| Oxidation of GaN (0001) by low-energy ion bombardment M Grodzicki, P Mazur, S Zuber, J Brona, A Ciszewski Applied surface science 304, 20-23, 2014 | 39 | 2014 |
| XPS studies on the role of arsenic incorporated into GaN M Grodzicki, JG Rousset, P Ciechanowicz, E Piskorska-Hommel, ... Vacuum 167, 73-76, 2019 | 28 | 2019 |
| Temperature sensitivity modulation through changing the vanadium concentration in a La 2 MgTiO 6: V 5+, Cr 3+ double perovskite optical thermometer D Stefańska, B Bondzior, THQ Vu, M Grodzicki, PJ Dereń Dalton Transactions 50 (28), 9851-9857, 2021 | 25 | 2021 |
| Changes of electronic properties of p-GaN (0 0 0 1) surface after low-energy N+-ion bombardment M Grodzicki, P Mazur, A Ciszewski Applied Surface Science 440, 547-552, 2018 | 24 | 2018 |
| Effect of annealing on Ni/GaN (0 0 0 1) contact morphology M Grodzicki, P Mazur, S Zuber, J Pers, J Brona, A Ciszewski Applied surface science 304, 24-28, 2014 | 23 | 2014 |
| Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001) M Grodzicki, P Mazur, J Pers, J Brona, S Zuber, A Ciszewski Applied Physics A 120, 1443-1451, 2015 | 22 | 2015 |
| Studies of early stages of Mn/GaN (0001) interface formation using surface-sensitive techniques M Grodzicki, P Mazur, A Krupski, A Ciszewski Vacuum 153, 12-16, 2018 | 19 | 2018 |
| Modification of Electronic Structure of n-GaN (0001) Surface by N⁺-Ion Bombardment M Grodzicki, P Mazur, A Ciszewski Acta Physica Polonica A 132 (2), 351-353, 2017 | 17 | 2017 |
| Pd/GaN (0001) interface properties M Grodzicki, P Mazur, S Zuber, J Pers, A Ciszewski Materials Science-Poland 32, 252-256, 2014 | 16 | 2014 |
| Interface formation of Al2O3 on carbon enriched 6H-SiC (0001): Photoelectron spectroscopy studies R Lewandków, M Grodzicki, P Mazur, A Ciszewski Vacuum 177, 109345, 2020 | 14 | 2020 |
| Empty core screw dislocations formed on 6H–SiC (0001) during hydrogen etching M Grodzicki, P Mazur, S Zuber, G Urbanik, A Ciszewski Thin Solid Films 516 (21), 7530-7537, 2008 | 14 | 2008 |
| Interface formation of Al2O3 on n‐GaN(0001): Photoelectron spectroscopy studies R Lewandków, M Grodzicki, P Mazur, A Ciszewski Surface and Interface Analysis 53 (1), 118-124, 2021 | 13 | 2021 |
| Bistable Fermi level pinning and surface photovoltage in GaN M Grodzicki, K Moszak, D Hommel, GR Bell Applied Surface Science 533, 147416, 2020 | 13 | 2020 |
| Ru/GaN (0001) interface properties R Wasielewski, M Grodzicki, J Sito, K Lament, P Mazur, A Ciszewski Acta Physica Polonica A 132 (2), 354-357, 2017 | 13 | 2017 |
| Surface studies of physicochemical properties of As films on GaN (0001) M Grodzicki, JG Rousset, P Ciechanowicz, E Piskorska-Hommel, ... Applied Surface Science 493, 384-388, 2019 | 12 | 2019 |
| MnGa and (Mn, Ga) N-like alloy formation during annealing of Mn/GaN (0001) interface M Grodzicki, P Mazur, J Brona, A Ciszewski Applied Surface Science 481, 790-794, 2019 | 10 | 2019 |
| Sb layers on p-GaN: UPS, XPS and LEED study M Grodzicki, P Mazur, J Pers, S Zuber, A Ciszewski Acta Physica Polonica A 126 (5), 1128-1130, 2014 | 10 | 2014 |
| Impact of surface photovoltage on photoemission from Ni/p-GaN M Grodzicki, P Mazur, A Sabik Applied Surface Science 512, 145643, 2020 | 9 | 2020 |
| Electronic properties of p-GaN co-doped with Mn by thermal process: Surface studies M Grodzicki, P Mazur, A Sabik Surface Science 689, 121460, 2019 | 9 | 2019 |
| As-related stability of the band gap temperature dependence in N-rich GaNAs E Zdanowicz, P Ciechanowicz, K Opolczynska, D Majchrzak, JG Rousset, ... Applied Physics Letters 115 (9), 2019 | 9 | 2019 |
