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Lining ZHANG
Tytuł
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A junctionless nanowire transistor with a dual-material gate
H Lou, L Zhang, Y Zhu, X Lin, S Yang, J He, M Chan
IEEE transactions on Electron Devices 59 (7), 1829-1836, 2012
1902012
An analytical charge model for double-gate tunnel FETs
L Zhang, X Lin, J He, M Chan
IEEE Transactions on Electron Devices 59 (12), 3217-3223, 2012
1122012
Zero-mask contact fuse for one-time-programmable memory in standard CMOS processes
M Shi, J He, L Zhang, C Ma, X Zhou, H Lou, H Zhuang, R Wang, Y Li, ...
IEEE electron device letters 32 (7), 955-957, 2011
1022011
Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics
M Wu, Y Xiao, Y Zeng, Y Zhou, X Zeng, L Zhang, W Liao
InfoMat 3 (4), 362-396, 2021
982021
A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body
F Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M Chan
IEEE Transactions on Electron Devices 55 (8), 2187-2194, 2008
962008
SPICE modeling of double-gate tunnel-FETs including channel transports
L Zhang, M Chan
IEEE Transactions on Electron Devices 61 (2), 300-307, 2014
842014
Artificial neural network design for compact modeling of generic transistors
L Zhang, M Chan
Journal of Computational Electronics 16 (3), 825-832, 2017
812017
A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors
L Zhang, J He, M Chan
Electron Devices Meeting (IEDM), 2012 IEEE International, 6.8. 1-6.8. 4, 2012
732012
Tunneling Field Effect Transistor Technology
L Zhang, M Chan
Springer International Publishing, 2016
602016
Analytical modeling of capacitances for GaN HEMTs, including parasitic components
A Zhang, L Zhang, Z Tang, X Cheng, Y Wang, KJ Chen, M Chan
IEEE Transactions on Electron Devices 61 (3), 755-761, 2014
532014
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET
L Zhang, C Ma, J He, X Lin, M Chan
Solid-state electronics 54 (8), 806-808, 2010
502010
A compact model for double-gate heterojunction tunnel FETs
Y Dong, L Zhang, X Li, X Lin, M Chan
IEEE Transactions on Electron Devices 63 (11), 4506-4513, 2016
432016
Modeling short-channel effect of elliptical gate-all-around MOSFET by effective radius
L Zhang, L Li, J He, M Chan
IEEE electron device letters 32 (9), 1188-1190, 2011
412011
A compact model of subthreshold current with source/drain depletion effect for the short-channel junctionless cylindrical surrounding-gate MOSFETs
Y Xiao, B Zhang, H Lou, L Zhang, X Lin
IEEE Transactions on Electron Devices 63 (5), 2176-2181, 2016
402016
Steep slope devices and TFETs
L Zhang, J Huang, M Chan
Tunneling Field Effect Transistor Technology, 1-31, 2016
382016
Investigation of LOCOS-and polysilicon-bound diodes for robust electrostatic discharge (ESD) applications
Y Li, JJ Liou, JE Vinson, L Zhang
IEEE Transactions on Electron Devices 57 (4), 814-819, 2010
352010
A compact model of silicon-based nanowire MOSFETs for circuit simulation and design
J Yang, J He, F Liu, L Zhang, F Liu, X Zhang, M Chan
IEEE transactions on electron devices 55 (11), 2898-2906, 2008
352008
Tunneling contact IGZO TFTs with reduced saturation voltages
L Wang, Y Sun, X Zhang, L Zhang, S Zhang, M Chan
Applied Physics Letters 110 (15), 152105, 2017
342017
A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect
Y Xiao, X Lin, H Lou, B Zhang, L Zhang, M Chan
IEEE Transactions on Electron Devices 63 (12), 4661-4667, 2016
312016
Numerical study on dual material gate nanowire tunnel field-effect transistor
A Zhang, J Mei, L Zhang, H He, J He, M Chan
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International …, 2012
292012
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