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Artur Kębłowski
Artur Kębłowski
Vigo System S.A.
Zweryfikowany adres z vigo.com.pl - Strona główna
Tytuł
Cytowane przez
Cytowane przez
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High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD
M Kopytko, A Kębłowski, W Gawron, P Madejczyk, A Kowalewski, ...
Opto-Electronics Review 21 (4), 402-405, 2013
572013
LWIR HgCdTe barrier photodiode with Auger-suppression
M Kopytko, A Kębłowski, W Gawron, W Pusz
Semiconductor Science and Technology 31 (3), 035025, 2016
312016
MOCVD grown HgCdTe barrier structures for HOT conditions (July 2014)
M Kopytko, A Kębłowski, W Gawron, A Kowalewski, A Rogalski
IEEE Transactions on Electron Devices 61 (11), 3803-3807, 2014
282014
Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors
M Kopytko, A Kębłowski, W Gawron, P Madejczyk
Opto-Electronics Review 23 (2), 143-148, 2015
272015
MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors
P Madejczyk, W Gawron, P Martyniuk, A Kębłowski, A Piotrowski, ...
Semiconductor science and technology 28 (10), 105017, 2013
272013
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
Optical and Quantum Electronics 48, 1-7, 2016
252016
Optimization of a HOT LWIR HgCdTe photodiode for fast response and high detectivity in zero-bias operation mode
M Kopytko, A Kębłowski, P Madejczyk, P Martyniuk, J Piotrowski, ...
Journal of Electronic Materials 46, 6045-6055, 2017
232017
Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
Journal of Electronic Materials 47, 299-304, 2018
212018
Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy
L Ciura, A Kolek, A Kębłowski, D Stanaszek, A Piotrowski, W Gawron, ...
Semiconductor Science and Technology 31 (3), 035004, 2016
212016
Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
Opto-Electronics Review 24 (1), 40-45, 2016
202016
Numerical analysis of HgCdTe dual-band infrared detector
M Kopytko, W Gawron, A Kębłowski, D Stępień, P Martyniuk, ...
Optical and Quantum Electronics 51 (3), 62, 2019
192019
Electrical properties of midwave and longwave InAs/GaSb superlattices grown on GaAs substrates by molecular beam epitaxy
D Benyahia, Ł Kubiszyn, K Michalczewski, J Boguski, A Kębłowski, ...
Nanoscale Research Letters 13, 1-7, 2018
192018
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Crystal Growth 483, 26-30, 2018
172018
MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions
P Martyniuk, A Koźniewski, A Kębłowski, W Gawron, A Rogalski
Opto-Electronics Review 22 (2), 118-126, 2014
142014
Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors
W Gawron, P Martyniuk, A Kębłowski, K Kolwas, D Stępień, J Piotrowski, ...
Solid-State Electronics 118, 61-65, 2016
132016
Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Semiconductors 39 (3), 033003, 2018
122018
MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation
M Kopytko, A Kębłowski, W Gawron, P Martyniuk, P Madejczyk, ...
Optical Engineering 54 (10), 105105-105105, 2015
112015
Higher operating temperature IR detectors of the MOCVD grown HgCdTe heterostructures
P Madejczyk, W Gawron, A Kębłowski, K Mlynarczyk, D Stępień, ...
Journal of Electronic Materials 49, 6908-6917, 2020
102020
Minority carrier lifetime in HgCdTe (100) epilayers and their potential application to background radiation limited MWIR photodiodes
M Kopytko, J Sobieski, W Gawron, A Kębłowski, J Piotrowski
Semiconductor Science and Technology 36 (5), 055003, 2021
82021
Electrical and optical performance of midwave infrared InAsSb heterostructure detectors
E Gomółka, M Kopytko, O Markowska, K Michalczewski, Ł Kubiszyn, ...
Optical Engineering 57 (2), 027107-027107, 2018
82018
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