Artur Kębłowski
Artur Kębłowski
Vigo System S.A.
Zweryfikowany adres z vigo.com.pl - Strona główna
Tytuł
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High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD
M Kopytko, A Kębłowski, W Gawron, P Madejczyk, A Kowalewski, ...
Opto-Electronics Review 21 (4), 402-405, 2013
422013
MOCVD grown HgCdTe barrier structures for HOT conditions (July 2014)
M Kopytko, A Kębłowski, W Gawron, A Kowalewski, A Rogalski
IEEE Transactions on Electron Devices 61 (11), 3803-3807, 2014
222014
MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors
P Madejczyk, W Gawron, P Martyniuk, A Kębłowski, A Piotrowski, ...
Semiconductor science and technology 28 (10), 105017, 2013
212013
LWIR HgCdTe barrier photodiode with Auger-suppression
M Kopytko, A Kębłowski, W Gawron, W Pusz
Semiconductor Science and Technology 31 (3), 035025, 2016
202016
Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors
M Kopytko, A Kębłowski, W Gawron, P Madejczyk
Opto-Electronics Review 23 (2), 143-148, 2015
182015
Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy
L Ciura, A Kolek, A Kębłowski, D Stanaszek, A Piotrowski, W Gawron, ...
Semiconductor Science and Technology 31 (3), 035004, 2016
162016
Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Opto-Electronics Review 24 (1), 40-45, 2016
152016
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Optical and Quantum Electronics 48 (9), 428, 2016
142016
Optimization of a HOT LWIR HgCdTe photodiode for fast response and high detectivity in zero-bias operation mode
M Kopytko, A Kębłowski, P Madejczyk, P Martyniuk, J Piotrowski, ...
Journal of Electronic Materials 46 (10), 6045-6055, 2017
132017
Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Electronic Materials 47 (1), 299-304, 2018
122018
Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
D Benyahia, K Michalczewski, J Boguski, A Kębłowski, P Martyniuk, ...
Nanoscale research letters 13 (1), 196, 2018
102018
Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Semiconductors 39 (3), 033003, 2018
102018
MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions
P Martyniuk, A Koźniewski, A Kębłowski, W Gawron, A Rogalski
Opto-Electronics Review 22 (2), 118-126, 2014
102014
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Crystal Growth 483, 26-30, 2018
92018
Interface Influence on the Long-Wave Auger Suppressed Multilayer N+ P+p+n+ HgCdTe HOT Detector Performance
P Martyniuk, M Kopytko, A Kębłowski, K Grodecki, W Gawron, E Gomułka
IEEE Sensors Journal 17 (3), 674-678, 2016
82016
Electrical and optical performance of mid-wavelength infrared InAsSb heterostructure detectors
E Gomółka, M Kopytko, K Michalczewski, Ł Kubiszyn, A Kębłowski, ...
Electro-Optical and Infrared Systems: Technology and Applications XIV 10433 …, 2017
72017
Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique.
K Michalczewski, F Ivaldi, Ł Kubiszyn, D Benyahia, J Boguski, ...
Acta Physica Polonica, A. 132 (2), 2017
72017
Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors
W Gawron, P Martyniuk, A Kębłowski, K Kolwas, D Stępień, J Piotrowski, ...
Solid-State Electronics 118, 61-65, 2016
72016
Numerical analysis of HgCdTe dual-band infrared detector
M Kopytko, W Gawron, A Kębłowski, D Stępień, P Martyniuk, ...
Optical and Quantum Electronics 51 (3), 62, 2019
62019
Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors
A Kębłowski, W Gawron, P Martyniuk, D Stępień, K Kolwas, J Piotrowski, ...
Infrared Technology and Applications XLII 9819, 98191E, 2016
52016
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