| GaN evaporation in molecular-beam epitaxy environment N Grandjean, J Massies, F Semond, SY Karpov, RA Talalaev Applied Physics Letters 74 (13), 1854-1856, 1999 | 135 | 1999 |
| Effect of V/III ratio in AlN and AlGaN MOVPE AV Lobanova, KM Mazaev, RA Talalaev, M Leys, S Boeykens, K Cheng, ... Journal of crystal growth 287 (2), 601-604, 2006 | 109 | 2006 |
| Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors M Dauelsberg, C Martin, H Protzmann, AR Boyd, EJ Thrush, J Käppeler, ... Journal of crystal growth 298, 418-424, 2007 | 69 | 2007 |
| Hydrogen effects in III-nitride MOVPE EV Yakovlev, RA Talalaev, AS Segal, AV Lobanova, WV Lundin, ... Journal of Crystal Growth 310 (23), 4862-4866, 2008 | 66 | 2008 |
| On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds RA Talalaev, EV Yakovlev, SY Karpov, YN Makarov Journal of crystal growth 230 (1-2), 232-238, 2001 | 61 | 2001 |
| Novel approach to simulation of group-III nitrides growth by MOVPE SY Karpov, VG Prokofyev, EV Yakovlev, RA Talalaev, YN Makarov MRS Internet Journal of Nitride Semiconductor Research 4, 1-7, 1999 | 61 | 1999 |
| Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study AV Kondratyev, RA Talalaev, WV Lundin, AV Sakharov, AV Tsatsul’nikov, ... Journal of crystal growth 272 (1-4), 420-425, 2004 | 57 | 2004 |
| Growth conditions and surface morphology of AlN MOVPE AV Lobanova, EV Yakovlev, RA Talalaev, SB Thapa, F Scholz Journal of Crystal Growth 310 (23), 4935-4938, 2008 | 48 | 2008 |
| Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy SY Karpov, RA Talalaev, YN Makarov, N Grandjean, J Massies, ... Surface science 450 (3), 191-203, 2000 | 48 | 2000 |
| Analysis of silicon carbide growth by sublimation sandwich method SY Karpov, YN Makarov, EN Mokhov, MG Ramm, MS Ramm, ... Journal of crystal growth 173 (3-4), 408-416, 1997 | 34 | 1997 |
| Analysis of vaporization kinetics of group-III nitrides MV Averyanova, IN Przhevalskii, SY Karpov, YN Makarov, MS Ramm, ... Materials Science and Engineering: B 43 (1-3), 167-171, 1997 | 34 | 1997 |
| Theoretical model for analysis and optimization of group III-nitrides growth by molecular beam epitaxy MV Averyanova, SY Karpov, YN Makarov, IN Przhevalskii, MS Ramm, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1996 | 33 | 1996 |
| Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor® C Martin, M Dauelsberg, H Protzmann, AR Boyd, EJ Thrush, M Heuken, ... Journal of crystal growth 303 (1), 318-322, 2007 | 32 | 2007 |
| Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach M Dauelsberg, D Brien, R Püsche, O Schön, EV Yakovlev, AS Segal, ... Journal of crystal growth 315 (1), 224-228, 2011 | 28 | 2011 |
| Indium segregation kinetics in MOVPE of InGaN‐based heterostructures SY Karpov, RA Talalaev, IY Evstratov, YN Makarov physica status solidi (a) 192 (2), 417-423, 2002 | 28 | 2002 |
| High growth rate MOVPE of Al (Ga) N in planetary reactor WV Lundin, AE Nikolaev, MA Yagovkina, PN Brunkov, MM Rozhavskaya, ... Journal of crystal growth 352 (1), 209-213, 2012 | 27 | 2012 |
| Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor EV Yakovlev, RA Talalaev, YN Makarov, BS Yavich, WN Wang Journal of crystal growth 261 (2-3), 182-189, 2004 | 24 | 2004 |
| On the possible origins of low indium incorporation during MOVPE of InGaN RA Talalaev, EV Yakovlev, SY Karpov, IY Estratov, AN Vorobev, ... physica status solidi (a) 176 (1), 253-256, 1999 | 22 | 1999 |
| On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors M Dauelsberg, D Brien, H Rauf, F Reiher, J Baumgartl, O Häberlen, ... Journal of crystal growth 393, 103-107, 2014 | 21 | 2014 |
| MOVPE growth and in situ characterization of GaN layers on sapphire substrates H Hardtdegen, N Kaluza, R Schmidt, R Steins, EV Yakovlev, RA Talalaev, ... physica status solidi (a) 201 (2), 312-319, 2004 | 21 | 2004 |
