| Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ... physica status solidi (b) 229 (3), r1-r3, 2002 | 1418 | 2002 |
| Tamm plasmon polaritons: Slow and spatially compact light ME Sasin, RP Seisyan, MA Kalitteevski, S Brand, RA Abram, ... Applied physics letters 92 (25), 2008 | 436 | 2008 |
| Nanolithography in microelectronics: A review RP Seisyan Technical Physics 56, 1061-1073, 2011 | 171 | 2011 |
| Phys. Status Solidi B https://doi. org/10.1002/1521-3951 (200202) 229: 3< R1:: AID-PSSB99991> 3.0. CO; 2-O 229 VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ... R1, 2002 | 119 | 2002 |
| RETRACTED: Tamm plasmon-polaritons: First experimental observation ME Sasin, RP Seisyan, MA Kaliteevski, S Brand, RA Abram, ... Superlattices and Microstructures 47 (1), 44-49, 2010 | 105 | 2010 |
| Спектроскопия диамагнитных экситонов РП Сейсян ФМЛ, 1984 | 68 | 1984 |
| Spectroscopy of diamagnetic excitons RP Seisyan Science, Moscow, 1984 | 59 | 1984 |
| Exciton-polariton light absorption in bulk GaAs and semiconductor superlattices VA Kosobukin, RP Seisyan, SA Vaganov Semiconductor science and technology 8 (7), 1235, 1993 | 57 | 1993 |
| Нанолитография в микроэлектронике (Обзор) РП Сейсян Журнал технической физики 81 (8), 1-14, 2011 | 44 | 2011 |
| Нанолитография СБИС в экстремально дальнем вакуумном ультрафиолете (Обзор) Р Сейсян Журнал технической физики 75 (5), 1-13, 2005 | 44 | 2005 |
| Exciton in a semiconductor quantum well subjected to a strong magnetic field AV KRAVOKIN, AI Nesvizhskii, RP Seisyan Semiconductors (Woodbury, NY) 27 (6), 530-536, 1993 | 39 | 1993 |
| Absorption and emission of hexagonal InN. evidence of narrow fundamental band V Yu Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ... Gap Phys Status Solidi (b) 229, R1, 2002 | 37 | 2002 |
| Extreme ultraviolet nanolithography for ULSI: A review RP Seisyan Technical physics 50, 535-545, 2005 | 36 | 2005 |
| Diamagnetic excitons and exciton magnetopolaritons in semiconductors RP Seisyan Semiconductor Science and Technology 27 (5), 053001, 2012 | 29 | 2012 |
| Observation of the Exciton Structure of the Fundamental Absorption Edge of InAs Crystals AV Varfolomeev, RP Seisyan, RN Yakimova Soviet Physics-Semiconductors 9 (4), 530, 1975 | 26 | 1975 |
| High-temperature effectiveness limit of exciton-polariton processes in cadmium and zinc telluride crystals GN Aliev, OS Koshchug, RP Seisyan Physics of the Solid State 36 (2), 203-211, 1994 | 24 | 1994 |
| Structure of the absorption edge of cubic cadmium and zinc chalcogenides GN Aliev, NP Gavaleshko, OS Koshchug, VI Pleshko, RP Selsyan SOVIET PHYSICS SOLID STATE C/C OF FIZIKA TVERDOGO TELA 34, 1286-1286, 1992 | 24 | 1992 |
| Two-dimensional photonic crystal fabrication using fullerene films ME Gaevski, SO Kognovitskii, SG Konnikov, AV Nashchekin, SI Nesterov, ... Nanotechnology 11 (4), 270, 2000 | 23 | 2000 |
| Exciton‐Polariton Behaviour of the Absorption Edge of Thin GaAs Crystals with the “Super‐Quantum” Thickness and MQW Enlarged Barriers GN Aliev, NV Lukyanova, RP Seisyan, MR Vladimirova, H Gibbs, ... physica status solidi (a) 164 (1), 193-197, 1997 | 22 | 1997 |
| The excitonic structure of absorption and magnetoabsorption spectra near the type I-II transition in strained (In, Ga) As/GaAs heterostructures RP Seisyan, AV Kavokin, SI Kokhanovskii, AI Nesvizhskii, ME Sasin, ... Semiconductor science and technology 10 (5), 611, 1995 | 21 | 1995 |
