Łukasz Kubiszyn
Łukasz Kubiszyn
Vigo System S.A.
Zweryfikowany adres z vigo.com.pl
Tytuł
Cytowane przez
Cytowane przez
Rok
Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
K Michalczewski, P Martyniuk, CH Wu, J Jureńczyk, K Grodecki, ...
Infrared Physics & Technology 95, 222-226, 2018
162018
Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Opto-Electronics Review 24 (1), 40-45, 2016
152016
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Optical and Quantum Electronics 48 (9), 428, 2016
142016
Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition
P Martyniuk, D Benyahia, A Kowalewski, Ł Kubiszyn, D Stępień, ...
Solid-State electronics 119, 1-4, 2016
142016
Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Electronic Materials 47 (1), 299-304, 2018
122018
Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
D Benyahia, K Michalczewski, J Boguski, A Kębłowski, P Martyniuk, ...
Nanoscale research letters 13 (1), 196, 2018
102018
Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Semiconductors 39 (3), 033003, 2018
102018
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Crystal Growth 483, 26-30, 2018
92018
Electrical and optical performance of mid-wavelength infrared InAsSb heterostructure detectors
E Gomółka, M Kopytko, K Michalczewski, Ł Kubiszyn, A Kębłowski, ...
Electro-Optical and Infrared Systems: Technology and Applications XIV 10433 …, 2017
72017
Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique.
K Michalczewski, F Ivaldi, Ł Kubiszyn, D Benyahia, J Boguski, ...
Acta Physica Polonica, A. 132 (2), 2017
72017
Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates
K Murawski, E Gomółka, M Kopytko, K Grodecki, K Michalczewski, ...
Progress in Natural Science: Materials International 29 (4), 472-476, 2019
42019
Study on the specific contact resistance of evaporated or electroplated golden contacts to n- and p- type InAs epitaxial layers grown by MBE
J Boguski, K Kolwas, K Michalczewski, J Piotrowski, J Wróbel, K Gorczyca, ...
Materials Science in Semiconductor Processing 81, 60-63, 2018
42018
Electrical and optical performance of midwave infrared InAsSb heterostructure detectors
E Gomółka, M Kopytko, O Markowska, K Michalczewski, Ł Kubiszyn, ...
Optical Engineering 57 (2), 027107, 2018
42018
Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates.
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
Acta Physica Polonica, A. 132 (2), 2017
42017
Demonstration of the very long wavelength infrared type-II superlattice InAs/InAsSb GaAs immersed photodetector operating at thermoelectric cooling
K Michalczewski, P Martyniuk, Ł Kubiszyn, CH Wu, YR Wu, J Jureńczyk, ...
IEEE Electron Device Letters 40 (9), 1396-1398, 2019
32019
p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 16 (5), 695-701, 2016
32016
Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates
D Benyahia, K Michalczewski, A Kębłowski, K Grodecki, P Martyniuk
Journal of Crystal Growth, 2019
22019
High operating temperature LWIR and VLWIR InAs1− xSbx optically immersed photodetectors grown on GaAs substrates
K Michalczewski, D Benyahia, J Jureńczyk, D Stępień, A Kębłowski, ...
Infrared Physics & Technology 97, 116-122, 2019
22019
Heavily Si-doped InAs photoluminescence measurements
K Grodecki, K Murawski, A Henig, K Michalczewski, D Benyahia, ...
Materials Science-Poland 35 (3), 647-650, 2017
22017
nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation
P Martyniuk, W Pusz, W Gawron, D Stępień, S Krishna, A Rogalski
2014 Conference on Optoelectronic and Microelectronic Materials & Devices …, 2014
22014
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