| Si diffusion in epitaxial GaN R Jakiela, A Barcz, E Dumiszewska, A Jagoda physica status solidi c 3 (6), 1416-1419, 2006 | 43 | 2006 |
| X‐ray characterization of thick GaN layers grown by HVPE R Korbutowicz, J Kozłowski, E Dumiszewska, J Serafińczuk Crystal Research and Technology: Journal of Experimental and Industrial …, 2005 | 24 | 2005 |
| Oxygen diffusion into GaN from oxygen implanted GaN or Al2O3 R Jakiela, E Dumiszewska, P Caban, A Stonert, A Turos, A Barcz physica status solidi c 8 (5), 1513-1515, 2011 | 14 | 2011 |
| Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl M Wesołowski, W Strupiński, M Motyka, G Sęk, E Dumiszewska, P Caban, ... Opto-Electronics Review 19 (2), 140-144, 2011 | 11 | 2011 |
| New, epitaxial approach to SERS platform preparation–InP nanowires coated by an Au layer as a new, highly active, and stable SERS platform J Krajczewski, E Dumiszewska, D Czolak, ST Surdacka, A Kudelski Applied Surface Science 607, 155096, 2023 | 10 | 2023 |
| Growth of highly oriented MoS 2 via an intercalation process in the graphene/SiC (0001) system PP Michałowski, P Knyps, P Ciepielewski, PA Caban, E Dumiszewska, ... Physical Chemistry Chemical Physics 21 (37), 20641-20646, 2019 | 9 | 2019 |
| Wielozłączowe ogniwa słoneczne E Dumiszewska, P Knyps, M Wesołowski, W Strupiński Przegląd Elektrotechniczny 90 (5), 215--221, 2014 | 9 | 2014 |
| Interaction between dislocations density and carrier concentration of gallium nitride layers E Dumiszewska, W Strupinski, K Zdunek Journal of Superhard Materials 29 (3), 174-176, 2007 | 9 | 2007 |
| Resistivity contrast imaging in semiconductor structures using ultra-low energy scanning electron microscopy I Jóźwik, J Jagielski, E Dumiszewska, M Kamiński, U Kentsch Ultramicroscopy 228, 113333, 2021 | 7 | 2021 |
| Destructive role of oxygen in growth of molybdenum disulfide determined by secondary ion mass spectrometry PP Michałowski, P Knyps, P Ciepielewski, P Caban, E Dumiszewska, ... Physical Chemistry Chemical Physics 21 (17), 8837-8842, 2019 | 6 | 2019 |
| Thick GaN layers on sapphire with various buffer layers R Korbutowicz, E Dumiszewska, J Prażmowska Crystal Research and Technology: Journal of Experimental and Industrial …, 2007 | 5 | 2007 |
| The influence of pressure on the roughness of InGaP layers E Dumiszewska, P Knyps, M Wesolowski, M Teodorczyk, W Strupinski Acta Physica Polonica A 120 (6A), 2011 | 4 | 2011 |
| Damage-induced voltage alteration (DIVA) contrast in SEM images of ion-irradiated semiconductors I Jóźwik, A Barcz, E Dąbrowska, E Dumiszewska, PP Michałowski Ultramicroscopy 204, 6-9, 2019 | 3 | 2019 |
| Pomiary elektryczne i optyczne ogniw fotowoltaicznych Ge/InGaAs/InGaP P Knyps, E Dumiszewska, M Wesołowski, W Strupiński, J Kalbarczyk, ... Elektronika-Konstrukcje, technologie, zastosowania, 2013 | 3 | 2013 |
| Study of the activation process of Mg dopant in GaN: Mg layers B Paszkiewicz, R Paszkiewicz, A Szyszka, M Wosko, W Macherzynski, ... physica status solidi c 3 (3), 579-584, 2006 | 3 | 2006 |
| MOCVD growth of gallium and indium microparticles for SERS applications E Dumiszewska, P Caban, I Jóźwik, P Ciepielewski, JM Baranowski Journal of Materials Science: Materials in Electronics 32 (7), 8958-8964, 2021 | 2 | 2021 |
| Problems with cracking of AlxGa1-xN layers. E Dumiszewska, D Lenkiewicz, W Strupinski, A Jasik, RS Jakiela, ... Optica Applicata 35 (1), 2005 | 2 | 2005 |
| Podłoża alternatywne stosowane w epitaksji azotku galu R Korbutowicz, E Dumiszewska, J Grabowska Elektronika: konstrukcje, technologie, zastosowania 44 (11), 5-9, 2003 | 2 | 2003 |
| A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer Devices PP Michałowski, W Kaszub, P Knyps, K Rosiński, B Stańczyk, ... ACS applied materials & interfaces 10 (43), 37694-37698, 2018 | 1 | 2018 |
| Impacts of Tunnel Junction Thickness on the Performance of Triple-Junction Solar Cells P Sawicka-Chudy, G Wisz, D Płoch, M Cholewa, P Knyps, ... Journal of Nanoelectronics and Optoelectronics 12 (8), 737-741, 2017 | 1 | 2017 |
