| Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods LC Tien, PW Sadik, DP Norton, LF Voss, SJ Pearton, HT Wang, BS Kang, ... Applied Physics Letters 87 (22), 2005 | 354 | 2005 |
| High aspect ratio composite structures with 48.5% thermal neutron detection efficiency Q Shao, LF Voss, AM Conway, RJ Nikolic, MA Dar, CL Cheung Applied Physics Letters 102 (6), 2013 | 79 | 2013 |
| Characterization of bulk GaN rectifiers for hydrogen gas sensing L Voss, BP Gila, SJ Pearton, HT Wang, F Ren Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 49 | 2005 |
| SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices LF Voss, K Ip, SJ Pearton, RJ Shul, ME Overberg, AG Baca, C Sanchez, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 34 | 2008 |
| Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO W Lim, L Voss, R Khanna, BP Gila, DP Norton, SJ Pearton, F Ren Applied Surface Science 253 (3), 1269-1273, 2006 | 31 | 2006 |
| A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes J Jun, B Chou, J Lin, A Phipps, X Shengwen, K Ngo, D Johnson, ... Solid-state electronics 51 (7), 1018-1022, 2007 | 28 | 2007 |
| A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes J Jun, B Chou, J Lin, A Phipps, X Shengwen, K Ngo, D Johnson, ... Solid-state electronics 51 (7), 1018-1022, 2007 | 28 | 2007 |
| Fabrication methodology of enhanced stability room temperature TlBr gamma detectors AM Conway, LF Voss, AJ Nelson, PR Beck, TA Laurence, RT Graff, ... IEEE Transactions on Nuclear Science 60 (2), 1231-1236, 2013 | 26 | 2013 |
| A total internal reflection photoconductive switch M Bora, LF Voss, PV Grivickas, DL Hall, JB Alameda, NJ Kramer, ... IEEE Electron Device Letters 40 (5), 734-737, 2019 | 24 | 2019 |
| Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN LF Voss, L Stafford, R Khanna, BP Gila, CR Abernathy, SJ Pearton, F Ren, ... Applied physics letters 90 (21), 2007 | 24 | 2007 |
| Ultradeep electron cyclotron resonance plasma etching of GaN SE Harrison, LF Voss, AM Torres, CD Frye, Q Shao, RJ Nikolić Journal of Vacuum Science & Technology A 35 (6), 2017 | 23 | 2017 |
| Solution-grown rubrene crystals as radiation detecting devices L Carman, HP Martinez, L Voss, S Hunter, P Beck, N Zaitseva, SA Payne, ... IEEE Transactions on Nuclear Science 64 (2), 781-788, 2017 | 23 | 2017 |
| Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries W Lim, L Voss, R Khanna, BP Gila, DP Norton, SJ Pearton, F Ren Applied Surface Science 253 (2), 889-894, 2006 | 23 | 2006 |
| Improved long-term thermal stability of InGaN∕ GaN multiple quantum well light-emitting diodes using TiB2-and Ir-based p-Ohmic contacts L Stafford, LF Voss, SJ Pearton, HT Wang, F Ren Applied Physics Letters 90 (24), 2007 | 21 | 2007 |
| Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO JS Wright, R Khanna, LF Voss, L Stafford, BP Gila, DP Norton, SJ Pearton, ... Applied surface science 253 (8), 3766-3772, 2007 | 21 | 2007 |
| Improved thermally stable ohmic contacts on p-GaN based on W2B L Voss, R Khanna, SJ Pearton, F Ren, I Kravchenko Applied physics letters 88 (1), 2006 | 21 | 2006 |
| Photoconductive switch with high sub-bandgap responsivity in nitrogen-doped diamond DL Hall, LF Voss, P Grivickas, M Bora, AM Conway, P Ščajev, V Grivickas IEEE Electron Device Letters 41 (7), 1070-1073, 2020 | 20 | 2020 |
| Stress reduction for pillar filled structures RJ Nikolic, A Conway, Q Shao, L Voss, CL Cheung, MA Dar US Patent 9,121,947, 2015 | 20 | 2015 |
| Design considerations for three-dimensional betavoltaics JW Murphy, LF Voss, CD Frye, Q Shao, K Kazkaz, MA Stoyer, ... AIP Advances 9 (6), 2019 | 19 | 2019 |
| Schottky barrier height of boride-based rectifying contacts to p-GaN L Stafford, LF Voss, SJ Pearton, JJ Chen, F Ren Applied physics letters 89 (13), 2006 | 19 | 2006 |
Qinghui ShaoLawrence Livermore National LabZweryfikowany adres z llnl.gov
