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Yong Cheol Shin
Yong Cheol Shin
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Zweryfikowany adres z mit.edu
Tytuł
Cytowane przez
Cytowane przez
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Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ...
Nano letters 14 (6), 3055-3063, 2014
5832014
Anode-interface localized filamentary mechanism in resistive switching of thin films
KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang
Applied physics letters 91 (1), 012907, 2007
4832007
Study on the resistive switching time of thin films
BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ...
Applied physics letters 89 (1), 012906, 2006
1422006
Cyclic PECVD of Ge2Sb2Te5 films using metallorganic sources
BJ Choi, S Choi, YC Shin, CS Hwang, JW Lee, J Jeong, YJ Kim, ...
Journal of the electrochemical society 154 (4), H318, 2007
962007
Schottky-type diode switch for the resistive switching memory array
YC Shin, J Song, KM Kim, BJ Choi, S Choi, HJ Lee, GH Kim, T Eom, ...
Applied Physics Letters 92 (16), 162904, 2008
942008
Combined atomic layer and chemical vapor deposition, and selective growth of Ge2Sb2Te5 films on TiN/W contact plug
BJ Choi, S Choi, YC Shin, KM Kim, CS Hwang, YJ Kim, YJ Son, SK Hong
Chemistry of Materials 19 (18), 4387-4389, 2007
672007
Large-area 2-D electronics: materials, technology, and devices
A Hsu, H Wang, YC Shin, B Mailly, X Zhang, L Yu, Y Shi, YH Lee, ...
Proceedings of the IEEE 101 (7), 1638-1652, 2013
552013
Hydrogen-excluded graphene synthesis via atmospheric pressure chemical vapor deposition
YC Shin, J Kong
Carbon 59, 439-447, 2013
532013
Switching power reduction in phase change memory cell using CVD Ge2Sb2Te5 and ultrathin TiO2 films
BJ Choi, SH Oh, S Choi, T Eom, YC Shin, KM Kim, KW Yi, CS Hwang, ...
Journal of the electrochemical society 156 (1), H59, 2008
322008
A facile tool for the characterization of two-dimensional materials grown by chemical vapor deposition
M Hofmann, YC Shin, YP Hsieh, MS Dresselhaus, J Kong
Nano Research 5 (7), 504-511, 2012
282012
Influence of high temperature postdeposition annealing on the atomic configuration in amorphous In–Ga–Zn–O films
DY Cho, J Song, YC Shin, CS Hwang, WS Choi, JK Jeong
Electrochemical and Solid-State Letters 12 (6), H208, 2009
242009
Bias polarity dependent local electrical conduction in resistive switching TiO2 thin films
YC Shin, MH Lee, KM Kim, GH Kim, SJ Song, JY Seok, CS Hwang
physica status solidi (RRL)–Rapid Research Letters 4 (5‐6), 112-114, 2010
192010
A tungsten interlayer process for fabrication of through-pore AAO scaffolds on gold substrates
J Oh, YC Shin, CV Thompson
Journal of The Electrochemical Society 158 (1), K11, 2010
82010
Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe
P Zhou, YC Shin, BJ Choi, S Choi, CS Hwang, YY Lin, HB Lv, XJ Yan, ...
Electrochemical and solid-state letters 10 (9), H281, 2007
22007
Combined piezo-force microscopy and conductive atomic-force microscopy for investigating leakage current conduction and local domain structure of PbTiO3 thin …
HJ Lee, K Lee, YC Shin, GH Kim, CS Hwang, JW Hong
2007 Sixteenth IEEE International Symposium on the Applications of …, 2007
2007
Influence of substrates on the growth of Ge2Sb2Te5 films by combined atomic-layer-and chemical-vapor-deposition
BJ Choi, S Choi, YC Shin, KM Kim, CS Hwang, YJ Kim, YJ Son, SK Hong
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Prace 1–16