Jinfeng Kang
Jinfeng Kang
北京大学微纳电子研究院教授
Zweryfikowany adres z pku.edu.cn
Tytuł
Cytowane przez
Cytowane przez
Rok
A low energy oxide‐based electronic synaptic device for neuromorphic visual systems with tolerance to device variation
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Advanced Materials 25 (12), 1774-1779, 2013
4252013
Characteristics and mechanism of conduction/set process in resistance switching random-access memories
N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu
Applied Physics Letters 92 (23), 232112, 2008
4112008
HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
S Yu, HY Chen, B Gao, J Kang, HSP Wong
ACS nano 7 (3), 2320-2325, 2013
3122013
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
3012019
Optoelectronic resistive random access memory for neuromorphic vision sensors
F Zhou, Z Zhou, J Chen, TH Choy, J Wang, N Zhang, Z Lin, S Yu, J Kang, ...
Nature nanotechnology 14 (8), 776-782, 2019
2832019
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong
2012 International Electron Devices Meeting, 20.7. 1-20.7. 4, 2012
2822012
Gd-doping effect on performance of based resistive switching memory devices using implantation approach
H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu
Applied Physics Letters 98 (4), 042105, 2011
2102011
Unified physical model of bipolar oxide-based resistive switching memory
B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu
IEEE Electron Device Letters 30 (12), 1326-1328, 2009
1932009
A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
2012 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2012
1902012
Ionic doping effect in resistive switching memory
H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ...
Applied Physics Letters 96 (12), 123502, 2010
1802010
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
M Lanza, K Zhang, M Porti, M Nafría, ZY Shen, LF Liu, JF Kang, D Gilmer, ...
Applied Physics Letters 100 (12), 123508, 2012
1772012
RRAM crossbar array with cell selection device: A device and circuit interaction study
Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ...
IEEE transactions on Electron Devices 60 (2), 719-726, 2012
1622012
Fermi pinning-induced thermal instability of metal-gate work functions
HY Yu, C Ren, YC Yeo, JF Kang, XP Wang, HHH Ma, MF Li, DSH Chan, ...
IEEE Electron Device Letters 25 (5), 337-339, 2004
1612004
Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems
B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ...
ACS nano 8 (7), 6998-7004, 2014
1582014
Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology
B Gao, HW Zhang, S Yu, B Sun, LF Liu, XY Liu, Y Wang, RQ Han, ...
2009 Symposium on VLSI Technology, 30-31, 2009
1582009
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE transactions on electron devices 60 (12), 4090-4097, 2013
1542013
Oxide-based RRAM switching mechanism: A new ion-transport-recombination model
B Gao, S Yu, N Xu, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1532008
Stochastic learning in oxide binary synaptic device for neuromorphic computing
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Frontiers in neuroscience 7, 186, 2013
1502013
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ...
Semiconductor science and technology 23 (7), 075019, 2008
1402008
Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies
C Li, B Gao, Y Yao, X Guan, X Shen, Y Wang, P Huang, L Liu, X Liu, J Li, ...
Advanced Materials 29 (10), 1602976, 2017
1392017
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