Benyahia Djalal
Benyahia Djalal
PhD
Zweryfikowany adres z wat.edu.pl - Strona główna
Tytuł
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Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Opto-Electronics Review 24 (1), 40-45, 2016
142016
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Optical and Quantum Electronics 48 (9), 428, 2016
132016
Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition
P Martyniuk, D Benyahia, A Kowalewski, Ł Kubiszyn, D Stępień, ...
Solid-State Electronics 119, 1-4, 2016
132016
Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
K Michalczewski, P Martyniuk, CH Wu, J Jureńczyk, K Grodecki, ...
Infrared Physics & Technology 95, 222-226, 2018
112018
Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Electronic Materials 47 (1), 299-304, 2018
102018
Electrical properties of midwave and longwave InAs/GaSb superlattices grown on GaAs substrates by molecular beam epitaxy
D Benyahia, K Michalczewski, J Boguski, A Kębłowski, P Martyniuk, ...
Nanoscale research letters 13 (1), 196, 2018
92018
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Crystal Growth 483, 26-30, 2018
92018
Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Semiconductors 39 (3), 033003, 2018
82018
Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique.
K Michalczewski, F Ivaldi, Ł Kubiszyn, D Benyahia, J Boguski, ...
Acta Physica Polonica, A. 132 (2), 2017
52017
nBn HgCdTe infrared detector with HgTe (HgCdTe)/CdTe SLs barrier
D Benyahia, P Martyniuk, M Kopytko, J Antoszewski, W Gawron, ...
Optical and Quantum Electronics 48 (3), 215, 2016
52016
Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates.
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
Acta Physica Polonica, A. 132 (2), 2017
42017
New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates
A Kowalewski, P Martyniuk, O Markowska, D Benyahia, W Gawron
Materials Science in Semiconductor Processing 41, 261-264, 2016
42016
P-type doping of GaSb by beryllium grown on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 16 (5), 695-701, 2016
32016
X-ray and Raman determination of InAsSb mole fraction for x< 0.5
K Murawski, K Grodecki, D Benyahia, A Wysmolek, B Jankiewicz, ...
Journal of Crystal Growth 498, 137-139, 2018
22018
Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate
J Wróbel, K Grodecki, D Benyahia, K Murawski, K Michalczewski, ...
13th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2018
22018
Heavily Si-doped InAs photoluminescence measurements
K Grodecki, K Murawski, A Henig, K Michalczewski, D Benyahia, ...
Materials Science-Poland 35 (3), 647-650, 2017
22017
Demonstration of mid-wave type-II superlattice InAs/GaSb single pixel barrier detector with GaAs immersion lens
P Martyniuk, W Gawron, D Stępień, D Benyahia, A Kowalewski, ...
IEEE Electron Device Letters 37 (1), 64-66, 2015
22015
High operating temperature LWIR and VLWIR InAs1− xSbx optically immersed photodetectors grown on GaAs substrates
K Michalczewski, D Benyahia, J Jureńczyk, D Stępień, A Kębłowski, ...
Infrared Physics & Technology 97, 116-122, 2019
12019
Molecular beam epitaxy growth and characterization of interband cascade infrared detectors on GaAs substrates
D Benyahia, K Michalczewski, K Hackiewicz, A Kębłowski, P Martyniuk, ...
Journal of Crystal Growth 534, 125512, 2020
2020
Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates
D Benyahia, K Michalczewski, A Kębłowski, K Grodecki, P Martyniuk
Journal of Crystal Growth 522, 125-127, 2019
2019
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