Cheol Seong Hwang
Cheol Seong Hwang
Professor, Department of Materials Science and Engineering, Seoul National University
Zweryfikowany adres z snu.ac.kr - Strona główna
Cytowane przez
Cytowane przez
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ...
Nature nanotechnology 5 (2), 148-153, 2010
Resistive switching mechanism of thin films grown by atomic-layer deposition
BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ...
Journal of applied physics 98 (3), 033715, 2005
Multifunctional wearable devices for diagnosis and therapy of movement disorders
D Son, J Lee, S Qiao, R Ghaffari, J Kim, JE Lee, C Song, SJ Kim, DJ Lee, ...
Nature nanotechnology 9 (5), 397-404, 2014
Emerging memories: resistive switching mechanisms and current status
DS Jeong, R Thomas, RS Katiyar, JF Scott, H Kohlstedt, A Petraru, ...
Reports on progress in physics 75 (7), 076502, 2012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
KM Kim, DS Jeong, CS Hwang
Nanotechnology 22 (25), 254002, 2011
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang
Applied Physics Letters 102 (24), 242905, 2013
Anode-interface localized filamentary mechanism in resistive switching of thin films
KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang
Applied physics letters 91 (1), 012907, 2007
Resistive switching materials for information processing
Z Wang, H Wu, GW Burr, CS Hwang, KL Wang, Q Xia, JJ Yang
Nature Reviews Materials 5 (3), 173-195, 2020
A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors
AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ...
Advanced Materials 23 (10), 1277-1281, 2011
Identification of a determining parameter for resistive switching of thin films
C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang
Applied Physics Letters 86 (26), 262907, 2005
High dielectric constant thin films on a Ru electrode grown at 250 °C by atomic-layer deposition
SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong
Applied Physics Letters 85 (18), 4112-4114, 2004
Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application
CS Hwang, SO Park, HJ Cho, CS Kang, HK Kang, SI Lee, MY Lee
Applied physics letters 67 (19), 2819-2821, 1995
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view
JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ...
Advanced Functional Materials 24 (34), 5316-5339, 2014
Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ...
Advanced Materials 20 (8), 1429-1435, 2008
The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang
Applied Physics Letters 104 (7), 072901, 2014
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
KH Ji, JI Kim, HY Jung, SY Park, R Choi, UK Kim, CS Hwang, D Lee, ...
Applied Physics Letters 98 (10), 103509, 2011
First-principles study on doping and phase stability of HfO 2
CK Lee, E Cho, HS Lee, CS Hwang, S Han
Physical Review B 78 (1), 012102, 2008
Review and perspective on ferroelectric HfO2-based thin films for memory applications
MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang
Mrs Communications 8 (3), 795-808, 2018
Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, CS Hwang
Advanced Energy Materials 4 (16), 1400610, 2014
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