In situ study of a composition of outlet gases from biogas fuelled Solid Oxide Fuel Cell performed by the Fourier Transform Infrared Spectroscopy M Chlipała, P Błaszczak, SF Wang, P Jasiński, B Bochentyn International Journal of Hydrogen Energy 44 (26), 13864-13874, 2019 | 29 | 2019 |
Copper and cobalt co-doped ceria as an anode catalyst for DIR-SOFCs fueled by biogas B Bochentyn, M Chlipała, M Gazda, SF Wang, P Jasiński Solid State Ionics 330, 47-53, 2019 | 25 | 2019 |
Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction K Pieniak, M Chlipala, H Turski, W Trzeciakowski, G Muziol, G Staszczak, ... Optics Express 29 (2), 1824-1837, 2021 | 21 | 2021 |
Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions M Siekacz, G Muziol, H Turski, M Hajdel, M Żak, M Chlipała, M Sawicka, ... Electronics 9 (9), 1481, 2020 | 20 | 2020 |
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs M Hajdel, M Chlipała, M Siekacz, H Turski, P Wolny, ... Materials 15 (1), 237, 2021 | 18 | 2021 |
Tunnel Junctions with a Doped ( Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices M Żak, G Muziol, H Turski, M Siekacz, K Nowakowski-Szkudlarek, ... Physical Review Applied 15 (2), 024046, 2021 | 14 | 2021 |
Structural and catalytic properties of ceria layers doped with transition metals for SOFCs fueled by biogas B Hołówko, P Błaszczak, M Chlipała, M Gazda, SF Wang, P Jasiński, ... International Journal of Hydrogen Energy 45 (23), 12982-12996, 2020 | 14 | 2020 |
Nitride LEDs and Lasers with Buried Tunnel Junctions H Turski, M Siekacz, G Muzioł, M Hajdel, S Stańczyk, M Żak, M Chlipała, ... ECS Journal of Solid State Science and Technology 9 (1), 015018, 2019 | 14 | 2019 |
Nitride light-emitting diodes for cryogenic temperatures M Chlipala, H Turski, M Siekacz, K Pieniak, K Nowakowski-Szkudlarek, ... Optics Express 28 (20), 30299-30308, 2020 | 12 | 2020 |
Electrical transport properties of highly doped N-type GaN materials L Konczewicz, E Litwin-Staszewska, M Zajac, H Turski, M Bockowski, ... Semiconductor Science and Technology 37 (5), 055012, 2022 | 10 | 2022 |
Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design H Turski, S Bharadwaj, M Siekacz, G Muziol, M Chlipala, M Zak, M Hajdel, ... Gallium Nitride Materials and Devices XV 11280, 111-116, 2020 | 3 | 2020 |
Long-Lived Excitations in Wide Quantum Wells A Bercha, G Muziol, M Chlipala, W Trzeciakowski Physical Review Applied 20 (3), 034040, 2023 | 2 | 2023 |
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN H Turski, P Wolny, M Chlipala, M Sawicka, A Reszka, P Kempisty, ... Materials 15 (17), 5929, 2022 | 2 | 2022 |
Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer M Chlipała, H Turski, M Żak, G Muziol, M Siekacz, ... Applied Physics Letters 120 (17), 2022 | 2 | 2022 |
Competition between built-in polarization and p–n junction field in III-nitride heterostructures H Turski, M Chlipala, E Zdanowicz, E Rogowicz, G Muziol, J Moneta, ... Journal of Applied Physics 134 (24), 2023 | 1 | 2023 |
Lateral carrier injection for the uniform pumping of several quantum wells in InGaN/GaN light-emitting diodes D Schiavon, M Chlipala, P Perlin Optics Express 29 (3), 3001-3010, 2021 | 1 | 2021 |
Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs M Chlipała, H Turski ACS Applied Materials & Interfaces, 2024 | | 2024 |
Dualtronics: leveraging both faces of polar semiconductors L van Deurzen, E Kim, N Pieczulewski, Z Zhang, A Feduniewicz-Zmuda, ... arXiv preprint arXiv:2404.03733, 2024 | | 2024 |
Bidirectional light-emitting diode as a visible light source driven by alternating current M Żak, G Muziol, M Siekacz, A Bercha, M Hajdel, ... Nature Communications 14 (1), 7562, 2023 | | 2023 |
Tunnel junctions for new architecture of III-N devices (Conference Presentation) C Skierbiszewski, G Muzioł, H Turski, M Siekacz, J Slawinska, M Chlipala, ... Light-Emitting Devices, Materials, and Applications XXVII, PC124410J, 2023 | | 2023 |