Physical mechanisms of endurance degradation in TMO-RRAM B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ...
Electron Devices Meeting (IEDM), 2011 IEEE International, 12.3. 1-12.3. 4, 2011
173 2011 An electronic silicon-based memristor with a high switching uniformity Y Lu, A Alvarez, CH Kao, JS Bow, SY Chen, IW Chen
Nature Electronics 2 (2), 66-74, 2019
62 2019 A physical based analytic model of RRAM operation for circuit simulation P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ...
2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012
60 2012 A simplified model for resistive switching of oxide-based resistive random access memory devices Y Lu, B Gao, Y Fu, B Chen, L Liu, X Liu, J Kang
Electron Device Letters, IEEE 33 (3), 306-308, 2012
41 2012 Scalability of voltage-controlled filamentary and nanometallic resistance memory devices Y Lu, JH Lee, IW Chen
Nanoscale 9 (34), 12690-12697, 2017
36 2017 Nanofilament Dynamics in Resistance Memory: Model and Validation Y Lu, JH Lee, IW Chen
ACS nano 9 (7), 7649-7660, 2015
27 2015 Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect Y Lu, B Chen, B Gao, Z Fang, YH Fu, JQ Yang, LF Liu, XY Liu, HY Yu, ...
2012 IEEE International Reliability Physics Symposium (IRPS), MY. 4.1-MY. 4.4, 2012
22 2012 Purely electronic nanometallic resistance switching random-access memory Y Lu, JH Yoon, Y Dong, IW Chen
MRS Bulletin 43 (5), 358-364, 2018
17 2018 Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test Y Lu, JH Lee, X Yang, IW Chen
Nanoscale 8 (42), 18113-18120, 2016
11 2016 Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory X Yang, Y Lu, J Lee, IW Chen
Applied Physics Letters 108 (1), 013506, 2016
10 2016 Probing material conductivity in two-terminal devices by resistance difference Y Lu, IW Chen
Applied Physics Letters 111 (8), 083501, 2017
4 2017 Quantum Electronic Interference in Nano Amorphous Silicon and Other Thin Film Resistance Memory Y Lu
University of Pennsylvania, 2017
3 2017 Scaling behavior of pcm cells in off-state conduction J Chen, RGD Jeyasingh, B Gao, Y Lu, YX Deng, XY Liu, JF Kang, ...
Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012
3 2012 Non-volatile resistance switching devices IW Chen, Y Lu
US Patent App. 15/312,196, 2017
2 2017 Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures Y Lu, IW Chen
arXiv preprint arXiv:1703.02203, 2017
2 2017 Pressure-Induced Insulator-to-Metal Transition Provides Evidence for Negative- Y Lu, IW Chen
arXiv preprint arXiv:1703.02003, 2017
2 2017 Mechanical forming of resistive memory devices IW Chen, Y Lu
US Patent 10,224,481, 2019
1 2019 Purely electronic nanometallic ReRAM Y Lu, JH Yoon, Y Dong, IW Chen
arXiv preprint arXiv:1804.03302, 2018
1 2018 Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method Y Lu, IW Chen
arXiv preprint arXiv:1610.07666, 2016
1 2016 Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method Y Lu, IW Chen
arXiv preprint arXiv:1610.07666, 2016
1 2016 