| AlGaN/GaN HEMTs-an overview of device operation and applications UK Mishra, P Parikh, YF Wu Proceedings of the IEEE 90 (6), 1022-1031, 2002 | 2495 | 2002 |
| GaN-based RF power devices and amplifiers UK Mishra, L Shen, TE Kazior, YF Wu Proceedings of the IEEE 96 (2), 287-305, 2008 | 1994 | 2008 |
| 30-W/mm GaN HEMTs by field plate optimization YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ... IEEE Electron Device Letters 25 (3), 117-119, 2004 | 1397 | 2004 |
| Very-high power density AlGaN/GaN HEMTs YF Wu, D Kapolnek, JP Ibbetson, P Parikh, BP Keller, UK Mishra IEEE Transactions on Electron Devices 48 (3), 586-590, 2001 | 785 | 2001 |
| 40-W/mm double field-plated GaN HEMTs YF Wu, M Moore, A Saxler, T Wisleder, P Parikh 2006 64th device research conference, 151-152, 2006 | 454 | 2006 |
| Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors YF Wu, BP Keller, S Keller, D Kapolnek, P Kozodoy, SP Denbaars, ... Applied physics letters 69 (10), 1438-1440, 1996 | 445 | 1996 |
| Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer P Chavarkar, IP Smorchkova, S Keller, U Mishra, W Walukiewicz, Y Wu US Patent 6,849,882, 2005 | 377 | 2005 |
| Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition S Keller, BP Keller, YF Wu, B Heying, D Kapolnek, JS Speck, UK Mishra, ... Applied Physics Letters 68 (11), 1525-1527, 1996 | 377 | 1996 |
| High Al-content AlGaN/GaN MODFETs for ultrahigh performance YF Wu, BP Keller, P Fini, S Keller, TJ Jenkins, LT Kehias, SP Denbaars, ... IEEE Electron Device Letters 19 (2), 50-53, 1998 | 353 | 1998 |
| GaN microwave electronics UK Mishra, YF Wu, BP Keller, S Keller, SP Denbaars IEEE transactions on microwave theory and techniques 46 (6), 756-761, 1998 | 332 | 1998 |
| A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz Y Wu, M Jacob-Mitos, ML Moore, S Heikman IEEE Electron Device Letters 29 (8), 824-826, 2008 | 329 | 2008 |
| Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same Y Wu, N Zhang, J Xu, L Mc Carthy US Patent 6,586,781, 2003 | 309 | 2003 |
| Insulating gate AlGaN/GaN HEMT P Parikh, U Mishra, Y Wu US Patent 7,230,284, 2007 | 276 | 2007 |
| Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB S Keller, YF Wu, G Parish, N Ziang, JJ Xu, BP Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 48 (3), 552-559, 2001 | 270 | 2001 |
| Normally-off semiconductor devices S Heikman, Y Wu US Patent 7,985,986, 2011 | 247 | 2011 |
| Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V YF Wu, S Keller, P Kozodoy, BP Keller, P Parikh, D Kapolnek, ... IEEE Electron Device Letters 18 (6), 290-292, 1997 | 237 | 1997 |
| Semiconductor heterostructure diodes Y Wu, U Mishra, P Parikh, R Chu, I Ben-Yaacov, L Shen US Patent 7,898,004, 2011 | 228 | 2011 |
| Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures S Keller, G Parish, PT Fini, S Heikman, CH Chen, N Zhang, SP DenBaars, ... Journal of applied physics 86 (10), 5850-5857, 1999 | 220 | 1999 |
| Wide bandgap transistor devices with field plates P Parikh, Y Wu US Patent 7,501,669, 2009 | 210 | 2009 |
| Robust transistors with fluorine treatment Y Wu, M Moore, T Wisleder, P Parikh US Patent 7,638,818, 2009 | 209 | 2009 |
