| Microwave conductivity of very thin graphene and metal films J Krupka, W Strupinski, N Kwietniewski Journal of nanoscience and nanotechnology 11 (4), 3358-3362, 2011 | 43 | 2011 |
| Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC N Kwietniewski, M Sochacki, J Szmidt, M Guziewicz, E Kaminska, ... Applied Surface Science 254 (24), 8106-8110, 2008 | 32 | 2008 |
| Large-area transparent in visible range silicon carbide photodiode M Borecki, A Kociubiński, M Duk, N Kwietniewski, ML Korwin-Pawlowski, ... Photonics Applications in Astronomy, Communications, Industry, and High …, 2013 | 25 | 2013 |
| Measurements of planar metal–dielectric structures using split-post dielectric resonators J Krupka, W Gwarek, N Kwietniewski, JG Hartnett IEEE Transactions on Microwave Theory and Techniques 58 (12), 3511-3518, 2010 | 22 | 2010 |
| Technology and characterization of 4H-SiC pin junctions A Kociubiński, M Duk, M Masłyk, N Kwietniewski, M Sochacki, M Borecki, ... Photonics Applications in Astronomy, Communications, Industry, and High …, 2013 | 17 | 2013 |
| Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing R Mroczyński, N Kwietniewski, M Ćwil, P Hoffmann, RB Beck, ... Vacuum 82 (10), 1013-1019, 2008 | 16 | 2008 |
| Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF4 mixture gas mixing ratio A Werbowy, P Firek, J Chojnowski, A Olszyna, J Szmidt, N Kwietniewski physica status solidi c 4 (4), 1578-1580, 2007 | 16 | 2007 |
| Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structures K Król, M Sochacki, A Taube, N Kwietniewski, S Gierałtowska, ... physica status solidi (a) 215 (13), 1700882, 2018 | 10 | 2018 |
| Electrical properties of isotype and anisotype ZnO/4H-SiC heterojunction diodes A Taube, M Sochacki, N Kwietniewski, A Werbowy, S Gierałtowska, ... Applied Physics Letters 110 (14), 2017 | 10 | 2017 |
| The interplay between damage-and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures K Pągowska, M Kozubal, A Taube, R Kruszka, M Kamiński, ... Materials Science in Semiconductor Processing 127, 105694, 2021 | 9 | 2021 |
| Electronic properties of BaTiO3/4H-SiC interface M Sochacki, P Firek, N Kwietniewski, J Szmidt, W Rzodkiewicz Materials Science and Engineering: B 176 (4), 301-304, 2011 | 9 | 2011 |
| Fabrication and characterization of epitaxial 4H-SiC pn junctions A Kociubinski, M Duk, D Teklinska, N Kwietniewski, M Sochacki, ... Optical Fibers and Their Applications 2014 9228, 25-30, 2014 | 7 | 2014 |
| Effect of sample elevation in radio frequency plasma enhanced chemical vapor deposition (RF PECVD) reactor on optical properties and deposition rate of silicon nitride thin films M Œmietana, R Mroczyński, N Kwietniewski Materials 7 (2), 1249-1260, 2014 | 7 | 2014 |
| Electrical characterization of ZnO/4H‐SiC n–p heterojunction diode N Kwietniewski, M Masłyk, A Werbowy, A Taube, S Gierałtowska, ... physica status solidi (a) 213 (5), 1120-1124, 2016 | 6 | 2016 |
| Properties of silicon nitride thin overlays deposited on optical fibers—Effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactor M Śmietana, M Dominik, M Myśliwiec, N Kwietniewski, P Mikulic, ... Thin Solid Films 603, 8-13, 2016 | 5 | 2016 |
| Reactive impulse plasma ablation deposited barium titanate thin films on silicon A Werbowy, P Firek, N Kwietniewski, A Olszyna Electron Technology Conference 2013 8902, 675-683, 2013 | 5 | 2013 |
| Performance of nanoimprinted and nanocoated optical label-free biosensor-nanocoating properties perspective Z Dziekan, E Pituła, N Kwietniewski, B Stonio, M Janik, T Śmiarowski, ... Optics and Lasers in Engineering 153, 107009, 2022 | 4 | 2022 |
| Oxidation process of SiC by RTP technique N Kwietniewski, K Gołaszewska, TT Piotrowski, W Rzodkiewicz, T Gutt, ... Materials Science Forum 615, 529-532, 2009 | 4 | 2009 |
| Enhancement of lossy mode resonance sensing properties by the introduction of an intermediate low-refractive-index layer D Armas, N Kwietniewski, IR Matías, D Burnat, M Śmietana, I Del Villar Optics Letters 48 (12), 3123-3126, 2023 | 3 | 2023 |
| Application of ZnO to passivate the GaN-based device structures E Kaminska, A Piotrowska, MA di Forte Poisson, S Delage, H Lahreche, ... MRS Online Proceedings Library (OPL) 1035, 1035-L08-08, 2007 | 3 | 2007 |
