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Edward A. Jones
Edward A. Jones
Zweryfikowany adres z infineon.com
Tytuł
Cytowane przez
Cytowane przez
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Review of commercial GaN power devices and GaN-based converter design challenges
EA Jones, FF Wang, D Costinett
IEEE journal of emerging and selected topics in power electronics 4 (3), 707-719, 2016
10792016
Methodology for wide band-gap device dynamic characterization
Z Zhang, B Guo, FF Wang, EA Jones, LM Tolbert, BJ Blalock
IEEE Transactions on Power Electronics 32 (12), 9307-9318, 2017
2502017
Application-based review of GaN HFETs
EA Jones, F Wang, B Ozpineci
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 24-29, 2014
1882014
Characterization of an enhancement-mode 650-V GaN HFET
EA Jones, F Wang, D Costinett, Z Zhang, B Guo, B Liu, R Ren
2015 IEEE Energy Conversion Congress and Exposition (ECCE), 400-407, 2015
1312015
Design and Implementation of a GaN-Based, 100-kHz, 102-W/in3 Single-Phase Inverter
C Zhao, B Trento, L Jiang, EA Jones, B Liu, Z Zhang, D Costinett, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 824-840, 2016
1092016
Circulating current suppressing control’s impact on arm inductance selection for modular multilevel converter
Y Li, EA Jones, F Wang
IEEE Journal of Emerging and Selected Topics in Power Electronics 5 (1), 182-188, 2016
902016
Cross conduction analysis for enhancement-mode 650-V GaN HFETs in a phase-leg topology
EA Jones, F Wang, D Costinett, Z Zhang, B Guo
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
702015
Capacitor-clamped, three-level GaN-based DC–DC converter with dual voltage outputs for battery charger applications
R Ren, B Liu, EA Jones, FF Wang, Z Zhang, D Costinett
IEEE Journal of Emerging and selected topics in Power Electronics 4 (3), 841-853, 2016
662016
Temperature-dependent turn-on loss analysis for GaN HFETs
EA Jones, F Wang, D Costinett, Z Zhang, B Guo
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 1010-1017, 2016
522016
Characterization of wide bandgap power semiconductor devices
FF Wang, Z Zhang, EA Jones
(No Title), 2018
512018
A modulation compensation scheme to reduce input current distortion in GaN-based high switching frequency three-phase three-level Vienna-type rectifiers
B Liu, R Ren, EA Jones, F Wang, D Costinett, Z Zhang
IEEE Transactions on Power Electronics 33 (1), 283-298, 2017
482017
The impact of voltage-balancing control on switching frequency of the modular multilevel converter
Y Li, EA Jones, F Wang
IEEE Transactions on Power Electronics 31 (4), 2829-2839, 2015
482015
Accurate ZVS boundary in high switching frequency LLC converter
R Ren, B Liu, EA Jones, F Wang, Z Zhang, D Costinett
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2016
422016
Effects of junction capacitances and commutation loops associated with line-frequency devices in three-level ac/dc converters
B Liu, R Ren, EA Jones, H Gui, Z Zhang, R Chen, F Wang, D Costinett
IEEE Transactions on Power Electronics 34 (7), 6155-6170, 2018
312018
A fast overcurrent protection scheme for GaN GITs
EA Jones, P Williford, F Wang
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
312017
Review and characterization of gallium nitride power devices
EA Jones
292016
Analysis of the dv/dt transient of enhancement-mode GaN FETs
EA Jones, Z Zhang, F Wang
2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2692-2699, 2017
272017
High-power-density GaN-based converters: Thermal management considerations
EA Jones, M de Rooij
IEEE Power Electronics Magazine 6 (4), 22-29, 2019
242019
Hard-Switching Dynamic Rds,on Characterization of a GaN FET with an Active GaN-Based Clamping Circuit
EA Jones, A Pozo
2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2757-2763, 2019
242019
Optimal dead-time setting and loss analysis for GaN-based voltage source converter
P Williford, EA Jones, Z Yang, J Chen, F Wang, S Bala, J Xu
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 898-905, 2018
222018
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