| Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate K Michalczewski, Ł Kubiszyn, P Martyniuk, CH Wu, J Jureńczyk, ... Infrared Physics & Technology 95, 222-226, 2018 | 36 | 2018 |
| Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Optical and Quantum Electronics 48 (9), 428, 2016 | 25 | 2016 |
| Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates K Murawski, E Gomółka, M Kopytko, K Grodecki, K Michalczewski, ... Progress in Natural Science: Materials International 29 (4), 472-476, 2019 | 21 | 2019 |
| Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Journal of Electronic Materials 47 (1), 299-304, 2018 | 21 | 2018 |
| Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition P Martyniuk, D Benyahia, A Kowalewski, Ł Kubiszyn, D Stępień, ... Solid-State electronics 119, 1-4, 2016 | 20 | 2016 |
| Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Opto-Electronics Review 24 (1), 40-45, 2016 | 20 | 2016 |
| Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, J Boguski, A Kębłowski, ... Nanoscale research letters 13 (1), 196, 2018 | 19 | 2018 |
| Demonstration of the very long wavelength infrared type-II superlattice InAs/InAsSb GaAs immersed photodetector operating at thermoelectric cooling K Michalczewski, P Martyniuk, Ł Kubiszyn, CH Wu, YR Wu, J Jureńczyk, ... IEEE Electron Device Letters 40 (9), 1396-1398, 2019 | 17 | 2019 |
| Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Journal of Crystal Growth 483, 26-30, 2018 | 17 | 2018 |
| Ultra-broadband infrared gas sensor for pollution detection: the TRIAGE project B Napier, O Bang, C Markos, P Moselund, L Huot, FJM Harren, ... Journal of Physics: Photonics 3 (3), 031003, 2021 | 13 | 2021 |
| Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Journal of Semiconductors 39 (3), 033003, 2018 | 12 | 2018 |
| The performance of the ICIP Ga-free superlattice longwave infrared photodetector for high operating temperature W Gawron, Ł Kubiszyn, K Michalczewski, T Manyk, J Piotrowski, ... Infrared Physics & Technology 128, 104499, 2023 | 9 | 2023 |
| Demonstration of the longwave type-II superlattice InAs/InAsSb cascade photodetector for high operating temperature W Gawron, Ł Kubiszyn, K Michalczewski, J Piotrowski, P Martyniuk IEEE Electron Device Letters 43 (9), 1487-1490, 2022 | 8 | 2022 |
| Electrical and optical performance of midwave infrared InAsSb heterostructure detectors E Gomółka, M Kopytko, O Markowska, K Michalczewski, Ł Kubiszyn, ... Optical Engineering 57 (2), 027107-027107, 2018 | 8 | 2018 |
| Electrical and optical performance of mid-wavelength infrared InAsSb heterostructure detectors E Gomółka, M Kopytko, K Michalczewski, Ł Kubiszyn, A Kębłowski, ... Electro-Optical and Infrared Systems: Technology and Applications XIV 10433 …, 2017 | 8 | 2017 |
| Studies of dark current reduction in InAsSb mid-wave infrared HOT detectors through Two step passivation technique K Michalczewski, F Ivaldi, Ł Kubiszyn, D Benyahia, J Boguski, ... Acta Physica Polonica A 132 (2), 325-328, 2017 | 8 | 2017 |
| Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate J Wróbel, K Grodecki, D Benyahia, K Murawski, K Michalczewski, ... 13th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2018 | 7 | 2018 |
| Study on the specific contact resistance of evaporated or electroplated golden contacts to n-and p-type InAs epitaxial layers grown by MBE J Boguski, K Kolwas, Ł Kubiszyn, K Michalczewski, J Piotrowski, J Wróbel, ... Materials Science in Semiconductor Processing 81, 60-63, 2018 | 6 | 2018 |
| p-type doping of GaSb by beryllium grown on GaAs (001) substrate by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Journal of Semiconductor Technology and Science 16 (5), 695-701, 2016 | 6 | 2016 |
| Molecular beam epitaxy growth and characterization of interband cascade infrared detectors on GaAs substrates Ł Kubiszyn, D Benyahia, K Michalczewski, K Hackiewicz, A Kębłowski, ... Journal of Crystal Growth 534, 125512, 2020 | 5 | 2020 |
Benyahia DjalalHab. PhDZweryfikowany adres z wat.edu.pl
