Fan Ren
Fan Ren
University of Florida, Bell Lab, AT&T
Zweryfikowany adres z che.ufl.edu - Strona główna
Cytowane przez
Cytowane przez
GaN: Processing, defects, and devices
SJ Pearton, JC Zolper, RJ Shul, F Ren
Journal of applied physics 86 (1), 1-78, 1999
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 011301, 2018
Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
ZnO nanowire growth and devices
YW Heo, DP Norton, LC Tien, Y Kwon, BS Kang, F Ren, SJ Pearton, ...
Materials Science and Engineering: R: Reports 47 (1-2), 1-47, 2004
Hydrogen-selective sensing at room temperature with ZnO nanorods
HT Wang, BS Kang, F Ren, LC Tien, PW Sadik, DP Norton, SJ Pearton, ...
Applied Physics Letters 86 (24), 243503, 2005
Fabrication and performance of GaN electronic devices
SJ Pearton, F Ren, AP Zhang, KP Lee
Materials Science and Engineering: R: Reports 30 (3-6), 55-212, 2000
Site-specific growth of ZnO nanorods using catalysis-driven molecular-beam epitaxy
YW Heo, V Varadarajan, M Kaufman, K Kim, DP Norton, F Ren, ...
Applied physics letters 81 (16), 3046-3048, 2002
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ...
Journal of Physics: Condensed Matter 16 (29), R961, 2004
Perspective—opportunities and future directions for Ga2O3
MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
Depletion-mode nanowire field-effect transistor
YW Heo, LC Tien, Y Kwon, DP Norton, SJ Pearton, BS Kang, F Ren
Applied Physics Letters 85 (12), 2274-2276, 2004
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 220901, 2018
A survey of ohmic contacts to III-V compound semiconductors
AG Baca, F Ren, JC Zolper, RD Briggs, SJ Pearton
Thin Solid Films 308, 599-606, 1997
Recent advances in wide bandgap semiconductor biological and gas sensors
SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
Effect of temperature on metal–oxide–semiconductor field-effect transistors
F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik
Applied Physics Letters 55 (17), 1750-1752, 1989
GaN electronics
SJ Pearton, F Ren
Advanced Materials 12 (21), 1571-1580, 2000
Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO
K Ip, ME Overberg, YW Heo, DP Norton, SJ Pearton, CE Stutz, B Luo, ...
Applied physics letters 82 (3), 385-387, 2003
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
Electrical effects of plasma damage in
XA Cao, SJ Pearton, AP Zhang, GT Dang, F Ren, RJ Shul, L Zhang, ...
Applied physics letters 75 (17), 2569-2571, 1999
Nie można teraz wykonać tej operacji. Spróbuj ponownie później.
Prace 1–20