| Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting X Zhang, J Grajal, JL Vazquez-Roy, U Radhakrishna, X Wang, W Chern, ... Nature 566 (7744), 368-372, 2019 | 173 | 2019 |
| Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ... Nano Letters 16 (10), 6349-6356, 2016 | 115 | 2016 |
| Negative capacitance behavior in a leaky ferroelectric AI Khan, U Radhakrishna, K Chatterjee, S Salahuddin, DA Antoniadis IEEE Transactions on Electron Devices 63 (11), 4416-4422, 2016 | 108 | 2016 |
| Work function engineering for performance improvement in leaky negative capacitance FETs AI Khan, U Radhakrishna, S Salahuddin, D Antoniadis IEEE Electron Device Letters 38 (9), 1335-1338, 2017 | 63 | 2017 |
| Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection U Radhakrishna, L Wei, DS Lee, T Palacios, D Antoniadis 2012 International Electron Devices Meeting, 13.6. 1-13.6. 4, 2012 | 41 | 2012 |
| MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs U Radhakrishna, T Imada, T Palacios, D Antoniadis physica status solidi (c) 11 (3‐4), 848-852, 2014 | 39 | 2014 |
| Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation S Joglekar, U Radhakrishna, D Piedra, D Antoniadis, T Palacios Electron Devices Meeting (IEDM), 2017 IEEE International, 2017 | 36 | 2017 |
| A 5.9-GHz fully integrated GaN frontend design with physics-based RF compact model P Choi, S Goswami, U Radhakrishna, D Khanna, CC Boon, HS Lee, ... IEEE Transactions on Microwave Theory and Techniques 63 (4), 1163-1173, 2015 | 36 | 2015 |
| Negative capacitance carbon nanotube FETs T Srimani, G Hills, MD Bishop, U Radhakrishna, A Zubair, RS Park, ... IEEE Electron Device Letters 39 (2), 304-307, 2017 | 34 | 2017 |
| Facilitation of GaN-based RF-and HV-circuit designs using MVS-GaN HEMT compact model U Radhakrishna, P Choi, DA Antoniadis IEEE Transactions on Electron Devices 66 (1), 95-105, 2018 | 33 | 2018 |
| High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping U Radhakrishna, D Piedra, Y Zhang, T Palacios, D Antoniadis 2013 IEEE International Electron Devices Meeting, 32.7. 1-32.7. 4, 2013 | 30 | 2013 |
| Linearity enhancement of a fully integrated 6-GHz GaN power amplifier P Choi, U Radhakrishna, CC Boon, LS Peh, D Antoniadis IEEE Microwave and Wireless Components Letters 27 (10), 927-929, 2017 | 23 | 2017 |
| Modeling gallium-nitride based high electron mobility transistors: Linking device physics to high voltage and high frequency circuit design U Radhakrishna Massachusetts Institute of Technology, 2016 | 22 | 2016 |
| MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation U Radhakrishna, P Choi, S Goswami, LS Peh, T Palacios, D Antoniadis 2014 IEEE International Electron Devices Meeting, 11.6. 1-11.6. 4, 2014 | 22 | 2014 |
| Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model U Radhakrishna, P Choi, J Grajal, LS Peh, T Palacios, D Antoniadis 2016 IEEE International Electron Devices Meeting (IEDM), 3.7. 1-3.7. 4, 2016 | 18 | 2016 |
| A fully integrated inductor-based GaN boost converter with self-generated switching signal for vehicular applications P Choi, U Radhakrishna, CC Boon, D Antoniadis, LS Peh IEEE Transactions on Power Electronics 31 (8), 5365-5368, 2016 | 18 | 2016 |
| Modeling of SOI-LDMOS transistor including impact ionization, snapback, and self-heating U Radhakrishna, A DasGupta, N DasGupta, A Chakravorty IEEE transactions on electron devices 58 (11), 4035-4041, 2011 | 18 | 2011 |
| GaNFET compact model for linking device physics, high voltage circuit design and technology optimization U Radhakrishna, S Lim, P Choi, T Palacios, D Antoniadis 2015 IEEE International Electron Devices Meeting (IEDM), 9.6. 1-9.6. 4, 2015 | 14 | 2015 |
| A compact transport and charge model for GaN-based high electron mobility transistors for RF applications U Radhakrishna Massachusetts Institute of Technology, 2013 | 13 | 2013 |
| Quantifying the impact of gate efficiency on switching steepness of quantum-well tunnel-fets: Experiments, modeling, and design guidelines T Yu, U Radhakrishna, JL Hoyt, DA Antoniadis 2015 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2015 | 12 | 2015 |
Tomás PalaciosMITZweryfikowany adres z mit.edu
