| Integrated circuits based on bilayer MoS2 transistors H Wang, L Yu, YH Lee, Y Shi, A Hsu, ML Chin, LJ Li, M Dubey, J Kong, ... Nano letters 12 (9), 4674-4680, 2012 | 1736 | 2012 |
| Role of the seeding promoter in MoS2 growth by chemical vapor deposition X Ling, YH Lee, Y Lin, W Fang, L Yu, MS Dresselhaus, J Kong Nano letters 14 (2), 464-472, 2014 | 681 | 2014 |
| Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces YH Lee, L Yu, H Wang, W Fang, X Ling, Y Shi, CT Lin, JK Huang, ... Nano letters 13 (4), 1852-1857, 2013 | 674 | 2013 |
| Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ... Nano letters 14 (6), 3055-3063, 2014 | 575 | 2014 |
| Dielectric Screening of Excitons and Trions in Single-Layer MoS2 Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ... Nano letters 14 (10), 5569-5576, 2014 | 541 | 2014 |
| Parallel stitching of 2D materials X Ling, Y Lin, Q Ma, Z Wang, Y Song, L Yu, S Huang, W Fang, X Zhang, ... Advanced Materials 28 (12), 2322-2329, 2016 | 214 | 2016 |
| High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits L Yu, A Zubair, EJG Santos, X Zhang, Y Lin, Y Zhang, T Palacios Nano letters 15 (8), 4928-4934, 2015 | 185 | 2015 |
| High-risk breast lesions: a machine learning model to predict pathologic upgrade and reduce unnecessary surgical excision M Bahl, R Barzilay, AB Yedidia, NJ Locascio, L Yu, CD Lehman Radiology 286 (3), 810-818, 2018 | 129 | 2018 |
| Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ... Nano Letters 16 (10), 6349-6356, 2016 | 118 | 2016 |
| Functionalized graphene for high-performance two-dimensional spintronics devices L Li, R Qin, H Li, L Yu, Q Liu, G Luo, Z Gao, J Lu ACS nano 5 (4), 2601-2610, 2011 | 118 | 2011 |
| Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ... IEEE, 2015 | 115 | 2015 |
| Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition H Wang, L Yu, YH Lee, W Fang, A Hsu, P Herring, M Chin, M Dubey, LJ Li, ... 2012 International Electron Devices Meeting, 4.6. 1-4.6. 4, 2012 | 88 | 2012 |
| Electronics including graphene-based hybrid structures L Yu, H Wang, T Palacios US Patent App. 15/034,051, 2016 | 73 | 2016 |
| High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios IEEE Electron Device Letters 38 (2), 248-251, 2016 | 69 | 2016 |
| Design space and origin of off-state leakage in GaN vertical power diodes Y Zhang, HY Wong, M Sun, S Joglekar, L Yu, NA Braga, RV Mickevicius, ... 2015 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2015 | 63 | 2015 |
| Large-area 2-D electronics: materials, technology, and devices A Hsu, H Wang, YC Shin, B Mailly, X Zhang, L Yu, Y Shi, YH Lee, ... Proceedings of the IEEE 101 (7), 1638-1652, 2013 | 55 | 2013 |
| Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ... 2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016 | 50 | 2016 |
| Family-Dependent Rectification Characteristics in Ultra-Short Graphene Nanoribbon p–n Junctions J Zheng, X Yan, L Yu, H Li, R Qin, G Luo, Z Gao, D Yu, J Lu The Journal of Physical Chemistry C 115 (17), 8547-8554, 2011 | 33 | 2011 |
| Enhancement-Mode Single-layer CVD MoS2 FET Technology for Digital Electronics L Yu, D El-Damak, S Ha, X Ling, Y Lin, A Zubair, YH Lee, J Kong, ... IEDM 2015, 2015 | 29 | 2015 |
| All-Metallic High-Performance Field Effect Transistor Based on Telescoping Carbon Nanotubes: An ab Initio Study Q Liu, L Yu, H Li, R Qin, Z Jing, J Zheng, Z Gao, J Lu The Journal of Physical Chemistry C 115 (14), 6933-6938, 2011 | 23 | 2011 |
Tomás PalaciosMITZweryfikowany adres z mit.edu
