| A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs A Anjum, NH Vinayakprasanna, TM Pradeep, N Pushpa, JBM Krishna, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 13 | 2016 |
| Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors MN Bharathi, VN Hegde, A Anjum, TM Pradeep, N Pushpa, KC Praveen, ... Radiation Effects and Defects in Solids 172 (3-4), 235-249, 2017 | 9 | 2017 |
| Analysis of 80-MeV carbon and 80-MeV nitrogen ion irradiation effects on n-channel MOSFETs A Anjum, TM Pradeep, NH Vinayakprasanna, N Pushpa, A Tripathi, ... IEEE Transactions on Device and Materials Reliability 19 (4), 696-703, 2019 | 3 | 2019 |
| Radiation tolerance and defect dynamics of ALD-grown HfTiOx-based MOS capacitors R Sai Prasad Goud, M Akkanaboina, A Anjum, K Ravi Kumar, ... Radiation Effects and Defects in Solids 178 (1-2), 83-93, 2023 | 1 | 2023 |
| New Aspects of Femtosecond Laser Ablation of Si in Water: A Material Perspective KR Kumar, D Banerjee, A Mangababu, RS Prasad Goud, A Anjum, GP AP, ... Journal of Physics: Condensed Matter, 2024 | | 2024 |
| An investigation of 80 MeV nitrogen ion irradiation on silicon NPN transistors TM Pradeep, NH Vinayakprasanna, BC Hemaraju, KC Praveen, A Anjum, ... AIP Conference Proceedings 1832 (1), 2017 | | 2017 |
Dr. Vinayakprasanna N HegdeAssistant ProfessorVerified email at vvce.ac.in
