Jacek R±bkowski
Jacek R±bkowski
Verified email at ee.pw.edu.pl
TitleCited byYear
Silicon carbide power transistors: A new era in power electronics is initiated
J Rabkowski, D Peftitsis, HP Nee
IEEE Industrial Electronics Magazine 6 (2), 17-26, 2012
2632012
High-power modular multilevel converters with SiC JFETs
D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ...
IEEE Transactions on Power Electronics 27 (1), 28-36, 2011
1832011
Challenges regarding parallel connection of SiC JFETs
D Peftitsis, R Baburske, J Rabkowski, J Lutz, G Tolstoy, HP Nee
IEEE Transactions on Power Electronics 28 (3), 1449-1463, 2012
922012
Low-loss high-performance base-drive unit for SiC BJTs
J Rabkowski, G Tolstoy, D Peftitsis, HP Nee
IEEE Transactions on Power Electronics 27 (5), 2633-2643, 2011
892011
Short-circuit protection circuits for silicon-carbide power transistors
DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ...
IEEE transactions on industrial electronics 63 (4), 1995-2004, 2015
732015
Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs
DP Sadik, J Colmenares, D Peftitsis, JK Lim, J Rabkowski, HP Nee
2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013
652013
Gate and base drivers for silicon carbide power transistors: An overview
D Peftitsis, J Rabkowski
IEEE Transactions on Power Electronics 31 (10), 7194-7213, 2015
572015
Parallel-operation of discrete SiC BJTs in a 6-kW/250-kHz DC/DC boost converter
J Rabkowski, D Peftitsis, HP Nee
IEEE transactions on power electronics 29 (5), 2482-2491, 2013
532013
Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%
J Rabkowski, D Peftitsis, HP Nee
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012
472012
Design steps toward a 40-kVA SiC JFET inverter with natural-convection cooling and an efficiency exceeding 99.5%
J Rabkowski, D Peftitsis, HP Nee
IEEE Transactions on Industry Applications 49 (4), 1589-1598, 2013
452013
Pulse width modulation methods for bidirectional/high-performance Z-source inverter
J Rabkowski, R Barlik, M Nowak
2008 IEEE Power Electronics Specialists Conference, 2750-2756, 2008
422008
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee
IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015
382015
Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply
D Peftitsis, J Rabkowski, HP Nee
IEEE transactions on power electronics 28 (3), 1488-1501, 2012
382012
On the design process of a 6-kva quasi-z-inverter employing sic power devices
M Zdanowski, D Peftitsis, S Piasecki, J Rabkowski
IEEE Transactions on Power Electronics 31 (11), 7499-7508, 2016
332016
A discretized proportional base driver for silicon carbide bipolar junction transistors
G Tolstoy, D Peftitsis, J Rabkowski, PR Palmer, HP Nee
IEEE transactions on power electronics 29 (5), 2408-2417, 2013
312013
Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors
D Peftitsis, J Rabkowski, G Tolstoy, HP Nee
Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011
302011
Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs
JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee
IEEE transactions on power electronics 29 (5), 2180-2191, 2013
282013
A simple high-performance low-loss current-source driver for SiC bipolar transistors
J Rabkowski, D Peftitsis, HP Nee, M Zdanowski
Proceedings of The 7th International Power Electronics and Motion Control …, 2012
282012
Dual-function gate driver for a power module with SiC junction field-effect transistors
J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, HP Nee
IEEE transactions on power electronics 29 (5), 2367-2379, 2013
262013
A 6kW, 200kHz boost converter with parallel-connected SiC bipolar transistors
J Rabkowski, D Peftitsis, M Zdanowski, HP Nee
2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and …, 2013
252013
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