| Graphene-based nitrogen dioxide gas sensors G Ko, HY Kim, J Ahn, YM Park, KY Lee, J Kim Current Applied Physics 10 (4), 1002-1004, 2010 | 400 | 2010 |
| Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors L Liu, CF Lo, Y Xi, Y Wang, F Ren, SJ Pearton, HY Kim, J Kim, RC Fitch, ... Journal of Vacuum Science & Technology B 31 (2), 2013 | 49 | 2013 |
| GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes BJ Kim, G Yang, HY Kim, KH Baik, MA Mastro, JK Hite, CR Eddy, F Ren, ... Optics express 21 (23), 29025-29030, 2013 | 46 | 2013 |
| Fabrication of GaN nanorods by inductively coupled plasma etching via SiO2 nanosphere lithography BJ Kim, H Jung, HY Kim, J Bang, J Kim Thin Solid Films 517 (14), 3859-3861, 2009 | 39 | 2009 |
| Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction G Shin, HY Kim, J Kim Korean Journal of Chemical Engineering 35, 574-578, 2018 | 38 | 2018 |
| Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors L Liu, C Velez Cuervo, Y Xi, F Ren, SJ Pearton, HY Kim, J Kim, ... Journal of Vacuum Science & Technology B 31 (4), 2013 | 35 | 2013 |
| Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors HY Kim, J Kim, L Liu, CF Lo, F Ren, SJ Pearton Journal of Vacuum Science & Technology B 30 (1), 2012 | 34 | 2012 |
| Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes HY Kim, J Kim, F Ren, S Jang Journal of Vacuum Science & Technology B 28 (1), 27-29, 2010 | 34 | 2010 |
| Polarization fields in III-nitride nanowire devices MA Mastro, B Simpkins, GT Wang, J Hite, CR Eddy, HY Kim, J Ahn, J Kim Nanotechnology 21 (14), 145205, 2010 | 33 | 2010 |
| Contacting mechanically exfoliated β-Ga2O3 nanobelts for (opto) electronic device applications J Bae, HY Kim, J Kim ECS Journal of Solid State Science and Technology 6 (2), Q3045, 2016 | 32 | 2016 |
| Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon HY Kim, C Lee, J Kim, F Ren, SJ Pearton Journal of Vacuum Science & Technology B 30 (3), 2012 | 32 | 2012 |
| Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies HY Kim, CF Lo, L Liu, F Ren, J Kim, SJ Pearton Applied Physics Letters 100 (1), 2012 | 31 | 2012 |
| Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications BJ Kim, MA Mastro, H Jung, HY Kim, SH Kim, RT Holm, J Hite, CR Eddy Jr, ... Thin solid films 516 (21), 7744-7747, 2008 | 31 | 2008 |
| Transfer-free growth of multilayer graphene using self-assembled monolayers G Yang, HY Kim, S Jang, J Kim ACS Applied Materials & Interfaces 8 (40), 27115-27121, 2016 | 28 | 2016 |
| Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors CF Lo, L Liu, F Ren, HY Kim, J Kim, SJ Pearton, O Laboutin, Y Cao, ... Journal of Vacuum Science & Technology B 29 (6), 2011 | 28 | 2011 |
| Selective chemical etch of gallium nitride by phosphoric acid C Lee, JK Hite, MA Mastro, JA Freitas, CR Eddy, HY Kim, J Kim Journal of Vacuum Science & Technology A 30 (4), 2012 | 27 | 2012 |
| AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons HY Kim, J Kim, SP Yun, KR Kim, TJ Anderson, F Ren, SJ Pearton Journal of The Electrochemical Society 155 (7), H513, 2008 | 27 | 2008 |
| Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors HY Kim, J Kim, L Liu, CF Lo, F Ren, SJ Pearton Journal of Vacuum Science & Technology B 31 (5), 2013 | 22 | 2013 |
| Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons HY Kim, T Anderson, MA Mastro, JA Freitas Jr, S Jang, J Hite, CR Eddy Jr, ... Journal of crystal growth 326 (1), 62-64, 2011 | 21 | 2011 |
| Penetration effects of high-energy protons in GaN: a micro-Raman spectroscopy study HY Kim, JA Freitas, J Kim Electrochemical and Solid-State Letters 14 (1), H5, 2010 | 21 | 2010 |
