Analysis of molecular‐beam epitaxial growth of InAs on GaAs (100) by reflection anisotropy spectroscopy SM Scholz, AB Müller, W Richter, DRT Zahn, DI Westwood, DA Woolf, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
91 1992 Surface reconstructions of GaAs (111) A and (111) B: A static surface phase study by reflection high‐energy electron diffraction DA Woolf, DI Westwood, RH Williams
Applied physics letters 62 (12), 1370-1372, 1993
80 1993 Growth of InxGa1− xAs on GaAs (001) by molecular beam epitaxy DI Westwood, DA Woolf, RH Williams
Journal of crystal growth 98 (4), 782-792, 1989
76 1989 Comparison of the (2× 2) reconstructions of GaAs {111} surfaces JMC Thornton, P Weightman, DA Woolf, CJ Dunscombe
Physical Review B 51 (20), 14459, 1995
62 1995 The homoepitaxial growth of GaAs (111) A and (111) B by molecular beam epitaxy: an investigation of the temperature-dependent surface reconstructions and bulk electrical … DA Woolf, DI Westwood, RH Williams
Semiconductor science and technology 8 (6), 1075, 1993
53 1993 On the Richardson constant of intimate metal-GaAs Schottky barriers M Missous, EH Rhoderick, DA Woolf, SP Wilkes
Semiconductor science and technology 7 (2), 218, 1992
51 1992 Charge transfer across the As/Si (100)-2× 1 interface JA Evans, AD Laine, P Weightman, JAD Matthew, DA Woolf, DI Westwood, ...
Physical Review B 46 (3), 1513, 1992
49 1992 The molecular beam epitaxial growth of GaAs/GaAs (111) B: doping and growth temperature studies DA Woolf, Z Sobiesierski, DI Westwood, RH Williams
Journal of applied physics 71 (10), 4908-4915, 1992
49 1992 Adsorbed and substituted Sb dimers on GaAs (001) P Moriarty, PH Beton, YR Ma, M Henini, DA Woolf
Physical Review B 53 (24), R16148, 1996
47 1996 Optical second harmonic generation from Si (111) 1× 1-As and Si (100) 2× 1-As PV Kelly, ZR Tang, DA Woolf, RH Williams, JF McGilp
Surface science 251, 87-91, 1991
46 1991 The molecular beam epitaxial growth of InAs on GaAs (111) B-and (100)-oriented substrates: a comparative growth study SE Hooper, DI Westwood, DA Woolf, SS Heghoyan, RH Williams
Semiconductor science and technology 8 (6), 1069, 1993
45 1993 Ballistic electron emission microscopy studies of Au–CdTe and Au–GaAs interfaces and band structure AE Fowell, RH Williams, BE Richardson, AA Cafolla, DI Westwood, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
45 1991 Reconstructions of the GaAs (111) B surface JMC Thornton, DA Woolf, P Weightman
Applied surface science 123, 115-119, 1998
39 1998 Existence of Ga-vacancy and as-trimer induced (2× 2) phases on the GaAs (111) A surface JMC Thornton, P Unsworth, MD Jackson, P Weightman, DA Woolf
Surface science 316 (3), 231-237, 1994
38 1994 Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface Z Sobiesierski, DI Westwood, DA Woolf, T Fukui, H Hasegawa
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
38 1993 Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs (001) by molecular-beam epitaxy DA Woolf, KC Rose, J Rumberg, DI Westwood, F Reinhardt, SJ Morris, ...
Physical Review B 51 (7), 4691, 1995
31 1995 Residual strain measurements in thick layers grown on GaAs (100) by molecular beam epitaxy DI Westwood, DA Woolf
Journal of applied physics 73 (3), 1187-1192, 1993
30 1993 Optical monitoring of the development of InAs quantum dots on GaAs (001) by reflectance anisotropy spectroscopy E Steimetz, JT Zettler, W Richter, DI Westwood, DA Woolf, Z Sobiesierski
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
29 1996 Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering U Rossow, U Frotscher, N Esser, U Resch, T Müller, W Richter, DA Woolf, ...
Applied surface science 63 (1-4), 35-39, 1993
29 1993 Vibrational properties of arsenic on Si (111) H Wilhelm, W Richter, U Rossow, D Zahn, DA Woolf, DI Westwood, ...
Surface science 251, 556-560, 1991
27 1991