Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ...
Journal of Applied Physics 110 (12), 124518, 2011
540 2011 Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures M Lanza, K Zhang, M Porti, M Nafria, ZY Shen, LF Liu, JF Kang, D Gilmer, ...
Applied Physics Letters 100 (12), 123508, 2012
228 2012 Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich
Applied Physics Letters 101 (19), 193502, 2012
202 2012 Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 19.6. 1-19.6. 4, 2010
163 2010 Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
154 2011 Electrical characterization of stressed and broken down films at a nanometer scale using a conductive atomic force microscope M Porti, M Nafrıa, X Aymerich, A Olbrich, B Ebersberger
Journal of applied physics 91 (4), 2071-2079, 2002
139 2002 Grain boundary mediated leakage current in polycrystalline HfO2 films K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker
Microelectronic Engineering 88 (7), 1272-1275, 2011
123 2011 Leakage current through the poly-crystalline HfO2 : Trap densities at grains and grain boundaries O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker
Journal of Applied Physics 114 (13), 134503, 2013
89 2013 Nanometer-scale electrical characterization of stressed ultrathin films using conducting atomic force microscopy M Porti, M Nafrıa, X Aymerich, A Olbrich, B Ebersberger
Applied Physics Letters 78 (26), 4181-4183, 2001
72 2001 Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures V Iglesias, M Porti, M Nafría, X Aymerich, P Dudek, T Schroeder, ...
Applied Physics Letters 97 (26), 262906, 2010
71 2010 Graphene‐Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization M Lanza, A Bayerl, T Gao, M Porti, M Nafria, GY Jing, YF Zhang, ZF Liu, ...
Advanced Materials 25 (10), 1440-1444, 2013
70 2013 Tuning graphene morphology by substrate towards wrinkle-free devices: experiment and simulation M Lanza, Y Wang, A Bayerl, T Gao, M Porti, M Nafria, H Liang, G Jing, ...
Journal of Applied Physics 113 (10), 104301, 2013
68 2013 Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 213504, 2011
60 2011 Current limited stresses of SiO/sub 2/gate oxides with conductive atomic force microscope M Porti, M Nafria, X Aymerich
IEEE Transactions on Electron Devices 50 (4), 933-940, 2003
56 2003 Degradation of polycrystalline HfO2 -based gate dielectrics under nanoscale electrical stress V Iglesias, M Lanza, K Zhang, A Bayerl, M Porti, M Nafría, X Aymerich, ...
Applied physics letters 99 (10), 103510, 2011
51 2011 Nanometer-scale analysis of current limited stresses impact on SiO/sub 2/gate oxide reliability using C-AFM M Porti, M Nafria, X Aymerich
IEEE transactions on nanotechnology 3 (1), 55-60, 2004
51 2004 Electrical and mechanical performance of graphene sheets exposed to oxidative environments M Lanza, Y Wang, T Gao, A Bayerl, M Porti, M Nafria, Y Zhou, G Jing, ...
Nano Research 6 (7), 485-495, 2013
48 2013 Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces M Lanza, M Porti, M Nafría, X Aymerich, E Whittaker, B Hamilton
Review of Scientific Instruments 81 (10), 106110, 2010
47 2010 Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy V Iglesias, M Porti, M Nafría, X Aymerich, P Dudek, G Bersuker
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
45 2011 UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre-and post-breakdown electrical measurements M Lanza, M Porti, M Nafría, X Aymerich, E Whittaker, B Hamilton
Microelectronics Reliability 50 (9-11), 1312-1315, 2010
45 2010