| Epidermis microstructure inspired graphene pressure sensor with random distributed spinosum for high sensitivity and large linearity Y Pang, K Zhang, Z Yang, S Jiang, Z Ju, Y Li, X Wang, D Wang, M Jian, ... ACS nano 12 (3), 2346-2354, 2018 | 615 | 2018 |
| A graphene-based resistive pressure sensor with record-high sensitivity in a wide pressure range H Tian, Y Shu, XF Wang, MA Mohammad, Z Bie, QY Xie, C Li, WT Mi, ... Scientific reports 5 (1), 8603, 2015 | 546 | 2015 |
| Flexible, highly sensitive, and wearable pressure and strain sensors with graphene porous network structure Y Pang, H Tian, L Tao, Y Li, X Wang, N Deng, Y Yang, TL Ren ACS applied materials & interfaces 8 (40), 26458-26462, 2016 | 441 | 2016 |
| Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing H Tian, L Zhao, X Wang, YW Yeh, N Yao, BP Rand, TL Ren Acs Nano 11 (12), 12247-12256, 2017 | 314 | 2017 |
| Wearable humidity sensor based on porous graphene network for respiration monitoring Y Pang, J Jian, T Tu, Z Yang, J Ling, Y Li, X Wang, Y Qiao, H Tian, Y Yang, ... Biosensors and Bioelectronics 116, 123-129, 2018 | 313 | 2018 |
| Multilayer graphene epidermal electronic skin Y Qiao, Y Wang, H Tian, M Li, J Jian, Y Wei, Y Tian, DY Wang, Y Pang, ... ACS nano 12 (9), 8839-8846, 2018 | 277 | 2018 |
| Graphene dynamic synapse with modulatable plasticity H Tian, W Mi, XF Wang, H Zhao, QY Xie, C Li, YX Li, Y Yang, TL Ren Nano letters 15 (12), 8013-8019, 2015 | 245 | 2015 |
| Simultaneous synthesis and integration of two-dimensional electronic components Q Zhang, XF Wang, SH Shen, Q Lu, X Liu, H Li, J Zheng, CP Yu, X Zhong, ... Nature Electronics 2 (4), 164-170, 2019 | 107 | 2019 |
| Flexible CNT-array double helices strain sensor with high stretchability for motion capture C Li, YL Cui, GL Tian, Y Shu, XF Wang, H Tian, Y Yang, F Wei, TL Ren Scientific reports 5 (1), 15554, 2015 | 102 | 2015 |
| Interface Engineering with MoS2–Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory XF Wang, H Tian, HM Zhao, TY Zhang, WQ Mao, YC Qiao, Y Pang, YX Li, ... Small 14 (2), 1702525, 2018 | 73 | 2018 |
| In situ tuning of switching window in a gate‐controlled bilayer graphene‐electrode resistive memory device H Tian, H Zhao, XF Wang, QY Xie, HY Chen, MA Mohammad, C Li, WT Mi, ... Advanced Materials 27 (47), 7767-7774, 2015 | 58 | 2015 |
| A hardware Markov chain algorithm realized in a single device for machine learning H Tian, XF Wang, MA Mohammad, GY Gou, F Wu, Y Yang, TL Ren Nature communications 9 (1), 4305, 2018 | 50 | 2018 |
| Encapsulated X-ray detector enabled by all-inorganic lead-free perovskite film with high sensitivity and low detection limit H Zhang, G Dun, Q Feng, R Zhao, R Liang, Z Gao, T Hirtz, M Chen, ... IEEE Transactions on Electron Devices 67 (8), 3191-3198, 2020 | 45 | 2020 |
| Tunable graphene oxide reduction and graphene patterning at room temperature on arbitrary substrates NQ Deng, H Tian, ZY Ju, HM Zhao, C Li, MA Mohammad, LQ Tao, Y Pang, ... Carbon 109, 173-181, 2016 | 44 | 2016 |
| Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer PZ Shao, HM Zhao, HW Cao, XF Wang, Y Pang, YX Li, NQ Deng, J Zhang, ... Applied Physics Letters 108 (20), 2016 | 40 | 2016 |
| Fabrication techniques and applications of flexible graphene-based electronic devices L Tao, D Wang, S Jiang, Y Liu, Q Xie, H Tian, N Deng, X Wang, Y Yang, ... Journal of Semiconductors 37 (4), 041001, 2016 | 38 | 2016 |
| Two-Mode MoS2 Filament Transistor with Extremely Low Subthreshold Swing and Record High On/Off Ratio XF Wang, H Tian, Y Liu, S Shen, Z Yan, N Deng, Y Yang, TL Ren ACS nano 13 (2), 2205-2212, 2019 | 37 | 2019 |
| High performance 2D perovskite/graphene optical synapses as artificial eyes H Tian, X Wang, F Wu, Y Yang, TL Ren 2018 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2018 | 29 | 2018 |
| Graphene devices based on laser scribing technology YC Qiao, YH Wei, Y Pang, YX Li, DY Wang, YT Li, NQ Deng, XF Wang, ... Japanese Journal of Applied Physics 57 (4S), 04FA01, 2018 | 26 | 2018 |
| A Graphene‐Based Filament Transistor with Sub‐10 mVdec−1 Subthreshold Swing H Tian, X Wang, H Zhao, W Mi, Y Yang, PW Chiu, TL Ren Advanced Electronic Materials 4 (4), 1700608, 2018 | 22 | 2018 |
He Tian (田禾)Tsinghua UniversityZweryfikowany adres z tsinghua.edu.cn
