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Robert Mroczyński
Tytuł
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Characterization of dielectric layers grown at low temperature by atomic layer deposition
S Gieraltowska, L Wachnicki, BS Witkowski, R Mroczynski, P Dluzewski, ...
Thin Solid Films 577, 97-102, 2015
412015
Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films
M Szymańska, S Gierałtowska, Ł Wachnicki, M Grobelny, K Makowska, ...
Applied Surface Science 301, 28-33, 2014
332014
Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks
A Taube, R Mroczyński, K Korwin-Mikke, S Gierałtowska, J Szmidt, ...
Materials Science and Engineering: B 177 (15), 1281-1285, 2012
202012
Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices
R Mroczyński, A Taube, S Gierałtowska, E Guziewicz, M Godlewski
Applied surface science 258 (21), 8366-8370, 2012
202012
Effect of annealing on optical, mechanical, electrical properties and structure of scandium oxide films
A Belosludtsev, Y Yakimov, R Mroczyński, S Stanionytė, M Skapas, ...
physica status solidi (a) 216 (18), 1900122, 2019
162019
450 nm (Al, In) GaN optical amplifier with double ‘j-shape’waveguide for master oscillator power amplifier systems
S Stanczyk, A Kafar, S Grzanka, M Sarzynski, R Mroczynski, S Najda, ...
Optics Express 26 (6), 7351-7357, 2018
162018
Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing
R Mroczyński, N Kwietniewski, M Ćwil, P Hoffmann, RB Beck, ...
Vacuum 82 (10), 1013-1019, 2008
162008
Optimization of ultra-thin pulsed-DC magnetron sputtered aluminum films for the technology of hyperbolic metamaterials
R Mroczyński, D Iwanicki, B Fetliński, M Ożga, M Świniarski, A Gertych, ...
Crystals 10 (5), 384, 2020
122020
Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications
R Mroczyński, RB Beck
Microelectronics Reliability 52 (1), 107-111, 2012
122012
Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices
R Mroczyński, RB Beck
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
122009
Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices
R Mroczyński, M Szymańska, W Głuszewski
Journal of Vacuum Science & Technology B 33 (1), 2015
112015
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices
R Mroczyński, M Ożga, M Godlewski, BS Witkowski
Solid-State Electronics 194, 108357, 2022
102022
Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers
A Mazurak, R Mroczyński, J Jasiński, D Tanous, B Majkusiak, S Kano, ...
Microelectronic Engineering 178, 298-303, 2017
102017
Refractive index of heavily germanium-doped gallium nitride measured by spectral reflectometry and ellipsometry
D Schiavon, R Mroczyński, A Kafar, G Kamler, I Levchenko, S Najda, ...
Materials 14 (23), 7364, 2021
92021
Silicon-Carbide (SiC) nanocrystal technology and characterization and its applications in memory structures
A Mazurak, R Mroczyński, D Beke, A Gali
Nanomaterials 10 (12), 2387, 2020
82020
Silicon oxynitride layers fabricated by plasma enhanced chemical vapor deposition (PECVD) for CMOS devices
R Mroczyński, R Beck
ECS Transactions 25 (8), 797, 2009
82009
Investigations of structural and electrical properties of ALD films formed with the ozone precursor
A Seweryn, K Lawniczak-Jablonska, P Kuzmiuk, S Gieraltowska, ...
Materials 14 (18), 5395, 2021
72021
Effect of sample elevation in radio frequency plasma enhanced chemical vapor deposition (RF PECVD) reactor on optical properties and deposition rate of silicon nitride thin films
M Œmietana, R Mroczyński, N Kwietniewski
Materials 7 (2), 1249-1260, 2014
72014
Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices
M Puźniak, W Gajewski, M Żelechowski, J Jamroz, A Gertych, M Zdrojek, ...
Microelectronic Engineering 228, 111332, 2020
62020
Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures
J Jasiński, A Mazurak, R Mroczyński, B Majkusiak
Microelectronic Engineering 147, 349-353, 2015
62015
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