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liwen sang
liwen sang
Zweryfikowany adres z nims.go.jp
Tytuł
Cytowane przez
Cytowane przez
Rok
A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures
L Sang, M Liao, M Sumiya
Sensors 13 (8), 10482-10518, 2013
8052013
High Detectivity Solar‐Blind High‐Temperature Deep‐Ultraviolet Photodetector Based on Multi‐Layered (l00) Facet‐Oriented β‐Ga2O3 Nanobelts
R Zou, Z Zhang, Q Liu, J Hu, L Sang, M Liao, W Zhang
Small 10 (9), 1848-1856, 2014
2022014
Electrochemical-coupling layer-by-layer (ECC–LbL) assembly
M Li, S Ishihara, M Akada, M Liao, L Sang, JP Hill, V Krishnan, Y Ma, ...
Journal of the American Chemical Society 133 (19), 7348-7351, 2011
1552011
New UV‐A photodetector based on individual potassium niobate nanowires with high performance
H Liu, Z Zhang, L Hu, N Gao, L Sang, M Liao, R Ma, F Xu, X Fang
Advanced Optical Materials 2 (8), 771-778, 2014
1082014
Comprehensive investigation of single crystal diamond deep-ultraviolet detectors
M Liao, L Sang, T Teraji, M Imura, J Alvarez, Y Koide
Japanese Journal of Applied Physics 51 (9R), 090115, 2012
1082012
Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes
YQ Bie, ZM Liao, PW Wang, YB Zhou, XB Han, Y Ye, Q Zhao, XS Wu, ...
Adv. Mater 22 (38), 4284-4287, 2010
862010
Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer
L Sang, M Liao, N Ikeda, Y Koide, M Sumiya
Applied Physics Letters 99 (16), 2011
852011
High-temperature ultraviolet detection based on InGaN Schottky photodiodes
L Sang, M Liao, Y Koide, M Sumiya
Applied Physics Letters 99 (3), 2011
762011
An Interface Engineered Multicolor Photodetector Based on n‐Si(111)/TiO2 Nanorod Array Heterojunction
T Ji, Q Liu, R Zou, Y Sun, K Xu, L Sang, M Liao, Y Koide, L Yu, J Hu
Advanced Functional Materials 26 (9), 1400-1410, 2016
712016
High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator
L Sang, M Liao, Y Koide, M Sumiya
Applied Physics Letters 98 (10), 2011
652011
Enhanced UV-visible light photodetectors with a TiO 2/Si heterojunction using band engineering
T Ji, Q Liu, R Zou, Y Zhang, L Wang, L Sang, M Liao, J Hu
Journal of Materials Chemistry C 5 (48), 12848-12856, 2017
642017
Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes
L Sang, B Ren, M Sumiya, M Liao, Y Koide, A Tanaka, Y Cho, Y Harada, ...
Applied physics letters 111 (12), 2017
602017
Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer
LW Sang, ZX Qin, H Fang, T Dai, ZJ Yang, B Shen, GY Zhang, XP Zhang, ...
Applied Physics Letters 93 (12), 2008
572008
Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
S Cheng, L Sang, M Liao, J Liu, M Imura, H Li, Y Koide
Applied Physics Letters 101 (23), 2012
542012
Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices
L Sang
Functional Diamond 1 (1), 174-188, 2022
512022
Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance
B Ren, M Liao, M Sumiya, L Wang, Y Koide, L Sang
Applied Physics Express 10 (5), 051001, 2017
492017
A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure
L Sang, M Liao, Q Liang, M Takeguchi, B Dierre, B Shen, T Sekiguchi, ...
Advanced materials (Deerfield Beach, Fla.) 26 (9), 1414-1420, 2014
492014
Superior electrocatalytic activity of mesoporous Au film templated from diblock copolymer micelles
C Li, B Jiang, H Chen, M Imura, L Sang, V Malgras, Y Bando, T Ahamad, ...
Nano Research 9, 1752-1762, 2016
472016
P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
K Zhang, M Sumiya, M Liao, Y Koide, L Sang
Scientific reports 6 (1), 23683, 2016
472016
Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing
ST Liu, XQ Wang, G Chen, YW Zhang, L Feng, CC Huang, FJ Xu, N Tang, ...
Journal of Applied Physics 110 (11), 2011
472011
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