| Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy … P Wiśniewski, J Jasiński, A Mazurak, B Stonio, B Majkusiak Materials 14 (20), 6042, 2021 | 10 | 2021 |
| Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers A Mazurak, R Mroczyński, J Jasiński, D Tanous, B Majkusiak, S Kano, ... Microelectronic Engineering 178, 298-303, 2017 | 10 | 2017 |
| Silicon-Carbide (SiC) nanocrystal technology and characterization and its applications in memory structures A Mazurak, R Mroczyński, D Beke, A Gali Nanomaterials 10 (12), 2387, 2020 | 8 | 2020 |
| Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures J Jasiński, A Mazurak, R Mroczyński, B Majkusiak Microelectronic Engineering 147, 349-353, 2015 | 6 | 2015 |
| Effect of nanocrystal geometric location on tunnel currents and small‐signal admittance of MIS structures A Mazurak, J Jasiński, B Majkusiak physica status solidi (c) 13 (10‐12), 1035-1039, 2016 | 5 | 2016 |
| Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices P Wiśniewski, M Nieborek, A Mazurak, J Jasiński Micromachines 13 (10), 1641, 2022 | 4 | 2022 |
| Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well B Majkusiak, RB Beck, A Mazurak, J Grabowski Microelectronics Reliability 51 (7), 1172-1177, 2011 | 4 | 2011 |
| Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx A Mazurak, R Mroczyński Solid-State Electronics 159, 157-164, 2019 | 3 | 2019 |
| Charging/discharging processes in nanocrystaline MOS structures-Theoretical study D Tanous, A Mazurak, B Majkusiak Journal of Physics: Conference Series 709 (1), 012012, 2016 | 3 | 2016 |
| Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure J Jasiński, A Mazurak, B Majkusiak Microelectronic engineering 109, 1-4, 2013 | 3 | 2013 |
| WKB approximation based formula for tunneling probability through a multi-layer potential barrier A Mazurak, B Majkusiak 2012 15th International Workshop on Computational Electronics, 1-3, 2012 | 3 | 2012 |
| Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures B Majkusiak, A Mazurak Advanced Materials Research 276, 77-85, 2011 | 3 | 2011 |
| Modeling of tunneling through a three-layer gate stack with/without a quantum well A Mazurak, J Walczak, B Majkusiak Journal of Vacuum Science & Technology B 29 (2), 2011 | 3 | 2011 |
| Conductance modulation in Al/SiO2/n-Si MIS resistive switching structures P Wiśniewski, J Jasiński, A Mazurak 2021 Joint International EUROSOI Workshop and International Conference on …, 2021 | 2 | 2021 |
| Determination of border/bulk traps parameters based on (CGV) admittance measurements A Mazurak, B Majkusiak Journal of Vacuum Science & Technology B 37 (3), 2019 | 2 | 2019 |
| Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures A Mazurak, J Jasiński, R Mroczyński physica status solidi (b) 255 (10), 1700634, 2018 | 2 | 2018 |
| Simulations of transient processes and characteristics of the nc-MOS structures D Tanous, A Mazurak, B Majkusiak Microelectronic Engineering 178, 173-177, 2017 | 2 | 2017 |
| Impact of nanocrystal (s) location on CVt and IVt characteristics of ncMOS structures D Tanous, A Mazurak, B Majkusiak Electron Technology Conference 2016 10175, 110-117, 2016 | 2 | 2016 |
| Examination of physical structure of experimental double barrier MOS tunnel diode by comparison with theoretical models AI Mazurak, B Majkusiak, J Grabowski, RB Beck 6th Workshop of the Thematic Network on Silicon-on-Insulator Technology …, 2010 | 2 | 2010 |
| Investigation of the anomalous effect of the AC-signal frequency on flat-band voltage of Al/HfO2/SiO2/Si structures A Mazurak, B Majkusiak Solid-State Electronics 183, 108107, 2021 | 1 | 2021 |
