Si Young Lee
Si Young Lee
Sungkyunkwan University / Harvard University
Zweryfikowany adres z g.harvard.edu
Cytowane przez
Cytowane przez
Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations
GH Han, NJ Kybert, CH Naylor, BS Lee, J Ping, JH Park, J Kang, SY Lee, ...
Nature communications 6 (1), 6128, 2015
The control of neural cell-to-cell interactions through non-contact electrical field stimulation using graphene electrodes
C Heo, J Yoo, S Lee, A Jo, S Jung, H Yoo, YH Lee, M Suh
Biomaterials 32 (1), 19-27, 2011
Large Work Function Modulation of Monolayer MoS2 by Ambient Gases
SY Lee, UJ Kim, JG Chung, H Nam, HY Jeong, GH Han, H Kim, HM Oh, ...
ACS nano 10 (6), 6100-6107, 2016
Small hysteresis nanocarbon-based integrated circuits on flexible and transparent plastic substrate
WJ Yu, SY Lee, SH Chae, D Perello, GH Han, M Yun, YH Lee
Nano letters 11 (3), 1344-1350, 2011
Ultra‐transparent, flexible single‐walled carbon nanotube non‐volatile memory device with an oxygen‐decorated graphene electrode
WJ Yu, SH Chae, SY Lee, DL Duong, YH Lee
Advanced Materials 23 (16), 1889-1893, 2011
Laser thinning for monolayer graphene formation: heat sink and interference effect
GH Han, SJ Chae, ES Kim, F Gunes, IH Lee, SW Lee, SY Lee, SC Lim, ...
ACS nano 5 (1), 263-268, 2011
Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors
SY Lee, SW Lee, SM Kim, WJ Yu, YW Jo, YH Lee
Acs Nano 5 (3), 2369-2375, 2011
Chemically modulated band gap in bilayer graphene memory transistors with high on/off ratio
SY Lee, DL Duong, QA Vu, Y Jin, P Kim, YH Lee
Acs Nano 9 (9), 9034-9042, 2015
Optical Gain in MoS2 via Coupling with Nanostructured Substrate: Fabry–Perot Interference and Plasmonic Excitation
HY Jeong, UJ Kim, H Kim, GH Han, H Lee, MS Kim, Y Jin, TH Ly, SY Lee, ...
ACS nano 10 (9), 8192-8198, 2016
Chemically doped random network carbon nanotube p–n junction diode for rectifier
C Biswas, SY Lee, TH Ly, A Ghosh, QN Dang, YH Lee
ACS nano 5 (12), 9817-9823, 2011
Aharonov–Bohm effect in graphene-based Fabry–Pérot quantum Hall interferometers
Y Ronen, T Werkmeister, D Haie Najafabadi, AT Pierce, LE Anderson, ...
Nature nanotechnology 16 (5), 563-569, 2021
Visualizing point defects in transition-metal dichalcogenides using optical microscopy
HY Jeong, SY Lee, TH Ly, GH Han, H Kim, H Nam, Z Jiong, BG Shin, ...
Acs Nano 10 (1), 770-777, 2016
Direct growth of etch pit-free GaN crystals on few-layer graphene
SJ Chae, YH Kim, TH Seo, DL Duong, SM Lee, MH Park, ES Kim, JJ Bae, ...
RSC Advances 5 (2), 1343-1349, 2015
Andreev reflection in the fractional quantum Hall state
Ö Gül, Y Ronen, SY Lee, H Shapourian, J Zauberman, YH Lee, ...
Physical Review X 12 (2), 021057, 2022
Modulating Electronic Properties of Monolayer MoS2 via Electron-Withdrawing Functional Groups of Graphene Oxide
HM Oh, H Jeong, GH Han, H Kim, JH Kim, SY Lee, SY Jeong, S Jeong, ...
ACS nano 10 (11), 10446-10453, 2016
F GÜNEŞ, GH Han, HJ Shin, SY Lee, M Jin, DL Duong, SJ Chae, ES Kim, ...
Nano 6 (05), 409-418, 2011
Synthesis of edge-closed graphene ribbons with enhanced conductivity
WJ Yu, SH Chae, D Perello, SY Lee, GH Han, M Yun, YH Lee
Acs Nano 4 (9), 5480-5486, 2010
Band-gap engineering in chemically conjugated bilayer graphene: Ab initio calculations
DL Duong, SM Lee, SH Chae, QH Ta, SY Lee, GH Han, JJ Bae, YH Lee
Physical Review B 85 (20), 205413, 2012
Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors
S Won Lee, D Suh, S Young Lee, Y Hee Lee
Applied Physics Letters 104 (16), 2014
Positive gate bias stress instability of carbon nanotube thin film transistors
SW Lee, SY Lee, SC Lim, Y Kwon, JS Yoon, K Uh, YH Lee
Applied Physics Letters 101 (5), 2012
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