Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ...
Nature communications 3 (1), 780, 2012
1120 2012 Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena
Applied Physics Letters 91 (9), 2007
822 2007 Tumor-derived exosomal miR-1247-3p induces cancer-associated fibroblast activation to foster lung metastasis of liver cancer T Fang, H Lv, G Lv, T Li, C Wang, Q Han, L Yu, B Su, L Guo, S Huang, ...
Nature communications 9 (1), 191, 2018
788 2018 InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
417 2012 Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors A Konar, T Fang, D Jena
Physical Review B 82 (11), 115452, 2010
361 2010 Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering T Fang, A Konar, H Xing, D Jena
Physical Review B 78 (20), 205403, 2008
316 2008 Graphene nanoribbon tunnel transistors Q Zhang, T Fang, H Xing, A Seabaugh, D Jena
IEEE Electron Device Letters 29 (12), 1344-1346, 2008
294 2008 Unique prospects for graphene-based terahertz modulators B Sensale-Rodriguez, T Fang, R Yan, MM Kelly, D Jena, L Liu
Applied Physics Letters 99 (11), 2011
246 2011 High-field transport in two-dimensional graphene T Fang, A Konar, H Xing, D Jena
Physical Review B 84 (12), 125450, 2011
153 2011 Effect of optical phonon scattering on the performance of GaN transistors T Fang, R Wang, H Xing, S Rajan, D Jena
IEEE Electron Device Letters 33 (5), 709-711, 2012
133 2012 Studies of intrinsic hot phonon dynamics in suspended graphene by transient absorption microscopy B Gao, G Hartland, T Fang, M Kelly, D Jena, H Xing, L Huang
Nano Letters 11 (8), 3184-3189, 2011
131 2011 Zener tunneling in semiconducting nanotube and graphene nanoribbon p− n junctions D Jena, T Fang, Q Zhang, H Xing
Applied Physics Letters 93 (11), 2008
123 2008 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
IEEE Electron device letters 32 (9), 1215-1217, 2011
95 2011 Enhancement-Mode InAlN/AlN/GaN HEMTs With R Wang, P Saunier, Y Tang, T Fang, X Gao, S Guo, G Snider, P Fay, ...
IEEE electron device letters 32 (3), 309-311, 2011
90 2011 Quantum transport in graphene nanoribbons patterned by metal masks C Lian, K Tahy, T Fang, G Li, HG Xing, D Jena
Applied Physics Letters 96 (10), 2010
62 2010 Charge transport in non-polar and semi-polar III-V nitride heterostructures A Konar, A Verma, T Fang, P Zhao, R Jana, D Jena
Semiconductor Science and Technology 27 (2), 024018, 2012
45 2012 Charged basal stacking fault scattering in nitride semiconductors A Konar, T Fang, N Sun, D Jena
Applied Physics Letters 98 (2), 2011
28 2011 Numerical simulation of copper migration in single crystal CdTe D Guo, T Fang, A Moore, D Brinkman, R Akis, D Krasikov, I Sankin, ...
IEEE Journal of Photovoltaics 6 (5), 1286-1291, 2016
24 2016 Structural and chemical characterization of the back contact region in high efficiency CdTe solar cells A Abbas, DM Meysing, J Li, JD Beach, TM Barnes, JM Walls, CA Wolden
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-6, 2015
23 2015 Self-consistent simulation of CdTe solar cells with active defects D Brinkman, D Guo, R Akis, C Ringhofer, I Sankin, T Fang, D Vasileska
Journal of Applied Physics 118 (3), 2015
21 2015 