Exploring the limits of stress-enhanced hole mobility L Smith, V Moroz, G Eneman, P Verheyen, F Nouri, L Washington, ...
IEEE Electron Device Letters 26 (9), 652-654, 2005
86 2005 MOSFET degradation kinetics and its simulation O Penzin, A Haggag, W McMahon, E Lyumkis, K Hess
IEEE Transactions on Electron Devices 50 (6), 1445-1450, 2003
73 2003 Random dopant fluctuation modelling with the impedance field method A Wettstein, O Penzin, E Lyumkis, W Fichtner
International Conference on Simulation of Semiconductor Processes and …, 2003
65 2003 14 nm FinFET stress engineering with epitaxial SiGe source/drain M Choi, V Moroz, L Smith, O Penzin
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012
38 2012 Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide code JL Leray, P Paillet, V Ferlet-Cavrois, C Tavernier, K Belhaddad, O Penzin
IEEE Transactions on Nuclear Science 47 (3), 620-626, 2000
29 2000 Kinetic velocity model to account for ballistic effects in the drift-diffusion transport approach O Penzin, L Smith, A Erlebach, M Choi, KH Lee
IEEE Transactions on Electron Devices 64 (11), 4599-4606, 2017
26 2017 Nonparabolic multivalley quantum correction model for InGaAs double-gate structures O Penzin, G Paasch, L Smith
IEEE transactions on electron devices 60 (7), 2246-2250, 2013
19 2013 Integration of the density gradient model into a general purpose device simulator A Wettstein, O Penzin, E Lyumkis
VLSI Design 15, 751-759, 2002
19 2002 Extended Quantum Correction Model Applied to Six-Band Valence Bands Near Silicon/Oxide Interfaces O Penzin, G Paasch, FO Heinz, L Smith
IEEE transactions on electron devices 58 (6), 1614-1619, 2011
16 2011 SOI related simulation challenges with moment based BTE solvers JL Egley, B Polsky, B Min, E Lyumkis, O Penzin, M Foisy
2000 International Conference on Simulation Semiconductor Processes and …, 2000
12 2000 On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistors B Polsky, O Penzin, KE Sayed, A Schenk, A Wettstein, W Fichtner
IEEE transactions on electron devices 52 (4), 500-506, 2005
11 2005 DESSIS 5.0 Manual R Escoffier, W Fichtner, D Fokkema, E Lyumkis, O Penzin, B Polsky, ...
ISE Integrated Systems Engineering AG, CH-Zürich, 1996
11 1996 Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed, A Wettstein, ...
International conference on simulation of semiconductor processes and …, 2002
10 2002 Numerical analysis of electron tunneling through heterointerfaces and schottky barriers in heterostructure devices E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd …, 2000
9 2000 Layer thickness and stress-dependent correction for InGaAs low-field mobility in TCAD applications O Penzin, L Smith, A Erlebach, KH Lee
IEEE Transactions on Electron Devices 62 (2), 493-500, 2015
7 2015 Density gradient transport model for the simulations of ultrathin, ultrashort SOI under non-equilibrium conditions E Sayed
2002 IEEE International SOI Conference, 143-144, 2002
6 2002 Quasi-ballistic drift-diffusion simulation of SiGe nanowire MOSFETs using the kinetic velocity model KH Lee, A Erlebach, O Penzin, L Smith
IEEE Journal of the Electron Devices Society 9, 387-392, 2021
5 2021 Elec. Dev. Let L Smith, V Moroz, G Eneman, P Verheyen, F Nouri, L Washington, ...
Elec. Dev. Let., IEEE 26, 652-654, 2005
5 2005 Simulations of quantum transport in HEMT using density gradient model E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed, A Wettstein, ...
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC …, 2002
5 2002 Three-dimensional TCAD process and device simulations I Avci, P Balasingam, K El Sayed, J Gharib, MD Johnson, K Kells, ...
2006 16th Biennial University/Government/Industry Microelectronics Symposium …, 2006
4 2006