Patrick Kung
Patrick Kung
Zweryfikowany adres z eng.ua.edu
Tytuł
Cytowane przez
Cytowane przez
Rok
AlGaN ultraviolet photoconductors grown on sapphire
D Walker, X Zhang, P Kung, A Saxler, S Javadpour, J Xu, M Razeghi
Applied Physics Letters 68 (15), 2100-2101, 1996
2401996
High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi
Applied physics letters 66 (22), 2958-2960, 1995
2321995
Electroluminescence at from a heterojunction light emitting diode
DJ Rogers, F Hosseini Teherani, A Yasan, K Minder, P Kung, M Razeghi
Applied physics letters 88 (14), 141918, 2006
2142006
High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN
D Walker, E Monroy, P Kung, J Wu, M Hamilton, FJ Sanchez, J Diaz, ...
Applied physics letters 74 (5), 762-764, 1999
2141999
High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
K Mayes, A Yasan, R McClintock, D Shiell, SR Darvish, P Kung, ...
Applied physics letters 84 (7), 1046-1048, 2004
2032004
High-quality visible-blind AlGaN p-i-n photodiodes
E Monroy, M Hamilton, D Walker, P Kung, FJ Sánchez, M Razeghi
Applied physics letters 74 (8), 1171-1173, 1999
1941999
Solar-blind AlGaN photodiodes with very low cutoff wavelength
D Walker, V Kumar, K Mi, P Sandvik, P Kung, XH Zhang, M Razeghi
Applied Physics Letters 76 (4), 403-405, 2000
1852000
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
A Yasan, R McClintock, K Mayes, D Shiell, L Gautero, SR Darvish, P Kung, ...
Applied Physics Letters 83 (23), 4701-4703, 2003
1842003
(0) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
D Walker, X Zhang, A Saxler, P Kung, J Xu, M Razeghi
Applied physics letters 70 (8), 949-951, 1997
1571997
Visible blind GaN p-i-n photodiodes
D Walker, A Saxler, P Kung, X Zhang, M Hamilton, J Diaz, M Razeghi
Applied physics letters 72 (25), 3303-3305, 1998
1551998
High quantum efficiency AlGaN solar-blind p-i-n photodiodes
R McClintock, A Yasan, K Mayes, D Shiell, SR Darvish, P Kung, ...
Applied physics letters 84 (8), 1248-1250, 2004
1542004
Determination of the band-gap energy of grown by metal–organic chemical-vapor deposition
KS Kim, A Saxler, P Kung, M Razeghi, KY Lim
Applied physics letters 71 (6), 800-802, 1997
1441997
Growth of AlxGa1−xN:Ge on sapphire and silicon substrates
X Zhang, P Kung, A Saxler, D Walker, TC Wang, M Razeghi
Applied physics letters 67 (12), 1745-1747, 1995
1371995
Photovoltaic effects in GaN structures with pn junctions
X Zhang, P Kung, D Walker, J Piotrowski, A Rogalski, A Saxler, ...
Applied physics letters 67 (14), 2028-2030, 1995
1311995
High quality aluminum nitride epitaxial layers grown on sapphire substrates
A Saxler, P Kung, CJ Sun, E Bigan, M Razeghi
Applied physics letters 64 (3), 339-341, 1994
1261994
Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
A Yasan, R McClintock, K Mayes, SR Darvish, P Kung, M Razeghi
Applied physics letters 81 (5), 801-802, 2002
1252002
solar-blind focal plane arrays based on
R McClintock, K Mayes, A Yasan, D Shiell, P Kung, M Razeghi
Applied Physics Letters 86 (1), 011117, 2005
1182005
AlxGa1− xN for solar-blind UV detectors
P Sandvik, K Mi, F Shahedipour, R McClintock, A Yasan, P Kung, ...
Journal of crystal growth 231 (3), 366-370, 2001
1182001
Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes
R McClintock, JL Pau, K Minder, C Bayram, P Kung, M Razeghi
Applied Physics Letters 90 (14), 141112, 2007
1152007
A crystallographic model of (00⋅ 1) aluminum nitride epitaxial thin film growth on (00⋅ 1) sapphire substrate
CJ Sun, P Kung, A Saxler, H Ohsato, K Haritos, M Razeghi
Journal of applied physics 75 (8), 3964-3967, 1994
1111994
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