Properties of Zn‐doped VPE‐grown GaN. I. Luminescence data in relation to doping conditions B Monemar, O Lagerstedt, HP Gislason
Journal of Applied Physics 51 (1), 625-639, 1980
211 1980 Vacancy defects as compensating centers in Mg-doped GaN S Hautakangas, J Oila, M Alatalo, K Saarinen, L Liszkay, D Seghier, ...
Physical review letters 90 (13), 137402, 2003
157 2003 Vacancy defect-induced d0 ferromagnetism in undoped ZnO nanostructures: Controversial origin and challenges B Qi, S Ólafsson, HP Gíslason
Progress in Materials Science 90, 45-74, 2017
90 2017 Frequency-dependent conductivity in lithium-diffused and annealed GaAs JT Gudmundsson, HG Svavarsson, S Gudjonsson, HP Gislason
Physica B: Condensed Matter 340, 324-328, 2003
76 2003 Shifting photoluminescence bands in high-resistivity Li-compensated GaAs HP Gislason, BH Yang, M Linnarsson
Physical Review B 47 (15), 9418, 1993
76 1993 Photoluminescence studies of the 1.911-eV Cu-related complex in GaP HP Gislason, B Monemar, PJ Dean, DC Herbert, S Depinna, BC Cavenett, ...
Physical Review B 26 (2), 827, 1982
75 1982 Optical properties of the Cu-related characteristic-orange-luminescence center in GaP B Monemar, HP Gislason, PJ Dean, DC Herbert
Physical Review B 25 (12), 7719, 1982
64 1982 Properties of Zn‐doped VPE‐grown GaN. II. Optical cross sections B Monemar, HP Gislason, O Lagerstedt
Journal of Applied Physics 51 (1), 640-649, 1980
57 1980 Optical detection of magnetic resonance of the zinc vacancy in ZnSe via magnetic circular dichroism DY Jeon, HP Gislason, GD Watkins
Physical Review B 48 (11), 7872, 1993
56 1993 Acceptor associates and bound excitons in GaAs: Cu ZG Wang, HP Gislason, B Monemar
Journal of applied physics 58 (1), 230-239, 1985
54 1985 Paramagnetism in Mn/Fe implanted ZnO HP Gunnlaugsson, TE Mølholt, R Mantovan, H Masenda, D Naidoo, ...
Applied Physics Letters 97 (14), 2010
48 2010 Determination of the DY Jeon, HP Gislason, JF Donegan, GD Watkins
Physical Review B 36 (2), 1324, 1987
47 1987 Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN: Mg D Seghier, HP Gislason
Journal of Applied Physics 88 (11), 6483-6487, 2000
40 2000 Neutral (Cu-Li) complexes in GaP: The (Cu-Li HP Gislason, B Monemar, ME Pistol, PJ Dean, DC Herbert, A Kana, ...
Physical Review B 31 (6), 3774, 1985
35 1985 Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy D Seghier, HP Gislason
Journal of Materials Science: Materials in Electronics 19, 687-691, 2008
33 2008 Properties of GaN tunneling MIS light‐emitting diodes O Lagerstedt, B Monemar, H Gislason
Journal of Applied Physics 49 (5), 2953-2957, 1978
29 1978 Neutral (Cu-Li) complexes in GaP: The (Cu-Li HP Gislason, B Monemar, ME Pistol, PJ Dean, DC Herbert, S Depinna, ...
Physical Review B 32 (6), 3958, 1985
25 1985 Lattice locations and properties of Fe in Co/Fe co-implanted ZnO HP Gunnlaugsson, K Johnston, TE Mølholt, G Weyer, R Mantovan, ...
Applied Physics Letters 100 (4), 2012
24 2012 Gallium and nitrogen vacancies in GaN: Impurity decoration effects S Hautakangas, V Ranki, I Makkonen, MJ Puska, K Saarinen, L Liszkay, ...
Physica B: Condensed Matter 376, 424-427, 2006
24 2006 Neutral (Cu-Li) complexes in GaP: The (Cu-Li HP Gislason, B Monemar, ME Pistol, A Kana’ah, BC Cavenett
Physical Review B 33 (2), 1233, 1986
24 1986 