| Series resistance in a MOS capacitor with a thin gate oxide K Iniewski, A Balasiński, B Majkusiak, RB Beck, A Jakubowski Solid-state electronics 32 (2), 137-140, 1989 | 35 | 1989 |
| Modeling of SOI-MOS capacitors CV behavior: Partially-and fully-depleted cases FA Ikraiam, RB Beck, A Jakubowski IEEE Transactions on Electron Devices 45 (5), 1026-1032, 1998 | 29 | 1998 |
| Oxygen pressure as a parameter in the DC plasma anodization of silicon RB Beck, M Patyra, J Ruzyłło, A Jakubowski Thin Solid Films 67 (2), 261-264, 1980 | 20 | 1980 |
| Effect of carbon on thermal oxidation of silicon and electrical properties of SiO2-Si structures RB Beck, T Brozek, J Ruzyllo, SD Hossain, RE Tressler Journal of electronic materials 22, 689-694, 1993 | 17 | 1993 |
| The initial growth rate of thermal silicon oxide RB Beck, B Majkusiak physica status solidi (a) 116 (1), 313-329, 1989 | 17 | 1989 |
| Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing R Mroczyński, N Kwietniewski, M Ćwil, P Hoffmann, RB Beck, ... Vacuum 82 (10), 1013-1019, 2008 | 16 | 2008 |
| PECVD formation of ultrathin silicon nitride layers for CMOS technology RB Beck, M Giedz, A Wojtkiewicz, A Kudła, A Jakubowski Vacuum 70 (2-3), 323-329, 2003 | 15 | 2003 |
| Formation of ultrathin silicon oxides—modeling and technological constraints RB Beck Materials Science in Semiconductor Processing 6 (1-3), 49-57, 2003 | 15 | 2003 |
| Technologia krzemowa RB Beck Wydaw. Naukowe PWN, 1991 | 14 | 1991 |
| Reactive-ion-etching (RIE) process in CF4 plasma as a method of fluorine implantation M Kalisz, RB Beck, M Ćwil Vacuum 82 (10), 1046-1050, 2008 | 13 | 2008 |
| Reactive-ion-etching (RIE) process in CF4 plasma as a method of fluorine implantation M Kalisz, RB Beck, M Ćwil Vacuum 82 (10), 1046-1050, 2008 | 13 | 2008 |
| Passive photonic integrated circuits elements fabricated on a silicon nitride platform M Lelit, M Słowikowski, M Filipiak, M Juchniewicz, B Stonio, B Michalak, ... Materials 15 (4), 1398, 2022 | 12 | 2022 |
| Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications R Mroczyński, RB Beck Microelectronics Reliability 52 (1), 107-111, 2012 | 12 | 2012 |
| Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices R Mroczyński, RB Beck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 12 | 2009 |
| Effect of radiation on breakdown of electrically pre-degraded oxides in MOS structures T Brożek, R Wi¶niewski, RB Beck, A Jakubowski Microelectronic Engineering 28 (1-4), 349-352, 1995 | 9 | 1995 |
| Analysis of characteristics of silicon metal/insulator/semiconductor tunnel diodes with dc-plasma-grown oxide RB Beck, J Rużyłło Thin solid films 136 (2), 173-180, 1986 | 9 | 1986 |
| Silicon oxynitride layers fabricated by plasma enhanced chemical vapor deposition (PECVD) for CMOS devices R Mroczyński, R Beck ECS Transactions 25 (8), 797, 2009 | 8 | 2009 |
| Ultrathin oxynitride films for CMOS technology RB Beck Journal of Telecommunications and Information Technology, 62-69, 2004 | 7 | 2004 |
| A model for the kinetics of constant current plasma anodization process RB Beck Applied surface science 35 (1), 76-92, 1988 | 7 | 1988 |
| Comparison of composition of ultra-thin silicon oxynitride layers' fabricated by PECVD and ultrashallow rf plasma ion implantation R Mroczyński, T Bieniek, RB Beck, M Ćwil, P Konarski, P Hoffman, ... Journal of Telecommunications and Information Technology, 20-24, 2007 | 6 | 2007 |
