High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD M Kopytko, A Kębłowski, W Gawron, P Madejczyk, A Kowalewski, ...
Opto-Electronics Review 21 (4), 402-405, 2013
42 2013 MOCVD grown HgCdTe barrier structures for HOT conditions (July 2014) M Kopytko, A Kębłowski, W Gawron, A Kowalewski, A Rogalski
IEEE Transactions on Electron Devices 61 (11), 3803-3807, 2014
22 2014 MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors P Madejczyk, W Gawron, P Martyniuk, A Kębłowski, A Piotrowski, ...
Semiconductor science and technology 28 (10), 105017, 2013
21 2013 LWIR HgCdTe barrier photodiode with Auger-suppression M Kopytko, A Kębłowski, W Gawron, W Pusz
Semiconductor Science and Technology 31 (3), 035025, 2016
20 2016 Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors M Kopytko, A Kębłowski, W Gawron, P Madejczyk
Opto-Electronics Review 23 (2), 143-148, 2015
18 2015 Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy L Ciura, A Kolek, A Kębłowski, D Stanaszek, A Piotrowski, W Gawron, ...
Semiconductor Science and Technology 31 (3), 035004, 2016
16 2016 Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Opto-Electronics Review 24 (1), 40-45, 2016
15 2016 Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Optical and Quantum Electronics 48 (9), 428, 2016
14 2016 Optimization of a HOT LWIR HgCdTe photodiode for fast response and high detectivity in zero-bias operation mode M Kopytko, A Kębłowski, P Madejczyk, P Martyniuk, J Piotrowski, ...
Journal of Electronic Materials 46 (10), 6045-6055, 2017
13 2017 Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Electronic Materials 47 (1), 299-304, 2018
12 2018 Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy D Benyahia, K Michalczewski, J Boguski, A Kębłowski, P Martyniuk, ...
Nanoscale research letters 13 (1), 196, 2018
10 2018 Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Semiconductors 39 (3), 033003, 2018
10 2018 MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions P Martyniuk, A Koźniewski, A Kębłowski, W Gawron, A Rogalski
Opto-Electronics Review 22 (2), 118-126, 2014
10 2014 Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Crystal Growth 483, 26-30, 2018
9 2018 Interface Influence on the Long-Wave Auger Suppressed Multilayer N+ P Martyniuk, M Kopytko, A Kębłowski, K Grodecki, W Gawron, E Gomułka
IEEE Sensors Journal 17 (3), 674-678, 2016
8 2016 Electrical and optical performance of mid-wavelength infrared InAsSb heterostructure detectors E Gomółka, M Kopytko, K Michalczewski, Ł Kubiszyn, A Kębłowski, ...
Electro-Optical and Infrared Systems: Technology and Applications XIV 10433 …, 2017
7 2017 Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique. K Michalczewski, F Ivaldi, Ł Kubiszyn, D Benyahia, J Boguski, ...
Acta Physica Polonica, A. 132 (2), 2017
7 2017 Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors W Gawron, P Martyniuk, A Kębłowski, K Kolwas, D Stępień, J Piotrowski, ...
Solid-State Electronics 118, 61-65, 2016
7 2016 Numerical analysis of HgCdTe dual-band infrared detector M Kopytko, W Gawron, A Kębłowski, D Stępień, P Martyniuk, ...
Optical and Quantum Electronics 51 (3), 62, 2019
6 2019 Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors A Kębłowski, W Gawron, P Martyniuk, D Stępień, K Kolwas, J Piotrowski, ...
Infrared Technology and Applications XLII 9819, 98191E, 2016
5 2016 