| Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al A Taube, E Kamińska, M Kozubal, J Kaczmarski, W Wojtasiak, J Jasiński, ... physica status solidi (a) 212 (5), 1162-1169, 2015 | 47 | 2015 |
| Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates M Ficek, M Sobaszek, M Gnyba, J Ryl, M Smietana, J Jasiński, P Caban, ... Applied Surface Science 387, 846-856, 2016 | 45 | 2016 |
| Interlayer excitons in MoSe 2/2D perovskite hybrid heterostructures–the interplay between charge and energy transfer M Karpińska, J Jasiński, R Kempt, JD Ziegler, H Sansom, T Taniguchi, ... Nanoscale 14 (22), 8085-8095, 2022 | 12 | 2022 |
| Small-signal admittance model as a characterization tool of the MOS tunnel diode J Jasiński, B Majkusiak Journal of Vacuum Science & Technology B 31 (1), 2013 | 11 | 2013 |
| Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy … P Wiśniewski, J Jasiński, A Mazurak, B Stonio, B Majkusiak Materials 14 (20), 6042, 2021 | 10 | 2021 |
| Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers A Mazurak, R Mroczyński, J Jasiński, D Tanous, B Majkusiak, S Kano, ... Microelectronic Engineering 178, 298-303, 2017 | 10 | 2017 |
| Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures J Jasiński, A Mazurak, R Mroczyński, B Majkusiak Microelectronic Engineering 147, 349-353, 2015 | 6 | 2015 |
| Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane J Jasiński, A Balgarkashi, V Piazza, D Dede, A Surrente, M Baranowski, ... 2D Materials 9 (4), 045006, 2022 | 5 | 2022 |
| Effect of nanocrystal geometric location on tunnel currents and small‐signal admittance of MIS structures A Mazurak, J Jasiński, B Majkusiak physica status solidi (c) 13 (10‐12), 1035-1039, 2016 | 5 | 2016 |
| Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices P Wiśniewski, M Nieborek, A Mazurak, J Jasiński Micromachines 13 (10), 1641, 2022 | 4 | 2022 |
| Optical properties of site-selectively grown inas/inp quantum dots with predefined positioning by block copolymer lithography P Holewa, J Jasiński, A Shikin, E Lebedkina, A Maryński, M Syperek, ... Materials 14 (2), 391, 2021 | 4 | 2021 |
| High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation A Taube, M Kozubal, J Kaczmarski, M Juchniewicz, A Barcz, J Dyczewski, ... MRS Online Proceedings Library 1635, 9-14, 2014 | 4 | 2014 |
| Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS₂ Using a GaAs Nanowire Array A Balgarkashi, V Piazza, J Jasiński, R Frisenda, A Surrente, ... IEEE Journal of Quantum Electronics 58 (4), 1-8, 2022 | 3 | 2022 |
| Double gate dielectric stacks with Gd2O3 layer for application in NVSM devices R Mroczyński, J Jasiński, H Gottlob, M Schmidt Microelectronic engineering 115, 61-65, 2014 | 3 | 2014 |
| Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure J Jasiński, A Mazurak, B Majkusiak Microelectronic engineering 109, 1-4, 2013 | 3 | 2013 |
| Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs KP Korona, J Jasiński, A Kurpiewski, M Kamińska, C Jagadish, HH Tan, ... Acta Physica Polonica A 90 (4), 851-854, 1996 | 3 | 1996 |
| Crystallographic Properties of Bulk GaN Crystals Grown at High Pressure M Leszczyński, I Grzegory, M Bockowski, J Jun, S Porowski, J Jasiński, ... Acta Physica Polonica A 88 (4), 799-802, 1995 | 3 | 1995 |
| Antisites defects in GaP J Jasiński, M Kamińska, M Palczewska, P Jurkiewicz-Wagner Acta Physica Polonica A 84 (3), 579-582, 1993 | 3 | 1993 |
| Conductance modulation in Al/SiO2/n-Si MIS resistive switching structures P Wiśniewski, J Jasiński, A Mazurak 2021 Joint International EUROSOI Workshop and International Conference on …, 2021 | 2 | 2021 |
| Vertical GaN schottky diodes grown on highly conductive Ammono-GaN substrate P Kruszewski, P Prystawko, M Grabowski, T Sochacki, A Sidor, ... Acta Physica Polonica A 134 (4), 969-972, 2018 | 2 | 2018 |
