High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high K Kobayashi, M Yabashi, Y Takata, T Tokushima, S Shin, K Tamasaku, ...
Applied physics letters 83 (5), 1005-1007, 2003
419 2003 Growth and applications of GeSn-related group-IV semiconductor materials S Zaima, O Nakatsuka, N Taoka, M Kurosawa, W Takeuchi, M Sakashita
Science and technology of advanced materials 16 (4), 043502, 2015
198 2015 Growth of highly strain-relaxed Ge1− xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method S Takeuchi, Y Shimura, O Nakatsuka, S Zaima, M Ogawa, A Sakai
Applied physics letters 92 (23), 2008
157 2008 Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ...
Microelectronic Engineering 88 (4), 342-346, 2011
156 2011 Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC R Konishi, R Yasukochi, O Nakatsuka, Y Koide, M Moriyama, M Murakami
Materials Science and Engineering: B 98 (3), 286-293, 2003
121 2003 Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy K Hamaya, H Itoh, O Nakatsuka, K Ueda, K Yamamoto, M Itakura, ...
Physical review letters 102 (13), 137204, 2009
115 2009 Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates O Nakatsuka, N Tsutsui, Y Shimura, S Takeuchi, A Sakai, S Zaima
Japanese Journal of Applied Physics 49 (4S), 04DA10, 2010
113 2010 Low temperature growth of Ge1− xSnx buffer layers for tensile–strained Ge layers Y Shimura, N Tsutsui, O Nakatsuka, A Sakai, S Zaima
Thin Solid Films 518 (6), S2-S5, 2010
108 2010 Growth and structure evaluation of strain-relaxed Ge1− xSnx buffer layers grown on various types of substrates S Takeuchi, A Sakai, K Yamamoto, O Nakatsuka, M Ogawa, S Zaima
Semiconductor science and technology 22 (1), S231, 2006
96 2006 High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization W Takeuchi, N Taoka, M Kurosawa, M Sakashita, O Nakatsuka, S Zaima
Applied Physics Letters 107 (2), 2015
80 2015 Pure-edge dislocation network for strain-relaxed SiGe∕ Si (001) systems A Sakai, N Taoka, O Nakatsuka, S Zaima, Y Yasuda
Applied Physics Letters 86 (22), 2005
67 2005 Improvement in NiSi/Si contact properties with C-implantation O Nakatsuka, K Okubo, A Sakai, M Ogawa, Y Yasuda, S Zaima
Microelectronic Engineering 82 (3-4), 479-484, 2005
66 2005 Tensile strained Ge layers on strain-relaxed Ge1− xSnx/virtual Ge substrates S Takeuchi, A Sakai, O Nakatsuka, M Ogawa, S Zaima
Thin Solid Films 517 (1), 159-162, 2008
64 2008 Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC O Nakatsuka, T Takei, Y Koide, M Murakami
Materials Transactions 43 (7), 1684-1688, 2002
62 2002 Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers M Kurosawa, M Kato, T Yamaha, N Taoka, O Nakatsuka, S Zaima
Applied Physics Letters 106 (17), 2015
60 2015 Control of Sn precipitation and strain relaxation in compositionally step-graded Ge1-xSnx buffer layers for tensile-strained ge layers Y Shimura, N Tsutsui, O Nakatsuka, A Sakai, S Zaima
Japanese Journal of Applied Physics 48 (4S), 04C130, 2009
54 2009 Crystalline orientation dependence of electrical properties of Mn Germanide/Ge (1 1 1) and (0 0 1) Schottky contacts T Nishimura, O Nakatsuka, S Akimoto, W Takeuchi, S Zaima
Microelectronic engineering 88 (5), 605-609, 2011
50 2011 Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe (C) contacts S Zaima, O Nakatsuka, A Sakai, J Murota, Y Yasuda
Applied surface science 224 (1-4), 215-221, 2004
50 2004 Growth of Ge1− xSnx heteroepitaxial layers with very high Sn contents on InP (001) substrates M Nakamura, Y Shimura, S Takeuchi, O Nakatsuka, S Zaima
Thin Solid Films 520 (8), 3201-3205, 2012
47 2012 Large grain growth of Ge-rich Ge1− xSnx (x≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water M Kurosawa, N Taoka, H Ikenoue, O Nakatsuka, S Zaima
Applied Physics Letters 104 (6), 2014
46 2014 
Masashi KUROSAWANagoya UniversityZweryfikowany adres z nagoya-u.jp
