Romuald B. Beck
Romuald B. Beck
Institute of Microelectronics and Optoelectronics; Warsaw University of Technology
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Cited by
Cited by
Series resistance in a MOS capacitor with a thin gate oxide
K Iniewski, A Balasiński, B Majkusiak, RB Beck, A Jakubowski
Solid-state electronics 32 (2), 137-140, 1989
Modeling of SOI-MOS capacitors CV behavior: Partially-and fully-depleted cases
FA Ikraiam, RB Beck, A Jakubowski
IEEE Transactions on Electron Devices 45 (5), 1026-1032, 1998
Oxygen pressure as a parameter in the DC plasma anodization of silicon
RB Beck, M Patyra, J Ruzyłło, A Jakubowski
Thin Solid Films 67 (2), 261-264, 1980
Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing
R Mroczyński, N Kwietniewski, M Ćwil, P Hoffmann, RB Beck, ...
Vacuum 82 (10), 1013-1019, 2008
Formation of ultrathin silicon oxides—modeling and technological constraints
RB Beck
Materials Science in Semiconductor Processing 6 (1-3), 49-57, 2003
The initial growth rate of thermal silicon oxide
RB Beck, B Majkusiak
physica status solidi (a) 116 (1), 313-329, 1989
Effect of carbon on thermal oxidation of silicon and electrical properties of SiO2-Si structures
RB Beck, T Brozek, J Ruzyllo, SD Hossain, RE Tressler
Journal of electronic materials 22 (6), 689-694, 1993
Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices
R Mroczyński, RB Beck
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
PECVD formation of ultrathin silicon nitride layers for CMOS technology
RB Beck, M Giedz, A Wojtkiewicz, A Kudła, A Jakubowski
Vacuum 70 (2-3), 323-329, 2003
Reactive-ion-etching (RIE) process in CF4 plasma as a method of fluorine implantation
M Kalisz, RB Beck, M Ćwil
Vacuum 82 (10), 1046-1050, 2008
Reactive-ion-etching (RIE) process in CF4 plasma as a method of fluorine implantation
M Kalisz, RB Beck, M Ćwil
Vacuum 82 (10), 1046-1050, 2008
Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications
R Mroczyński, RB Beck
Microelectronics Reliability 52 (1), 107-111, 2012
Effect of radiation on breakdown of electrically pre-degraded oxides in MOS structures
T Brożek, R Wi¶niewski, RB Beck, A Jakubowski
Microelectronic Engineering 28 (1-4), 349-352, 1995
Silicon oxynitride layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) for CMOS devices
R Mroczyński, R Beck
ECS Transactions 25 (8), 797, 2009
Photoemission studies of very thin (< 10 nm) silicon oxynitride (SiOxNy) layers formed by PECVD
P Hoffmann, D Schmeißer, RB Beck, M Cuch, M Giedz, A Jakubowski
Journal of alloys and compounds 382 (1-2), 228-233, 2004
Analysis of characteristics of silicon metal/insulator/semiconductor tunnel diodes with dc-plasma-grown oxide
RB Beck, J Rużyłło
Thin solid films 136 (2), 173-180, 1986
Comparison of composition of ultra-thin silicon oxynitride layers' fabricated by PECVD and ultrashallow rf plasma ion implantation
R Mroczyński, T Bieniek, RB Beck, M Ćwil, P Konarski, P Hoffman, ...
Journal of Telecommunications and Information Technology, 20-24, 2007
Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation
T Bieniek, RB Beck, A Jakubowski, A Kudła
Journal of Telecommunications and Information Technology, 70-75, 2005
Ultrathin oxynitride films for CMOS technology
RB Beck, A Jakubowski
Journal of Telecommunications and Information Technology, 62-69, 2004
The model of growth kinetics of very thin thermal silicon oxide layer.
RB Beck, B Majkusiak
Electron Technol. 21 (1), 65-79, 1989
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