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Benyahia Djalal
Benyahia Djalal
PhD
Zweryfikowany adres z wat.edu.pl - Strona główna
Tytuł
Cytowane przez
Cytowane przez
Rok
Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
K Michalczewski, P Martyniuk, CH Wu, J Jureńczyk, K Grodecki, ...
Infrared Physics & Technology 95, 222-226, 2018
252018
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
Optical and Quantum Electronics 48 (9), 1-7, 2016
182016
Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition
P Martyniuk, D Benyahia, A Kowalewski, Ł Kubiszyn, D Stępień, ...
Solid-State Electronics 119, 1-4, 2016
172016
Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Opto-Electronics Review 24 (1), 40-45, 2016
172016
Electrical properties of midwave and longwave InAs/GaSb superlattices grown on GaAs substrates by molecular beam epitaxy
D Benyahia, Ł Kubiszyn, K Michalczewski, J Boguski, A Kębłowski, ...
Nanoscale Research Letters 13 (1), 1-7, 2018
162018
Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
Journal of Electronic Materials 47 (1), 299-304, 2018
162018
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Crystal Growth 483, 26-30, 2018
132018
Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Semiconductors 39 (3), 033003, 2018
102018
Studies of dark current reduction in InAsSb mid-wave infrared HOT detectors through Two step passivation technique
K Michalczewski, F Ivaldi, ŁP Kubiszyn, D Benyahia, J Boguski, ...
Acta Physica Polonica A 132 (2), 2017
82017
p-type doping of GaSb by beryllium grown on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, L Kubiszyn, K Michalczewski, A Keblwski, P Martyniuk, ...
JSTS: Journal of Semiconductor Technology and Science 16 (5), 695-701, 2016
72016
nBn HgCdTe infrared detector with HgTe (HgCdTe)/CdTe SLs barrier
D Benyahia, P Martyniuk, M Kopytko, J Antoszewski, W Gawron, ...
Optical and Quantum Electronics 48 (3), 1-8, 2016
62016
New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates
A Kowalewski, P Martyniuk, O Markowska, D Benyahia, W Gawron
Materials Science in Semiconductor Processing 41, 261-264, 2016
62016
Demonstration of mid-wave type-II superlattice InAs/GaSb single pixel barrier detector with GaAs immersion lens
P Martyniuk, W Gawron, D Stępień, D Benyahia, A Kowalewski, ...
IEEE Electron Device Letters 37 (1), 64-66, 2015
52015
Long term stability study of InAsSb mid-wave infrared HOT detectors passivated through two step passivation technique
K Michalczewski, F Ivaldi, D Benyahia, J Ciosek, J Boguski, A Kębłowski, ...
13th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2018
42018
Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates
D Benyahia, ŁP Kubiszyn, K Michalczewski, A Kębłowski, PM Martyniuk, ...
Acta Physica Polonica A 132 (2), 2017
42017
Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates
D Benyahia, K Michalczewski, A Kębłowski, K Grodecki, P Martyniuk
Journal of Crystal Growth 522, 125-127, 2019
32019
Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate
J Wróbel, K Grodecki, D Benyahia, K Murawski, K Michalczewski, ...
13th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2018
32018
Study of the effectiveness of anodic films as surface passivation for InAsSb mid-wave infrared hot detectors
K Michalczewski, E Gomółka, J Ciosek, Ł Kubiszyn, D Benyahia, K Lipski, ...
Acta Physica Polonica A 134 (4), 2018
32018
High operating temperature LWIR and VLWIR InAs1− xSbx optically immersed photodetectors grown on GaAs substrates
K Michalczewski, D Benyahia, J Jureńczyk, D Stępień, A Kębłowski, ...
Infrared Physics & Technology 97, 116-122, 2019
22019
X-ray and Raman determination of InAsSb mole fraction for x< 0.5
K Murawski, K Grodecki, D Benyahia, A Wysmolek, B Jankiewicz, ...
Journal of Crystal Growth 498, 137-139, 2018
22018
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