Obserwuj
Ruizhe Zhang
Ruizhe Zhang
Graduate research assitant, Virginia Tech
Zweryfikowany adres z vt.edu
Tytuł
Cytowane przez
Cytowane przez
Rok
Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2
N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ...
IEEE Electron Device Letters 40 (9), 1399-1402, 2019
1662019
Surge-energy and overvoltage ruggedness of P-gate GaN HEMTs
R Zhang, JP Kozak, M Xiao, J Liu, Y Zhang
IEEE Transactions on Power Electronics 35 (12), 13409-13419, 2020
1022020
1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability
J Liu, M Xiao, R Zhang, S Pidaparthi, H Cui, A Edwards, M Craven, ...
IEEE Transactions on Electron Devices 68 (4), 2025-2032, 2021
852021
Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability
M Xiao, B Wang, J Liu, R Zhang, Z Zhang, C Ding, S Lu, K Sasaki, GQ Lu, ...
IEEE Transactions on Power Electronics 36 (8), 8565-8569, 2021
812021
True breakdown voltage and overvoltage margin of GaN power HEMTs in hard switching
JP Kozak, R Zhang, Q Song, J Liu, W Saito, Y Zhang
IEEE Electron Device Letters 42 (4), 505-508, 2021
602021
Surge current and avalanche ruggedness of 1.2-kV vertical GaN pn diodes
J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, L Baubutr, ...
IEEE Transactions on Power Electronics 36 (10), 10959-10964, 2021
542021
Design and simulation of GaN superjunction transistors with 2-DEG channels and fin channels
M Xiao, R Zhang, D Dong, H Wang, Y Zhang
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
512019
Dynamic breakdown voltage of GaN power HEMTs
R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang
2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020
502020
Trap-mediated avalanche in large-area 1.2 kV vertical GaN pn diodes
J Liu, M Xiao, R Zhang, S Pidaparthi, C Drowley, L Baubutr, A Edwards, ...
IEEE Electron Device Letters 41 (9), 1328-1331, 2020
502020
Stability, reliability, and robustness of GaN power devices: A review
JP Kozak, R Zhang, M Porter, Q Song, J Liu, B Wang, R Wang, W Saito, ...
IEEE Transactions on Power Electronics, 2023
472023
Robustness of cascode GaN HEMTs in unclamped inductive switching
Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang
IEEE Transactions on Power Electronics 37 (4), 4148-4160, 2021
442021
Breakthrough short circuit robustness demonstrated in vertical GaN fin JFET
R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang
IEEE Transactions on Power Electronics 37 (6), 6253-6258, 2021
342021
Third quadrant conduction loss of 1.2–10 kV SiC MOSFETs: Impact of gate bias control
R Zhang, X Lin, J Liu, S Mocevic, D Dong, Y Zhang
IEEE Transactions on Power Electronics 36 (2), 2033-2043, 2020
342020
5 kV multi-channel AlGaN/GaN power Schottky barrier diodes with junction-fin-anode
M Xiao, Y Ma, Z Du, X Yan, R Zhang, K Cheng, K Liu, A Xie, E Beam, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2020
332020
Degradation of SiC MOSFETs under high-bias switching events
JP Kozak, R Zhang, J Liu, KDT Ngo, Y Zhang
IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021
252021
Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage
JP Kozak, Q Song, R Zhang, Y Ma, J Liu, Q Li, W Saito, Y Zhang
IEEE Transactions on Power Electronics 38 (1), 435-446, 2022
242022
Robust through-fin avalanche in vertical GaN Fin-JFET with soft failure mode
R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang
IEEE Electron Device Letters 43 (3), 366-369, 2022
242022
Tuning avalanche path in vertical GaN JFETs by gate driver design
J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, C Drowley, ...
IEEE Transactions on Power Electronics 37 (5), 5433-5443, 2021
222021
Surge energy robustness of GaN gate injection transistors
R Zhang, JP Kozak, J Liu, M Xiao, Y Zhang
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
182020
Failure mechanisms of cascode GaN HEMTs under overvoltage and surge energy events
Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
172021
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