| 60Co gamma irradiation effects on n-GaN Schottky diodes GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ... Electron Devices, IEEE Transactions on 50 (12), 2326-2334, 2003 | 101* | 2003 |
| Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances R Menozzi, GA Umana-Membreno, BD Nener, G Parish, G Sozzi, ... IEEE Transactions on Device and Materials Reliability 8 (2), 255-264, 2008 | 91 | 2008 |
| 60Co gamma-irradiation-induced defects in n-GaN GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ... Applied physics letters 80 (23), 4354-4356, 2002 | 61 | 2002 |
| Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy TB Fehlberg, GA Umana-Membreno, BD Nener, G Parish, CS Gallinat, ... Japanese journal of applied physics 45, L1090-L1092, 2006 | 52 | 2006 |
| Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices GA Umana-Membreno, B Klein, H Kala, J Antoszewski, N Gautam, ... Applied Physics Letters 101 (25), 253515-253515-4, 2012 | 46 | 2012 |
| Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors M Kopytko, J Wróbel, K Jóźwikowski, A Rogalski, J Antoszewski, ... Journal of Electronic Materials 44 (1), 158-166, 2015 | 39 | 2015 |
| Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices A Podolska, M Kocan, AMG Cabezas, TD Wilson, GA Umana-Membreno, ... Applied Physics Letters 97 (1), 012108-012108-3, 2010 | 36 | 2010 |
| A method of removing the valence band discontinuity in HgCdTe-based nBn detectors ND Akhavan, GA Umana-Membreno, G Jolley, J Antoszewski, L Faraone Applied Physics Letters 105 (12), 121110, 2014 | 32 | 2014 |
| Electrically active defects in GaN layers grown with and without Fe-doped buffers by metal-organic chemical vapor deposition GA Umana-Membreno, G Parish, N Fichtenbaum, S Keller, UK Mishra, ... Journal of Electronic Materials 37 (5), 569-572, 2008 | 32 | 2008 |
| Investigation of Multicarrier Transport in LPE-Grown Hg1− x Cd x Te Layers GA Umana-Membreno, J Antoszewski, L Faraone, EPG Smith, GM Venzor, ... Journal of Electronic Materials 39 (7), 1023-1029, 2010 | 31 | 2010 |
| High-resolution mobility spectrum analysis of multicarrier transport in advanced infrared materials J Antoszewski, GA Umana-Membreno, L Faraone Journal of electronic materials 41 (10), 2816-2823, 2012 | 29 | 2012 |
| Mercury (II) selective sensors based on AlGaN/GaN transistors M Asadnia, M Myers, ND Akhavan, K O'Donnell, GA Umana-Membreno, ... Analytica Chimica Acta, 2016 | 26 | 2016 |
| Design of band engineered HgCdTe nBn detectors for MWIR and LWIR applications ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone IEEE Transactions on Electron Devices 62 (3), 722-728, 2015 | 25 | 2015 |
| Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode M Myers, FLM Khir, A Podolska, GA Umana-Membreno, B Nener, M Baker, ... Sensors and Actuators B: Chemical 181, 301-305, 2013 | 24 | 2013 |
| Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe GA Umana-Membreno, H Kala, J Antoszewski, ZH Ye, WD Hu, RJ Ding, ... Journal of Electronic Materials 42 (11), 3108-3113, 2013 | 23 | 2013 |
| Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone Journal of Applied Physics 112 (9), 094505, 2012 | 22 | 2012 |
| Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs GA Umana-Membreno, JM Dell, BD Nener, L Faraone, G Parish, YF Wu, ... 1998 Conference on Optoelectronic and Microelectronic Materials and Devices …, 1998 | 22 | 1998 |
| Theoretical Study of midwave infrared HgCdTe nBn detectors operating at elevated temperatures ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone Journal of Electronic Materials 44 (9), 3044-3055, 2015 | 20 | 2015 |
| Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable With Variable SiNx Passivation Stress TB Fehlberg, JS Milne, GA Umana-Membreno, S Keller, UK Mishra, ... Electron Devices, IEEE Transactions on 58 (8), 2589-2596, 2011 | 18* | 2011 |
| Optimization of Superlattice Barrier HgCdTe nBn Infrared Photodetectors Based on an NEGF Approach ND Akhavan, GA Umana-Membreno, R Gu, J Antoszewski, L Faraone IEEE Transactions on Electron Devices 65 (2), 591-598, 2018 | 16 | 2018 |
Lorenzo FaraoneProfessor, University of Western AustraliaZweryfikowany adres z uwa.edu.au
