Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management JP Zhang, HM Wang, ME Gaevski, CQ Chen, Q Fareed, JW Yang, ...
Applied physics letters 80 (19), 3542-3544, 2002
266 2002 AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire HM Wang, JP Zhang, CQ Chen, Q Fareed, JW Yang, MA Khan
Applied physics letters 81 (4), 604-606, 2002
257 2002 Pulsed atomic-layer epitaxy of ultrahigh-quality structures for deep ultraviolet emissions below 230 nm JP Zhang, MA Khan, WH Sun, HM Wang, CQ Chen, Q Fareed, E Kuokstis, ...
Applied Physics Letters 81 (23), 4392-4394, 2002
167 2002 Terahertz detection by GaN/AlGaN transistors A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ...
Electronics Letters 42 (23), 1342-1344, 2006
140 2006 GaN homoepitaxy on freestanding oriented GaN substrates CQ Chen, ME Gaevski, WH Sun, E Kuokstis, JP Zhang, RSQ Fareed, ...
Applied physics letters 81 (17), 3194-3196, 2002
110 2002 Pulsed atomic layer epitaxy of quaternary AlInGaN layers J Zhang, E Kuokstis, Q Fareed, H Wang, J Yang, G Simin, MA Khan, ...
Applied Physics Letters 79 (7), 925-927, 2001
109 2001 Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates Z Chen, RS Qhalid Fareed, M Gaevski, V Adivarahan, JW Yang, A Khan, ...
Applied physics letters 89 (8), 2006
102 2006 Etching a nitride-based heterostructure R Gaska, X Hu, Q Fareed, M Shur
US Patent 7,429,534, 2008
97 2008 High-Temperature Performance of AlGaN/GaN MOSHEMT With Gate Insulator Fabricated on Si (111) Substrate F Husna, M Lachab, M Sultana, V Adivarahan, Q Fareed, A Khan
IEEE Transactions on Electron Devices 59 (9), 2424-2429, 2012
92 2012 Near-band-edge photoluminescence of wurtzite-type AlN E Kuokstis, J Zhang, Q Fareed, JW Yang, G Simin, MA Khan, R Gaska, ...
Applied Physics Letters 81 (15), 2755-2757, 2002
90 2002 High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition RSQ Fareed, R Jain, R Gaska, MS Shur, J Wu, W Walukiewicz, MA Khan
Applied physics letters 84 (11), 1892-1894, 2004
86 2004 Methods of growing nitride-based film using varying pulses Q Fareed, R Gaska, M Shur
US Patent 7,192,849, 2007
84 2007 V-shaped defects in InGaN/GaN multiquantum wells S Mahanty, M Hao, T Sugahara, RSQ Fareed, Y Morishima, Y Naoi, ...
Materials Letters 41 (2), 67-71, 1999
78 1999 AlGaN layers grown on GaN using strain-relief interlayers CQ Chen, JP Zhang, ME Gaevski, HM Wang, WH Sun, RSQ Fareed, ...
Applied physics letters 81 (26), 4961-4963, 2002
70 2002 276 nm substrate-free flip-chip AlGaN light-emitting diodes S Hwang, D Morgan, A Kesler, M Lachab, B Zhang, A Heidari, H Nazir, ...
Applied physics express 4 (3), 032102, 2011
65 2011 Band-edge luminescence in quaternary AlInGaN light-emitting diodes M Shatalov, A Chitnis, V Adivarahan, A Lunev, J Zhang, JW Yang, ...
Applied Physics Letters 78 (6), 817-819, 2001
65 2001 Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition RS Qhalid Fareed, JW Yang, J Zhang, V Adivarahan, V Chaturvedi, ...
Applied Physics Letters 77 (15), 2343-2345, 2000
63 2000 Utlraviolet light emitting devices and methods of fabrication MA Khan, Q Fareed, V Adivarahan
US Patent 9,331,240, 2016
59 2016 Air-bridged lateral growth of crack-free on highly relaxed porous GaN RSQ Fareed, V Adivarahan, CQ Chen, S Rai, E Kuokstis, JW Yang, ...
Applied physics letters 84 (5), 696-698, 2004
59 2004 Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes JP Zhang, V Adivarahan, HM Wang, Q Fareed, E Kuokstis, A Chitnis, ...
Japanese Journal of Applied Physics 40 (9A), L921, 2001
59 2001