Gilberto A Umana-Membreno
Gilberto A Umana-Membreno
Zweryfikowany adres z uwa.edu.au
Tytuł
Cytowane przez
Cytowane przez
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60Co gamma irradiation effects on n-GaN Schottky diodes
GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ...
Electron Devices, IEEE Transactions on 50 (12), 2326-2334, 2003
101*2003
Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances
R Menozzi, GA Umana-Membreno, BD Nener, G Parish, G Sozzi, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 255-264, 2008
912008
60Co gamma-irradiation-induced defects in n-GaN
GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ...
Applied physics letters 80 (23), 4354-4356, 2002
612002
Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy
TB Fehlberg, GA Umana-Membreno, BD Nener, G Parish, CS Gallinat, ...
Japanese journal of applied physics 45, L1090-L1092, 2006
522006
Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices
GA Umana-Membreno, B Klein, H Kala, J Antoszewski, N Gautam, ...
Applied Physics Letters 101 (25), 253515-253515-4, 2012
462012
Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors
M Kopytko, J Wróbel, K Jóźwikowski, A Rogalski, J Antoszewski, ...
Journal of Electronic Materials 44 (1), 158-166, 2015
392015
Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
A Podolska, M Kocan, AMG Cabezas, TD Wilson, GA Umana-Membreno, ...
Applied Physics Letters 97 (1), 012108-012108-3, 2010
362010
A method of removing the valence band discontinuity in HgCdTe-based nBn detectors
ND Akhavan, GA Umana-Membreno, G Jolley, J Antoszewski, L Faraone
Applied Physics Letters 105 (12), 121110, 2014
322014
Electrically active defects in GaN layers grown with and without Fe-doped buffers by metal-organic chemical vapor deposition
GA Umana-Membreno, G Parish, N Fichtenbaum, S Keller, UK Mishra, ...
Journal of Electronic Materials 37 (5), 569-572, 2008
322008
Investigation of Multicarrier Transport in LPE-Grown Hg1− x Cd x Te Layers
GA Umana-Membreno, J Antoszewski, L Faraone, EPG Smith, GM Venzor, ...
Journal of Electronic Materials 39 (7), 1023-1029, 2010
312010
High-resolution mobility spectrum analysis of multicarrier transport in advanced infrared materials
J Antoszewski, GA Umana-Membreno, L Faraone
Journal of electronic materials 41 (10), 2816-2823, 2012
292012
Mercury (II) selective sensors based on AlGaN/GaN transistors
M Asadnia, M Myers, ND Akhavan, K O'Donnell, GA Umana-Membreno, ...
Analytica Chimica Acta, 2016
262016
Design of band engineered HgCdTe nBn detectors for MWIR and LWIR applications
ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone
IEEE Transactions on Electron Devices 62 (3), 722-728, 2015
252015
Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
M Myers, FLM Khir, A Podolska, GA Umana-Membreno, B Nener, M Baker, ...
Sensors and Actuators B: Chemical 181, 301-305, 2013
242013
Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
GA Umana-Membreno, H Kala, J Antoszewski, ZH Ye, WD Hu, RJ Ding, ...
Journal of Electronic Materials 42 (11), 3108-3113, 2013
232013
Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation
ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone
Journal of Applied Physics 112 (9), 094505, 2012
222012
Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs
GA Umana-Membreno, JM Dell, BD Nener, L Faraone, G Parish, YF Wu, ...
1998 Conference on Optoelectronic and Microelectronic Materials and Devices …, 1998
221998
Theoretical Study of midwave infrared HgCdTe nBn detectors operating at elevated temperatures
ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone
Journal of Electronic Materials 44 (9), 3044-3055, 2015
202015
Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable With Variable SiNx Passivation Stress
TB Fehlberg, JS Milne, GA Umana-Membreno, S Keller, UK Mishra, ...
Electron Devices, IEEE Transactions on 58 (8), 2589-2596, 2011
18*2011
Optimization of Superlattice Barrier HgCdTe nBn Infrared Photodetectors Based on an NEGF Approach
ND Akhavan, GA Umana-Membreno, R Gu, J Antoszewski, L Faraone
IEEE Transactions on Electron Devices 65 (2), 591-598, 2018
162018
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