Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity R Midya, Z Wang, J Zhang, SE Savel'ev, C Li, M Rao, MH Jang, S Joshi, ...
Advanced Materials 29 (12), 1604457, 2017
285 2017 Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor H Jiang, L Han, P Lin, Z Wang, MH Jang, Q Wu, M Barnell, JJ Yang, ...
Scientific reports 6 (1), 28525, 2016
179 2016 Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors C Li, L Han, H Jiang, MH Jang, P Lin, Q Wu, M Barnell, JJ Yang, HL Xin, ...
Nature Communications 8, 15666, 2017
169 2017 Observing Oxygen Vacancy Driven Electroforming in Pt–TiO2 –Pt Device via Strong Metal Support Interaction MH Jang, R Agarwal, P Nukala, D Choi, ATC Johnson, IW Chen, ...
Nano letters 16 (4), 2139-2144, 2016
76 2016 Direct observation of metal–insulator transition in single-crystalline germanium telluride nanowire memory devices prior to amorphization P Nukala, R Agarwal, X Qian, MH Jang, S Dhara, K Kumar, ATC Johnson, ...
Nano letters 14 (4), 2201-2209, 2014
63 2014 Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films MH Jang, SJ Park, DH Lim, MH Cho, KH Do, DH Ko, HC Sohn
Applied Physics Letters 95 (1), 012102-012102-3, 2009
55 2009 Electrochemical metallization switching with a platinum group metal in different oxides Z Wang, H Jiang, MH Jang, P Lin, A Ribbe, Q Xia, JJ Yang
Nanoscale 8 (29), 14023-14030, 2016
41 2016 Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration HW Park, KB Chung, JS Park, S Ji, K Song, H Lim, MH Jang
Ceramics International 41 (1), 1641-1645, 2015
39 2015 Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator SJ Kang, KB Chung, DS Park, HJ Kim, YK Choi, MH Jang, M Noh, ...
Synthetic metals 146 (3), 351-354, 2004
35 2004 Investigation of phase transition of GeSbTe and N-incorporated GeSbTe films using x-ray absorption spectroscopy Y Kim, MH Jang, K Jeong, MH Cho, KH Do, DH Ko, HC Sohn, MG Kim
Applied Physics Letters 92, 061910, 2008
26 2008 Change in band alignment of CJ Yim, DH Ko, MH Jang, KB Chung, MH Cho, HT Jeon
Applied Physics Letters 92 (1), 012922, 2008
26 2008 Properties of chemical bath deposited and sensitized PbSe thin films for IR detection MH Jang, SS Yoo, MT Kramer, NK Dhar, MC Gupta
Semiconductor Science and Technology 34 (11), 115010, 2019
21 2019 Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure MH Jang, SJ Park, DH Lim, SJ Park, MH Cho, DH Ko, MY Heo, HC Sohn, ...
Applied Physics Letters 96 (5), 052112-052112-3, 2010
21 2010 Characteristics of phase transition and separation in a In–Ge–Sb–Te system SJ Park, MH Jang, SJ Park, MH Cho, DH Ko
Applied surface science 258 (24), 9786-9791, 2012
20 2012 Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer DS Park, SJ Kang, HJ Kim, MH Jang, M Noh, KH Yoo, CN Whang, YS Lee, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
20 2005 Mid-wavelength infrared photo response and band alignment for sensitized PbSe thin films MH Jang, PM Litwin, SS Yoo, SJ McDonnell, NK Dhar, MC Gupta
Journal of Applied Physics 126 (10), 105701, 2019
19 2019 Ultrafast phase change and long durability of BN-incorporated GeSbTe MH Jang, SJ Park, M Ahn, KS Jeong, SJ Park, MH Cho, JY Song, H Jeong
Journal of Materials Chemistry C 3 (8), 1707-1715, 2015
19 2015 Effect of amorphization on the structural stability and reversibility of Ge 2 Sb 2 Te 5 and oxygen incorporated Ge 2 Sb 2 Te 5 films SJ Park, MH Jang, SJ Park, M Ahn, DB Park, DH Ko, MH Cho
Journal of Materials Chemistry 22 (32), 16527-16533, 2012
16 2012 Photoconductive mechanism on IR sensitive iodized PbSe thin films via strong hole-phonon interaction and minority carrier diffusion MH Jang, ER Hoglund, PM Litwin, SS Yoo, SJ McDonnell, JM Howe, ...
Applied Optics 59, 10228, 2020
15 2020 Electrical transport properties of sensitized PbSe thin films for IR imaging sensors MH Jang, SS Yoo, MT Kramer, NK Dhar, MC Gupta
Semiconductor Science and Technology 34 (6), 065009, 2019
15 2019 