 111 (7), 2012
782012
Growth dynamics of pentacene thin films: Real-time synchrotron x-ray scattering study
AC Mayer, R Ruiz, H Zhou, RL Headrick, A Kazimirov, GG Malliaras
Physical Review B 73 (20), 205307, 2006
742006
Si (100)‐(2× 1) boron reconstruction: Self‐limiting monolayer doping
RL Headrick, BE Weir, AFJ Levi, DJ Eaglesham, LC Feldman
Applied physics letters 57 (26), 2779-2781, 1990
741990
Influence of surface reconstruction on the orientation of homoepitaxial silicon films
RL Headrick, BE Weir, J Bevk, BS Freer, DJ Eaglesham, LC Feldman
Physical review letters 65 (9), 1128, 1990
741990
Effects of Mo seeding on the formation of Si nanodots during low-energy ion bombardment
G Ozaydin, KF Ludwig, H Zhou, RL Headrick
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
732008
Low‐temperature homoepitaxy on Si (111)
BE Weir, BS Freer, RL Headrick, DJ Eaglesham, GH Gilmer, J Bevk, ...
Applied physics letters 59 (2), 204-206, 1991
641991
Si(100) surface morphology evolution during normal-incidence sputtering with 100–500 eV ions
F Ludwig Jr, CR Eddy Jr, O Malis, RL Headrick
Applied physics letters 81 (15), 2770-2772, 2002
632002
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