Eight-band k⋅ p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots J Andrzejewski, G Sęk, E O’Reilly, A Fiore, J Misiewicz
Journal of Applied Physics 107 (7), 2010
53 2010 The energy-fine structure of R Kudrawiec, EM Pavelescu, J Andrzejewski, J Misiewicz, A Gheorghiu, ...
Journal of applied physics 96 (5), 2909-2913, 2004
37 2004 Energy Band Structure of Zn3 P2 ‐Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations J Andrzejewski, J Misiewicz
physica status solidi (b) 227 (2), 515-540, 2001
36 2001 Wetting layer states of InAs∕ GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer G Sęk, K Ryczko, M Motyka, J Andrzejewski, K Wysocka, J Misiewicz, ...
Journal of Applied Physics 101 (6), 2007
34 2007 Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy A Maryński, G Sęk, A Musiał, J Andrzejewski, J Misiewicz, C Gilfert, ...
Journal of Applied Physics 114 (9), 2013
33 2013 Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures A Musiał, A Maryński, P Mrowiński, J Andrzejewski, P Machnikowski, ...
Physical Review B 90 (12), 125424, 2014
31 2014 Carrier relaxation dynamics in InAs/GaInAsP/InP (001) quantum dashes emitting near 1.55 μm M Syperek, Ł Dusanowski, J Andrzejewski, W Rudno-Rudziński, G Sȩk, ...
Applied Physics Letters 103 (8), 2013
29 2013 Influence of electronic coupling on the radiative lifetime in the (In, Ga) As/GaAs quantum dot–quantum well system M Syperek, J Andrzejewski, W Rudno-Rudziński, G Sęk, J Misiewicz, ...
Physical Review B 85 (12), 125311, 2012
29 2012 Polarization properties of columnar quantum dots: effects of aspect ratio and compositional contrast P Ridha, LH Li, M Mexis, PM Smowton, J Andrzejewski, G Sek, ...
IEEE journal of quantum electronics 46 (2), 197-204, 2009
27 2009 Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated … A Musiał, P Gold, J Andrzejewski, A Löffler, J Misiewicz, S Höfling, ...
Physical Review B 90 (4), 045430, 2014
26 2014 Height-driven linear polarization of the surface emission from quantum dashes A Musiał, P Podemski, G Sęk, P Kaczmarkiewicz, J Andrzejewski, ...
Semiconductor Science and Technology 27 (10), 105022, 2012
24 2012 Controlling the aspect ratio of quantum dots: from columnar dots to quantum rods L Li, G Patriarche, N Chauvin, P Ridha, M Rossetti, J Andrzejewski, G Sek, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1204-1213, 2008
23 2008 Electron-irradiation enhanced photoluminescence from GaInNAs∕ GaAs quantum wells subject to thermal annealing EM Pavelescu, A Gheorghiu, M Dumitrescu, A Tukiainen, T Jouhti, ...
Applied physics letters 85 (25), 6158-6160, 2004
22 2004 Optical and electronic properties of GaAs-based structures with columnar quantum dots M Motyka, G Sęk, K Ryczko, J Andrzejewski, J Misiewicz, LH Li, A Fiore, ...
Applied physics letters 90 (18), 2007
18 2007 Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕ InGaAsP quantum well laser structures emitting at 1.55 μm A Podhorodecki, J Andrzejewski, R Kudrawiec, J Misiewicz, J Wojcik, ...
Journal of applied physics 100 (1), 2006
16 2006 Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ...
physica status solidi (a) 215 (4), 1700455, 2018
15 2018 Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission W Rudno-Rudziński, M Syperek, J Andrzejewski, A Maryński, J Misiewicz, ...
AIP Advances 7 (1), 2017
15 2017 Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP (001) coupled quantum dots-quantum well structure emitting at 1.55 μm M Syperek, J Andrzejewski, E Rogowicz, J Misiewicz, S Bauer, ...
Applied Physics Letters 112 (22), 2018
14 2018 On optimizing Jacobi–Davidson method for calculating eigenvalues in low dimensional structures using eight band k· p model J Andrzejewski
Journal of Computational Physics 249, 22-35, 2013
13 2013 Electronic structure and optical properties of 1.55 µm emitting InAs/InGaAsP quantum dash tunnel injection structures W Rudno-Rudziński, G Sęk, J Andrzejewski, J Misiewicz, F Lelarge, ...
Semiconductor Science and Technology 27 (10), 105015, 2012
12 2012 