Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity R Midya, Z Wang, J Zhang, SE Savel'ev, C Li, M Rao, MH Jang, S Joshi, ...
Advanced Materials 29 (12), 1604457, 2017
218 2017 Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor H Jiang, L Han, P Lin, Z Wang, MH Jang, Q Wu, M Barnell, JJ Yang, ...
Scientific reports 6, 28525, 2016
127 2016 Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors C Li, L Han, H Jiang, MH Jang, P Lin, Q Wu, M Barnell, JJ Yang, HL Xin, ...
Nature Communications 8, 15666, 2017
117 2017 Observing Oxygen Vacancy Driven Electroforming in Pt–TiO2 –Pt Device via Strong Metal Support Interaction MH Jang, R Agarwal, P Nukala, D Choi, ATC Johnson, IW Chen, ...
Nano letters 16 (4), 2139-2144, 2016
64 2016 Direct observation of metal–insulator transition in single-crystalline germanium telluride nanowire memory devices prior to amorphization P Nukala, R Agarwal, X Qian, MH Jang, S Dhara, K Kumar, ATC Johnson, ...
Nano letters 14 (4), 2201-2209, 2014
62 2014 Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films MH Jang, SJ Park, DH Lim, MH Cho, KH Do, DH Ko, HC Sohn
Applied Physics Letters 95 (1), 012102-012102-3, 2009
49 2009 Electrochemical metallization switching with a platinum group metal in different oxides Z Wang, H Jiang, MH Jang, P Lin, A Ribbe, Q Xia, JJ Yang
Nanoscale 8 (29), 14023-14030, 2016
35 2016 Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator SJ Kang, KB Chung, DS Park, HJ Kim, YK Choi, MH Jang, M Noh, ...
Synthetic metals 146 (3), 351-354, 2004
35 2004 Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration HW Park, KB Chung, JS Park, S Ji, K Song, H Lim, MH Jang
Ceramics International 41 (1), 1641-1645, 2015
33 2015 Change in band alignment of CJ Yim, DH Ko, MH Jang, KB Chung, MH Cho, HT Jeon
Applied Physics Letters 92 (1), 012922, 2008
25 2008 Investigation of phase transition of GeSbTe and N-incorporated GeSbTe films using x-ray absorption spectroscopy Y Kim, MH Jang, K Jeong, MH Cho, KH Do, DH Ko, HC Sohn, MG Kim
Applied Physics Letters 92, 061910, 2008
23 2008 Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure MH Jang, SJ Park, DH Lim, SJ Park, MH Cho, DH Ko, MY Heo, HC Sohn, ...
Applied Physics Letters 96 (5), 052112-052112-3, 2010
20 2010 Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer DS Park, SJ Kang, HJ Kim, MH Jang, M Noh, KH Yoo, CN Whang, YS Lee, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
20 2005 Characteristics of phase transition and separation in a In–Ge–Sb–Te system SJ Park, MH Jang, SJ Park, MH Cho, DH Ko
Applied surface science 258 (24), 9786-9791, 2012
18 2012 Ultrafast phase change and long durability of BN-incorporated GeSbTe MH Jang, SJ Park, M Ahn, KS Jeong, SJ Park, MH Cho, JY Song, H Jeong
Journal of Materials Chemistry C 3 (8), 1707-1715, 2015
17 2015 Effect of amorphization on the structural stability and reversibility of Ge 2 Sb 2 Te 5 and oxygen incorporated Ge 2 Sb 2 Te 5 films SJ Park, MH Jang, SJ Park, M Ahn, DB Park, DH Ko, MH Cho
Journal of Materials Chemistry 22 (32), 16527-16533, 2012
15 2012 Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge–Te bonding in the crystallization mechanism SJ Park, H Park, MH Jang, M Ahn, WJ Yang, JH Han, HS Jeong, CW Kim, ...
Journal of Materials Chemistry C 3 (36), 9393-9402, 2015
12 2015 The origin of the resistance change in GeSbTe films MH Jang, SJ Park, SJ Park, MH Cho, EZ Kurmaev, LD Finkelstein, ...
Applied physics letters 97 (15), 152113, 2010
12 2010 A multiscale materials-to-systems modeling of polycrystalline PbSe photodetectors S Ganguly, MH Jang, Y Tan, SS Yoo, MC Gupta, AW Ghosh
Journal of Applied Physics 126 (14), 143103, 2019
11 2019 Properties of chemical bath deposited and sensitized PbSe thin films for IR detection MH Jang, SS Yoo, MT Kramer, NK Dhar, MC Gupta
Semiconductor Science and Technology 34 (11), 115010, 2019
11 2019 