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Jun Wang
Jun Wang
Assistant Professor at the University of Nebraska-Lincoln
Zweryfikowany adres z unl.edu
Tytuł
Cytowane przez
Cytowane przez
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Gate driver design for 1.7 kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection
J Wang, Z Shen, C DiMarino, R Burgos, D Boroyevich
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 516-523, 2016
1012016
Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules
J Wang, Z Shen, R Burgos, D Boroyevich
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
752015
Integrated switch current sensor for shortcircuit protection and current control of 1.7-kV SiC MOSFET modules
J Wang, Z Shen, R Burgos, D Boroyevich
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2016
722016
Switching-cycle state-space modeling and control of the modular multilevel converter
J Wang, R Burgos, D Boroyevich
IEEE Journal of Emerging and Selected Topics in Power Electronics 2 (4 …, 2014
712014
A survey on the modular multilevel converters—Modeling, modulation and controls
J Wang, R Burgos, D Boroyevich
2013 IEEE Energy Conversion Congress and Exposition, 3984-3991, 2013
662013
Development of a compact 750 kVA three-phase NPC three-level universal inverter module with specifically designed busbar
J Wang, B Yang, J Zhao, Y Deng, X He, X Zhixin
2010 IEEE Applied Power Electronics Conference and Exposition (APEC), 1266-1271, 2010
662010
Characterization and evaluation of the state-of-the-art 3.3-kV 400-A SiC MOSFETs
A Marzoughi, J Wang, R Burgos, D Boroyevich
IEEE Transactions on Industrial Electronics 64 (10), 8247-8257, 2017
522017
Design and testing of 1 kV H-bridge power electronics building block based on 1.7 kV SiC MOSFET module
J Wang, R Burgos, D Boroyevich, Z Liu
2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia …, 2018
492018
Comparison between desaturation sensing and Rogowski coil current sensing for shortcircuit protection of 1.2 kV, 300 A SiC MOSFET module
S Mocevic, J Wang, R Burgos, D Boroyevich, C Stancu, M Jaksic, ...
2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2666-2672, 2018
452018
Busbar design for SiC-based H-bridge PEBB using 1.7 kV, 400 a SiC MOSFETs operating at 100 kHz
NR Mehrabadi, I Cvetkovic, J Wang, R Burgos, D Boroyevich
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2016
412016
Comparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: desaturation versus Rogowski switch-current sensor
S Mocevic, J Wang, R Burgos, D Boroyevich, M Jaksic, C Stancu, ...
IEEE Transactions on Industry Applications, 2020
382020
Power electronics building block (PEBB) design based on 1.7 kV SiC MOSFET Modules
J Wang, Z Shen, I Cvetkovic, NR Mehrabadi, A Marzoughi, S Ohn, J Yu, ...
2017 IEEE Electric Ship Technologies Symposium (ESTS), 612-619, 2017
352017
High-scalability enhanced gate drivers for SiC MOSFET modules with transient immunity beyond 100 V/ns
J Wang, S Mocevic, R Burgos, D Boroyevich
IEEE Transactions on Power Electronics 35 (10), 10180-10199, 2020
322020
Design, analysis, and discussion of short circuit and overload gate-driver dual-protection scheme for 1.2-kV, 400-A SiC MOSFET modules
K Sun, J Wang, R Burgos, D Boroyevich
IEEE Transactions on Power Electronics, 2019
322019
750kVA 高功率密度二极管钳位型三电平通用变流模块的低感叠层母线排设计
汪鋆, 杨兵建, 徐枝新, 邓焰, 赵荣祥, 何湘宁
中国电机工程学报, 47-54, 2010
272010
Phase current sensor and short-circuit detection based on Rogowski coils integrated on gate driver for 1.2 kV SiC MOSFET half-bridge module
S Mocevic, J Wang, R Burgos, D Boroyevich, M Jaksic, M Teimor, ...
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 393-400, 2018
252018
High-density current-transformer based gate-drive power supply with reinforced isolation for 10 kV SiC MOSFET modules
J Hu, J Wang, R Burgos, B Wen, D Boroyevich
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019
242019
A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module
C DiMarino, J Wang, R Burgos, D Boroyevich
2017 IEEE Electric Ship Technologies Symposium (ESTS), 629-634, 2017
242017
Power-cell design and assessment methodology based on a high-current 10 kV SiC MOSFET half-bridge module
S Mocevic, J Yu, Y Xu, J Stewart, J Wang, I Cvetkovic, D Dong, R Burgos, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
232020
Voltage balancing of four series-connected SiC MOSFETs under 2 kV bus voltage using active dv/dt control
E Raszmann, K Sun, R Burgos, I Cvetkovic, J Wang, D Boroyevich
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 6666-6672, 2019
232019
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