| An AlN/Al0. 85Ga0. 15N high electron mobility transistor AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ... Applied Physics Letters 109 (3), 2016 | 140 | 2016 |
| Compact modeling of total ionizing dose and aging effects in MOS technologies IS Esqueda, HJ Barnaby, MP King IEEE Transactions on Nuclear Science 62 (4), 1501-1515, 2015 | 133 | 2015 |
| Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ... IEEE Transactions on Electron Devices 63 (1), 419-425, 2015 | 125 | 2015 |
| High voltage and high current density vertical GaN power diodes AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ... Electronics Letters 52 (13), 1170-1171, 2016 | 95 | 2016 |
| Electron-induced single-event upsets in static random access memory MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ... IEEE Transactions on Nuclear Science 60 (6), 4122-4129, 2013 | 80 | 2013 |
| The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ML Alles, ... IEEE Transactions on Nuclear Science 57 (6), 3169-3175, 2010 | 79 | 2010 |
| Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ... IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016 | 78 | 2016 |
| Physical processes and applications of the Monte Carlo radiative energy deposition (MRED) code RA Reed, RA Weller, MH Mendenhall, DM Fleetwood, KM Warren, ... IEEE Transactions on Nuclear Science 62 (4), 1441-1461, 2015 | 77 | 2015 |
| Heavy-ion-induced current transients in bulk and SOI FinFETs F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ... IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012 | 59 | 2012 |
| Technology scaling comparison of flip-flop heavy-ion single-event upset cross sections NJ Gaspard, S Jagannathan, ZJ Diggins, MP King, SJ Wen, R Wong, ... IEEE Transactions on Nuclear Science 60 (6), 4368-4373, 2013 | 54 | 2013 |
| Charge generation by secondary particles from nuclear reactions in BEOL materials NA Dodds, RA Reed, MH Mendenhall, RA Weller, MA Clemens, PE Dodd, ... IEEE Transactions on Nuclear Science 56 (6), 3172-3179, 2009 | 47 | 2009 |
| SEL-sensitive area mapping and the effects of reflection and diffraction from metal lines on laser SEE testing NA Dodds, NC Hooten, RA Reed, RD Schrimpf, JH Warner, NJH Roche, ... IEEE Transactions on Nuclear Science 60 (4), 2550-2558, 2013 | 41 | 2013 |
| Selection of well contact densities for latchup-immune minimal-area ICs NA Dodds, JM Hutson, JA Pellish, RA Reed, HS Kim, MD Berg, ... IEEE Transactions on Nuclear Science 57 (6), 3575-3581, 2010 | 37 | 2010 |
| Radiation response of AlGaN-channel HEMTs MJ Martinez, MP King, AG Baca, AA Allerman, AA Armstrong, BA Klein, ... IEEE Transactions on Nuclear Science 66 (1), 344-351, 2018 | 32 | 2018 |
| TID and Displacement Damage Resilience of 1T1RResistive Memories SL Weeden-Wright, WG Bennett, NC Hooten, EX Zhang, MW McCurdy, ... IEEE Transactions on Nuclear Science 61 (6), 2972-2978, 2014 | 32 | 2014 |
| Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs JM Trippe, RA Reed, RA Austin, BD Sierawski, RA Weller, ... IEEE Transactions on Nuclear Science 62 (6), 2709-2716, 2015 | 30 | 2015 |
| Single particle displacement damage in silicon EC Auden, RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, ... IEEE Transactions on Nuclear Science 59 (6), 3054-3061, 2012 | 30 | 2012 |
| Performance and breakdown characteristics of irradiated vertical power GaN PiN diodes MP King, AM Armstrong, JR Dickerson, G Vizkelethy, RM Fleming, ... IEEE Transactions on Nuclear Science 62 (6), 2912-2918, 2015 | 29 | 2015 |
| Single-event characterization of 16 nm finfet xilinx ultrascale+ devices with heavy ion and neutron irradiation DS Lee, M King, W Evans, M Cannon, A Pérez-Celis, J Anderson, ... 2018 IEEE Radiation Effects Data Workshop (REDW), 1-8, 2018 | 28 | 2018 |
| Al0. 3Ga0. 7N PN diode with breakdown voltage> 1600 V AA Allerman, AM Armstrong, AJ Fischer, JR Dickerson, MH Crawford, ... Electronics Letters 52 (15), 1319-1321, 2016 | 27 | 2016 |
