Ujwal Radhakrishna
Ujwal Radhakrishna
Analog Design Engineer, Kilby Research Labs, Texas Instruments Inc.
Zweryfikowany adres z ti.com - Strona główna
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Cytowane przez
Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
X Zhang, J Grajal, JL Vazquez-Roy, U Radhakrishna, X Wang, W Chern, ...
Nature 566 (7744), 368-372, 2019
Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ...
Nano Letters 16 (10), 6349-6356, 2016
Negative capacitance behavior in a leaky ferroelectric
AI Khan, U Radhakrishna, K Chatterjee, S Salahuddin, DA Antoniadis
IEEE Transactions on Electron Devices 63 (11), 4416-4422, 2016
Work function engineering for performance improvement in leaky negative capacitance FETs
AI Khan, U Radhakrishna, S Salahuddin, D Antoniadis
IEEE Electron Device Letters 38 (9), 1335-1338, 2017
Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection
U Radhakrishna, L Wei, DS Lee, T Palacios, D Antoniadis
2012 International Electron Devices Meeting, 13.6. 1-13.6. 4, 2012
MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs
U Radhakrishna, T Imada, T Palacios, D Antoniadis
physica status solidi (c) 11 (3‐4), 848-852, 2014
Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation
S Joglekar, U Radhakrishna, D Piedra, D Antoniadis, T Palacios
Electron Devices Meeting (IEDM), 2017 IEEE International, 2017
A 5.9-GHz fully integrated GaN frontend design with physics-based RF compact model
P Choi, S Goswami, U Radhakrishna, D Khanna, CC Boon, HS Lee, ...
IEEE Transactions on Microwave Theory and Techniques 63 (4), 1163-1173, 2015
Negative capacitance carbon nanotube FETs
T Srimani, G Hills, MD Bishop, U Radhakrishna, A Zubair, RS Park, ...
IEEE Electron Device Letters 39 (2), 304-307, 2017
Facilitation of GaN-based RF-and HV-circuit designs using MVS-GaN HEMT compact model
U Radhakrishna, P Choi, DA Antoniadis
IEEE Transactions on Electron Devices 66 (1), 95-105, 2018
High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping
U Radhakrishna, D Piedra, Y Zhang, T Palacios, D Antoniadis
2013 IEEE International Electron Devices Meeting, 32.7. 1-32.7. 4, 2013
Linearity enhancement of a fully integrated 6-GHz GaN power amplifier
P Choi, U Radhakrishna, CC Boon, LS Peh, D Antoniadis
IEEE Microwave and Wireless Components Letters 27 (10), 927-929, 2017
Modeling gallium-nitride based high electron mobility transistors: Linking device physics to high voltage and high frequency circuit design
U Radhakrishna
Massachusetts Institute of Technology, 2016
MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation
U Radhakrishna, P Choi, S Goswami, LS Peh, T Palacios, D Antoniadis
2014 IEEE International Electron Devices Meeting, 11.6. 1-11.6. 4, 2014
Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model
U Radhakrishna, P Choi, J Grajal, LS Peh, T Palacios, D Antoniadis
2016 IEEE International Electron Devices Meeting (IEDM), 3.7. 1-3.7. 4, 2016
A fully integrated inductor-based GaN boost converter with self-generated switching signal for vehicular applications
P Choi, U Radhakrishna, CC Boon, D Antoniadis, LS Peh
IEEE Transactions on Power Electronics 31 (8), 5365-5368, 2016
Modeling of SOI-LDMOS transistor including impact ionization, snapback, and self-heating
U Radhakrishna, A DasGupta, N DasGupta, A Chakravorty
IEEE transactions on electron devices 58 (11), 4035-4041, 2011
GaNFET compact model for linking device physics, high voltage circuit design and technology optimization
U Radhakrishna, S Lim, P Choi, T Palacios, D Antoniadis
2015 IEEE International Electron Devices Meeting (IEDM), 9.6. 1-9.6. 4, 2015
A compact transport and charge model for GaN-based high electron mobility transistors for RF applications
U Radhakrishna
Massachusetts Institute of Technology, 2013
Quantifying the impact of gate efficiency on switching steepness of quantum-well tunnel-fets: Experiments, modeling, and design guidelines
T Yu, U Radhakrishna, JL Hoyt, DA Antoniadis
2015 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2015
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