Monuko du Plessis
Monuko du Plessis
Zweryfikowany adres z up.ac.za
Cytowane przez
Cytowane przez
Design and performance of wideband DRFM for radar test and evaluation
K Olivier, JE Cilliers, M Du Plessis
Electronics Letters 47 (14), 824-825, 2011
An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface
LW Snyman, M Du Plessis, E Seevinck, H Aharoni
IEEE Electron Device Letters 20 (12), 614-617, 1999
Properties of porous silicon nano-explosive devices
M du Plessis
Sensors and Actuators A: Physical 135 (2), 666-674, 2007
Tuning stubs for microstrip-patch antennas
M Du Plessis, J Cloete
IEEE Antennas and Propagation magazine 36 (6), 52-56, 1994
Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems
M Du Plessis, H Aharoni, LW Snyman
IEEE Journal of Selected Topics in Quantum Electronics 8 (6), 1412-1419, 2002
Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology
LW Snyman, H Aharoni, M Du Plessis, RBJ Gouws
Optical Engineering 37 (7), 2133-2141, 1998
Planar light-emitting electro-optical interfaces in standard silicon complementary metal oxide semiconductor integrated circuitry
LW Snyman, H Aharoni, M Du Plessis, JFK Marais, D Van Niekerk, ...
Optical Engineering 41 (12), 3230-3240, 2002
A silicon transconductance light emitting device (TRANSLED)
M Du Plessis, H Aharoni, LW Snyman
Sensors and Actuators A: Physical 80 (3), 242-248, 2000
A Decade of Porous Silicon as Nano‐Explosive Material
M Plessis
Propellants, Explosives, Pyrotechnics 39 (3), 348-364, 2014
Nanoporous silicon explosive devices
M du Plessis
Materials Science and Engineering: B 147 (2-3), 226-229, 2008
A strategic forestry site classification for the summer rainfall region of southern Africa based on climate, geology and soils
CW Smith, RN Pallett, RP Kunz, RAW Gardner, M Du Plessis
ICFR Bulletin series 3 (05), 2005
Optical sources, integrated optical detectors, and optical waveguides in standard silicon CMOS integrated circuitry
LW Snyman, H Aharoni, A Biber, A Bogalecki, L Canning, M du Plessis, ...
Silicon-based Optoelectronics II 3953, 20-36, 2000
Relationship between specific surface area and pore dimension of high porosity nanoporous silicon–Model and experiment
M Du Plessis
physica status solidi (a) 204 (7), 2319-2328, 2007
Active-bootstrapped gain-enhancement technique for low-voltage circuits
E Seevinck, M Du Plessis, TH Joubert, AE Theron
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal …, 1998
Photonic Transitions (1.4 eV–2.8 eV) in Silicon pnpInjection-Avalanche CMOS LEDs as Function of Depletion Layer Profiling and Defect Engineering
LW Snyman, M Du Plessis, E Bellotti
IEEE Journal of Quantum Electronics 46 (6), 906-919, 2010
Two-and multi-terminal CMOS/BiCMOS Si LED’s
M Du Plessis, H Aharoni, LW Snyman
Optical Materials 27 (5), 1059-1063, 2005
Spatial and intensity modulation of light emission from silicon LED matrix
M Du Plessis, H Aharoni, LW Snyman
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic …, 2000
Injection-avalanche-based n+ pn silicon complementary metal–oxide–semiconductor light-emitting device (450–750 nm) with 2-order-of-magnitude increase in light emission intensity
LW Snyman, M Du Plessis, H Aharoni
Japanese journal of Applied physics 46 (4S), 2474, 2007
Low-operating-voltage integrated silicon light-emitting devices
H Aharoni, M Du Plessis
IEEE journal of Quantum Electronics 40 (5), 557-563, 2004
Injection-avalanche based n+ pn Si CMOS LED’s (450nm. 750nm) with two order increase in light emission intensity-Applications for next generation silicon-based optoelectronics
LW Snyman, M Du Plessis, H Aharoni
Jpn. J. Appl. Physics 46 (4B), 2474-2480, 2007
Nie można teraz wykonać tej operacji. Spróbuj ponownie później.
Prace 1–20