| Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices MH Park, DH Lee, K Yang, JY Park, GT Yu, HW Park, M Materano, ... Journal of Materials Chemistry C 8 (31), 10526-10550, 2020 | 116 | 2020 |
| Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2204904, 2023 | 48 | 2023 |
| Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ... Acta Materialia 222, 117405, 2022 | 19 | 2022 |
| Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ... Chemical Communications 57 (93), 12452-12455, 2021 | 19 | 2021 |
| Engineering strategies in emerging fluorite-structured ferroelectrics JY Park, DH Lee, K Yang, SH Kim, GT Yu, GH Park, EB Lee, KH Kim, ... ACS Applied Electronic Materials 4 (4), 1369-1380, 2021 | 16 | 2021 |
| Wake-up-mitigated giant ferroelectricity in Hf0. 5Zr0. 5O2 thin films through oxygen-providing, surface-oxidized W electrode K Yang, GY Kim, JJ Ryu, DH Lee, JY Park, SH Kim, GH Park, GT Yu, ... Materials Science in Semiconductor Processing 164, 107565, 2023 | 7 | 2023 |
| Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates K Yang, EB Lee, DH Lee, JY Park, SH Kim, GH Park, GT Yu, JI Lee, ... Composites Part B: Engineering 236, 109824, 2022 | 7 | 2022 |
| Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023) JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2370312, 2023 | 1 | 2023 |
| Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films (vol 222, 117405, 2022) DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ... ACTA MATERIALIA 247, 2023 | | 2023 |
| Corrigendum to’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films’[Acta Materialia 222 (2022 … DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ... Acta Materialia 247, 118732, 2023 | | 2023 |
| Correction: Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ... Chemical Communications 59 (18), 2668-2668, 2023 | | 2023 |
| Review of the mechanism for Ferroelectric Phase Formation in Fluorite-structure Oxide GT Yu, GH Park, EB Lee, MH Park New Physics: Sae Mulli 71 (11), 890-900, 2021 | | 2021 |
| A Brief Review on the Ferroelectric Fluorite-Structured Nanolaminate K Yang, JY Park, DH Lee, SH Kim, GT Yu, GH Park, EB Lee, JI Lee, ... Korean Journal of Metals and Materials 59 (12), 849-856, 2021 | | 2021 |
| New Physics: Sae Mulli GT YU, GH PARK, EB LEE, MH PARK, W SHIN, H OH, S JUNG, GH KIM, ... | | 2021 |
| Interfacial engineering of a Mo/Hf₀. ₃Zr₀. ₇O₂/Si capacitor using the direct scavenging effect of a thin Ti layer SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ... | | 2021 |
| A Brief Review on Polarization Switching Kinetics in Fluorite-structured Ferroelectrics SH Kim, KH Park, EB Lee, GT Yu, DH Lee, K Yang, JY Park, MH Park Journal of the Korean institute of surface engineering 53 (6), 330-342, 2020 | | 2020 |
Dong Hyun LeeSeoul National University, Department of Materials Science and EngineeringZweryfikowany adres z snu.ac.kr
