| Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate K Michalczewski, P Martyniuk, CH Wu, J Jureńczyk, K Grodecki, ... Infrared Physics & Technology 95, 222-226, 2018 | 25 | 2018 |
| Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Optical and Quantum Electronics 48 (9), 1-7, 2016 | 18 | 2016 |
| Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition P Martyniuk, D Benyahia, A Kowalewski, Ł Kubiszyn, D Stępień, ... Solid-State Electronics 119, 1-4, 2016 | 17 | 2016 |
| Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ... Opto-Electronics Review 24 (1), 40-45, 2016 | 17 | 2016 |
| Electrical properties of midwave and longwave InAs/GaSb superlattices grown on GaAs substrates by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, J Boguski, A Kębłowski, ... Nanoscale Research Letters 13 (1), 1-7, 2018 | 16 | 2018 |
| Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Journal of Electronic Materials 47 (1), 299-304, 2018 | 16 | 2018 |
| Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ... Journal of Crystal Growth 483, 26-30, 2018 | 13 | 2018 |
| Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ... Journal of Semiconductors 39 (3), 033003, 2018 | 10 | 2018 |
| Studies of dark current reduction in InAsSb mid-wave infrared HOT detectors through Two step passivation technique K Michalczewski, F Ivaldi, ŁP Kubiszyn, D Benyahia, J Boguski, ... Acta Physica Polonica A 132 (2), 2017 | 8 | 2017 |
| p-type doping of GaSb by beryllium grown on GaAs (001) substrate by molecular beam epitaxy D Benyahia, L Kubiszyn, K Michalczewski, A Keblwski, P Martyniuk, ... JSTS: Journal of Semiconductor Technology and Science 16 (5), 695-701, 2016 | 7 | 2016 |
| nBn HgCdTe infrared detector with HgTe (HgCdTe)/CdTe SLs barrier D Benyahia, P Martyniuk, M Kopytko, J Antoszewski, W Gawron, ... Optical and Quantum Electronics 48 (3), 1-8, 2016 | 6 | 2016 |
| New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates A Kowalewski, P Martyniuk, O Markowska, D Benyahia, W Gawron Materials Science in Semiconductor Processing 41, 261-264, 2016 | 6 | 2016 |
| Demonstration of mid-wave type-II superlattice InAs/GaSb single pixel barrier detector with GaAs immersion lens P Martyniuk, W Gawron, D Stępień, D Benyahia, A Kowalewski, ... IEEE Electron Device Letters 37 (1), 64-66, 2015 | 5 | 2015 |
| Long term stability study of InAsSb mid-wave infrared HOT detectors passivated through two step passivation technique K Michalczewski, F Ivaldi, D Benyahia, J Ciosek, J Boguski, A Kębłowski, ... 13th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2018 | 4 | 2018 |
| Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates D Benyahia, ŁP Kubiszyn, K Michalczewski, A Kębłowski, PM Martyniuk, ... Acta Physica Polonica A 132 (2), 2017 | 4 | 2017 |
| Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates D Benyahia, K Michalczewski, A Kębłowski, K Grodecki, P Martyniuk Journal of Crystal Growth 522, 125-127, 2019 | 3 | 2019 |
| Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate J Wróbel, K Grodecki, D Benyahia, K Murawski, K Michalczewski, ... 13th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2018 | 3 | 2018 |
| Study of the effectiveness of anodic films as surface passivation for InAsSb mid-wave infrared hot detectors K Michalczewski, E Gomółka, J Ciosek, Ł Kubiszyn, D Benyahia, K Lipski, ... Acta Physica Polonica A 134 (4), 2018 | 3 | 2018 |
| High operating temperature LWIR and VLWIR InAs1− xSbx optically immersed photodetectors grown on GaAs substrates K Michalczewski, D Benyahia, J Jureńczyk, D Stępień, A Kębłowski, ... Infrared Physics & Technology 97, 116-122, 2019 | 2 | 2019 |
| X-ray and Raman determination of InAsSb mole fraction for x< 0.5 K Murawski, K Grodecki, D Benyahia, A Wysmolek, B Jankiewicz, ... Journal of Crystal Growth 498, 137-139, 2018 | 2 | 2018 |
