Novel synaptic memory device for neuromorphic computing S Mandal, A El-Amin, K Alexander, B Rajendran, R Jha
Scientific reports 4 (1), 5333, 2014
116 2014 Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury
IEEE Transactions on Electron Devices 64 (3), 805-808, 2016
94 2016 Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layer S Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ...
IEEE Electron Device Letters 38 (7), 933-936, 2017
52 2017 Switching dynamics and charge transport studies of resistive random access memory devices B Long, Y Li, S Mandal, R Jha, K Leedy
Applied Physics Letters 101 (11), 2012
43 2012 Effects of Mg-Doping on -Based ReRAM Device Switching Characteristics BM Long, S Mandal, J Livecchi, R Jha
IEEE electron device letters 34 (10), 1247-1249, 2013
35 2013 Demonstration of GaN static induction transistor (SIT) using self-aligned process W Li, D Ji, R Tanaka, S Mandal, M Laurent, S Chowdhury
IEEE Journal of the Electron Devices Society 5 (6), 485-490, 2017
34 2017 A demonstration of nitrogen polar gallium nitride current aperture vertical electron transistor S Rajabi, S Mandal, B Ercan, H Li, MA Laurent, S Keller, S Chowdhury
IEEE Electron Device Letters 40 (6), 885-888, 2019
19 2019 Observation and discussion of avalanche electroluminescence in GaN pn diodes offering a breakdown electric field of 3 MV cm− 1 S Mandal, MB Kanathila, CD Pynn, W Li, J Gao, T Margalith, MA Laurent, ...
Semiconductor Science and Technology 33 (6), 065013, 2018
19 2018 Study of synaptic behavior in doped transition metal oxide-based reconfigurable devices S Mandal, B Long, R Jha
IEEE transactions on electron devices 60 (12), 4219-4225, 2013
16 2013 Determination of minority carrier lifetime of holes in diamond pin diodes using reverse recovery method M Dutta, S Mandal, R Hathwar, AM Fischer, FAM Koeck, RJ Nemanich, ...
IEEE Electron Device Letters 39 (4), 552-555, 2018
15 2018 Discrete-pulsed current time method to estimate channel thermal resistance of GaN-based power devices Z Xu, S Mandal, J Gao, H Surdi, W Li, Y Yamaoka, G Piao, T Tabuchi, H Li, ...
IEEE Transactions on Electron Devices 65 (12), 5301-5306, 2018
11 2018 Al2 O3 Insertion Layer for Improved PEALD SiO2 /(Al)GaN Interfaces J Gao, M Hao, W Li, Z Xu, S Mandal, R Nemanich, S Chowdhury
physica status solidi (a) 215 (5), 1700498, 2018
9 2018 Doped HfO2 based nanoelectronic memristive devices for self-learning neural circuits and architecture S Mandal, B Long, A El-Amin, R Jha
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013
7 2013 Understanding the impact of diode parameters on sneak current in 1Diode 1ReRAM crossbar architectures Y Li, B Long, S Mandal, W Chen, R Jha
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013
6 2013 A study of the effect of surface pretreatment on atomic layer deposited Al2O3 interface with GaN J Gao, W Li, S Mandal, S Chowdhury
Wide Bandgap Power Devices and Applications II 10381, 1038103, 2017
3 2017 Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs KM Bhat, S Mandal, S Pathak, GS Saravanan, C Sridhar, SL Badnikar, ...
Semiconductor Science and Technology 27 (11), 115013, 2012
2 2012 Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer S Mandal, A Agarwal, E Ahmadi, KM Bhat, MA Laurent, S Keller, ...
Wide Bandgap Power Devices and Applications II 10381, 39-45, 2017
1 2017 Nanoelectronic synaptic devices and materials for brain-inspired computational architectures R Jha, S Mandal
Nanoepitaxy: Materials and Devices VI 9174, 55-58, 2014
1 2014 Understanding the impact of slow electro-forming in Resistive Random Access Memories B Long, S Mandal, R Jha, A Pronin, PJ Hulbert
2013 IEEE 56th International Midwest Symposium on Circuits and Systems …, 2013
1 2013 Understanding the Role of Dopants in Transition Metal Oxide Dielectrics for Digital and Analog Resistive Switching B Long, S Mandal, Y Li, W Chen, A El-Amin, R Jha
ECS Transactions 53 (4), 115, 2013
1 2013